Infineon Technologies IPD65R380E6BTMA1

Name: IPD65R380E6BTMA1
Brand: Infineon Technologies
SKU: 2489008-IPD65R380E6BTMA1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPD65R380E6BTMA1

Manufacturer:: Infineon Technologies

Ventron No:: 2489008-IPD65R380E6BTMA1

Description:: MOSFET N-CH 650V 10.6A TO252

ECAD Model:

Datasheet:: IPD65R380E6BTMA1

Specifications

Infineon Technologies IPD65R380E6BTMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPD65R380E6BTMA1.

Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
CoolMOS™
Published
2008
JESD-609 Code
e3
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
Tin (Sn)
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
4
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
83W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
380m Ω @ 3.2A, 10V
Vgs(th) (Max) @ Id
3.5V @ 320μA
Input Capacitance (Ciss) (Max) @ Vds
710pF @ 100V
Current - Continuous Drain (Id) @ 25°C
10.6A Tc
Gate Charge (Qg) (Max) @ Vgs
39nC @ 10V
Drain to Source Voltage (Vdss)
650V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
JEDEC-95 Code
TO-252AA
Drain-source On Resistance-Max
0.38Ohm
Pulsed Drain Current-Max (IDM)
29A
DS Breakdown Voltage-Min
650V
Avalanche Energy Rating (Eas)
215 mJ
RoHS Status
RoHS Compliant

Description

IPD65R380E6BTMA1 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 215 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 710pF @ 100V maximal input capacitance.As far as peak drain current is concerned, its maximum pulsed current is 29A.The DS breakdown voltage should be maintained above 650V to maintain normal operation.To operate this transistor, you will need a 650V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IPD65R380E6BTMA1 Features
the avalanche energy rating (Eas) is 215 mJ
based on its rated peak drain current 29A.
a 650V drain to source voltage (Vdss)

IPD65R380E6BTMA1 Applications
There are a lot of Infineon Technologies
IPD65R380E6BTMA1 applications of single MOSFETs transistors.

Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies

IPD65R380E6BTMA1 More Descriptions

Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 2200pF 50volts X7R 5%
CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHSInfineon SCT
CoolMOS E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Very high commutation ruggedness; Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss); Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

Product Comparison

The three parts on the right have similar specifications to IPD65R380E6BTMA1.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

JEDEC-95 Code

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

ECCN Code

Drain Current-Max (Abs) (ID)

Vgs(th) (Max) @ Id:

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

Additional Feature

View Compare
IPD65R380E6BTMA1

Infineon Technologies

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

CoolMOS™

2008

e3

no

Obsolete

1 (Unlimited)

2

Tin (Sn)

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

not_compliant

NOT SPECIFIED

4

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

83W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

380m Ω @ 3.2A, 10V

3.5V @ 320μA

710pF @ 100V

10.6A Tc

39nC @ 10V

650V

10V

±20V

TO-252AA

0.38Ohm

29A

650V

215 mJ

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IPD600N25N3GBTMA1

Infineon Technologies

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2011

e3

yes

Obsolete

1 (Unlimited)

2

MATTE TIN

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

compliant

NOT SPECIFIED

4

R-PSSO-G2

-

1

SINGLE WITH BUILT-IN DIODE

136W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

60m Ω @ 25A, 10V

4V @ 90μA

2350pF @ 100V

25A Tc

29nC @ 10V

250V

10V

±20V

TO-252AA

0.06Ohm

100A

250V

210 mJ

RoHS Compliant

EAR99

25A

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IPD65R380E6BTMA1 vs IPD600N25N3GBTMA1
IPD60R520C6

Infineon Technologies

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

3.5V @ 230µA

MOSFET (Metal Oxide)

PG-TO252-3

CoolMOS™

520 mOhm @ 2.8A, 10V

66W (Tc)

Tape & Reel (TR)

TO-252-3, DPak (2 Leads Tab), SC-63

-55°C ~ 150°C (TJ)

Surface Mount

512pF @ 100V

23.4nC @ 10V

N-Channel

-

600V

8.1A (Tc)

-

IPD65R380E6BTMA1 vs IPD60R520C6
IPD640N06LGBTMA1

Infineon Technologies

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2008

e3

no

Discontinued

1 (Unlimited)

2

Tin (Sn)

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

not_compliant

NOT SPECIFIED

4

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

47W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

64m Ω @ 18A, 10V

2V @ 16μA

470pF @ 30V

18A Tc

13nC @ 10V

60V

4.5V 10V

±20V

TO-252AA

0.064Ohm

72A

60V

43 mJ

ROHS3 Compliant

EAR99

18A

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

IPD65R380E6BTMA1 vs IPD640N06LGBTMA1

Certification

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IPD65R380E6BTMA1 Specification

Part Number	Manufacturers	Description	Stock	Price
IPD65R380E6ATMA1 DISTI #V72:2272_06383591	Infineon Technologies AG	Trans MOSFET N-CH 700V 10.6A 3-Pin(2 Tab) DPAK T/R	0
IPD65R380E6ATMA1 DISTI #V36:1790_06383591	Infineon Technologies AG	Trans MOSFET N-CH 700V 10.6A 3-Pin(2 Tab) DPAK T/R	0
IPD65R380E6ATMA1 DISTI #IPD65R380E6ATMA1-ND	Infineon Technologies AG	MOSFET N-CH 650V 10.6A TO252 RoHS: Compliant	0	2500 $0.85848
IPD65R380E6BTMA1 DISTI #IPD65R380E6BTMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 650V 10.6A TO252 RoHS: Compliant	0
IPD65R380E6BTMA1 DISTI #IPD65R380E6BTMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 650V 10.6A TO252 RoHS: Compliant	0
IPD65R380E6BTMA1 DISTI #IPD65R380E6BTMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 650V 10.6A TO252 RoHS: Compliant	0
IPD65R380E6 DISTI #30600849	Infineon Technologies AG	Trans MOSFET N-CH 700V 10.6A 3-Pin(2 Tab) TO-252 RoHS: Compliant	250	100 $0.6311
IPD65R380E6ATMA1 DISTI #SP001117736	Infineon Technologies AG	Trans MOSFET N-CH 700V 10.6A 3-Pin TO-252 T/R (Alt RoHS: Compliant	1200	2500 $1.2659 5000 $0.9879 10000 $0.8829 15000 $0.8029 25000 $0.7529
IPD65R380E6 DISTI #IPD65R380E6	Infineon Technologies AG	Trans MOSFET N-CH 700V 10.6A 3-Pin TO-252 T/R - Bu RoHS: Not Compliant	0	472 $1.0659 474 $1.0269 946 $0.9899 2360 $0.9569 4720 $0.9399
IPD65R380E6ATMA1 DISTI #IPD65R380E6ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 700V 10.6A 3-Pin TO-252 T/R - Bu	0
IPD65R380E6ATMA1 DISTI #IPD65R380E6ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 700V 10.6A 3-Pin TO-252 T/R - Ta RoHS: Compliant	0	2500 $0.8329 5000 $0.8019 10000 $0.7729 15000 $0.7469 25000 $0.7339
IPD65R380E6ATMA1 DISTI #726-IPD65R380E6ATMA1	Infineon Technologies AG	MOSFET LOW POWER_LEGACY RoHS: Compliant	0	1 $1.7 10 $1.44 100 $1.15 500 $1.01 1000 $0.839 2500 $0.781
IPD65R380E6 DISTI #726-IPD65R380E6	Infineon Technologies AG	MOSFET N-Ch 700V 10.6A DPAK-2 CoolMOS E6 RoHS: Compliant	941	1 $1.68 10 $1.43 100 $1.15 500 $0.99 1000 $0.828
IPD65R380E6BTMA1 DISTI #N/A	Infineon Technologies AG	MOSFET LOW POWER_LEGACY	0
IPD65R380E6 DISTI #	Infineon Technologies AG	Power Field-Effect Transistor, 650V, 0.38ohm, 1-El RoHS: Compliant	10600	1 $0.86 25 $0.8 100 $0.76 500 $0.73 1000 $0.7
IPD65R380E6ATMA1 DISTI #2726056	Infineon Technologies AG	MOSFET, N-CH, 650V, 10.6A, TO-252-3 RoHS: Compliant	588	1 $2.78 10 $2.42 100 $1.98
IPD65R380E6ATMA1 DISTI #2726056	Infineon Technologies AG	MOSFET, N-CH, 650V, 10.6A, TO-252-3 RoHS: Compliant	797	5 $1.5 25 $1.38 100 $1.09

IPD65R3~~(6)~~
IPD65R~~(35)~~
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IPD~~(434)~~

Infineon Technologies IPD65R380E6BTMA1

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