Infineon Technologies IPD90P03P4L-04

Name: IPD90P03P4L-04
Brand: Infineon Technologies
SKU: 2478696-IPD90P03P4L-04
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPD90P03P4L-04

Manufacturer:: Infineon Technologies

Ventron No:: 2478696-IPD90P03P4L-04

Description:: MOSFET P-CH 30V 90A TO252-3

ECAD Model:

Datasheet:: IPD90P03P4L-04

Specifications

Infineon Technologies IPD90P03P4L-04 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPD90P03P4L-04.

Package / Case
PG-TO252-3
Packaging
Tape & Reel (TR)
FET Type
P Channel
Rds On (Max) @ Id, Vgs
4.1mΩ @ 90A,10V
Vgs(th) (Max) @ Id
2V @ 253uA
Drain to Source Voltage (Vdss)
-30V
Continuous Drain Current (Id) @ 25°C
90A Tc
Power Dissipation-Max (Ta=25°C)
137W Tc
RoHS Status
RoHS Compliant

Description

IPD90P03P4L-04 Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IPD90P03P4L-04 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IPD90P03P4L-04. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

IPD90P03P4L-04 More Descriptions

Trans MOSFET P-CH 30V 90A Automotive 3-Pin(2 Tab) DPAK T/R
MOSFET P-Ch -30V -90A DPAK-2 OptiMOS-P2
IPD90P03P4L-04 Infineon Technologies

Product Comparison

The three parts on the right have similar specifications to IPD90P03P4L-04.

Image

Part Number

Manufacturer

Package / Case

Packaging

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Drain to Source Voltage (Vdss)

Continuous Drain Current (Id) @ 25°C

Power Dissipation-Max (Ta=25°C)

RoHS Status

Factory Lead Time

Mount

Mounting Type

Number of Pins

Transistor Element Material

Operating Temperature

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

Turn On Delay Time

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Drain-source On Resistance-Max

Avalanche Energy Rating (Eas)

Lead Free

Reference Standard

Fall Time (Typ)

Surface Mount

Additional Feature

Drain Current-Max (Abs) (ID)

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

View Compare
IPD90P03P4L-04

Infineon Technologies

PG-TO252-3

Tape & Reel (TR)

P Channel

4.1mΩ @ 90A,10V

2V @ 253uA

-30V

90A Tc

137W Tc

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IPD90N04S402ATMA1

Infineon Technologies

TO-252-3, DPak (2 Leads Tab), SC-63

Tape & Reel (TR)

N-Channel

2.4m Ω @ 90A, 10V

4V @ 95μA

-

-

-

ROHS3 Compliant

16 Weeks

Surface Mount

Surface Mount

3

SILICON

-55°C~175°C TJ

Automotive, AEC-Q101, OptiMOS™

2010

e3

Active

1 (Unlimited)

2

EAR99

Tin (Sn)

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

not_compliant

NOT SPECIFIED

R-PSSO-G2

1

SINGLE WITH BUILT-IN DIODE

150W Tc

ENHANCEMENT MODE

DRAIN

23 ns

Halogen Free

9430pF @ 25V

90A Tc

118nC @ 10V

10ns

10V

±20V

27 ns

90A

20V

40V

0.0024Ohm

475 mJ

Contains Lead

-

-

-

-

-

-

-

IPD90P03P4L-04 vs IPD90N04S402ATMA1
IPD90N04S3H4ATMA1

Infineon Technologies

TO-252-3, DPak (2 Leads Tab), SC-63

Tape & Reel (TR)

N-Channel

4.3m Ω @ 90A, 10V

4V @ 65μA

-

-

-

ROHS3 Compliant

-

Surface Mount

Surface Mount

3

SILICON

-55°C~175°C TJ

OptiMOS™

2008

e3

Not For New Designs

1 (Unlimited)

2

EAR99

Tin (Sn)

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

not_compliant

NOT SPECIFIED

R-PSSO-G2

1

SINGLE WITH BUILT-IN DIODE

115W Tc

ENHANCEMENT MODE

DRAIN

20 ns

Halogen Free

3900pF @ 25V

90A Tc

60nC @ 10V

13ns

10V

±20V

30 ns

90A

20V

40V

-

-

Contains Lead

AEC-Q101

10 ns

-

-

-

-

-

IPD90P03P4L-04 vs IPD90N04S3H4ATMA1
IPD90N06S4L06ATMA1

Infineon Technologies

TO-252-3, DPak (2 Leads Tab), SC-63

Tape & Reel (TR)

N-Channel

6.3m Ω @ 90A, 10V

2.2V @ 40μA

60V

-

-

ROHS3 Compliant

-

-

Surface Mount

-

SILICON

-55°C~175°C TJ

OptiMOS™

2009

-

Discontinued

1 (Unlimited)

2

EAR99

-

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

-

NOT SPECIFIED

R-PSSO-G2

1

SINGLE WITH BUILT-IN DIODE

79W Tc

ENHANCEMENT MODE

DRAIN

-

-

5680pF @ 25V

90A Tc

75nC @ 10V

-

4.5V 10V

±16V

-

-

-

-

0.0063Ohm

67 mJ

-

AEC-Q101

-

YES

ULTRA-LOW RESISTANCE

90A

360A

60V

IPD90P03P4L-04 vs IPD90N06S4L06ATMA1