Infineon Technologies IPD65R380E6ATMA1
- Part Number:
- IPD65R380E6ATMA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2488984-IPD65R380E6ATMA1
- Description:
- MOSFET N-CH 650V 10.6A TO252
- ECAD Model:
-
- Datasheet:
- IPD65R380E6ATMA1
Infineon Technologies IPD65R380E6ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPD65R380E6ATMA1.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesCoolMOS™ E6
- Published2008
- JESD-609 Codee3
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- HTS Code8541.29.00.95
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max83W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Turn On Delay Time10 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs380m Ω @ 3.2A, 10V
- Vgs(th) (Max) @ Id3.5V @ 320μA
- Input Capacitance (Ciss) (Max) @ Vds710pF @ 100V
- Current - Continuous Drain (Id) @ 25°C10.6A Tc
- Gate Charge (Qg) (Max) @ Vgs39nC @ 10V
- Rise Time7ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)8 ns
- Turn-Off Delay Time57 ns
- Continuous Drain Current (ID)10.6A
- JEDEC-95 CodeTO-252AA
- Gate to Source Voltage (Vgs)20V
- Max Dual Supply Voltage650V
- Pulsed Drain Current-Max (IDM)29A
- Avalanche Energy Rating (Eas)215 mJ
- RoHS StatusROHS3 Compliant
IPD65R380E6ATMA1 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 215 mJ.The maximum input capacitance of this device is 710pF @ 100V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 10.6A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 57 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 29A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 10 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 650V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (10V), this device helps reduce its power consumption.
IPD65R380E6ATMA1 Features
the avalanche energy rating (Eas) is 215 mJ
a continuous drain current (ID) of 10.6A
the turn-off delay time is 57 ns
based on its rated peak drain current 29A.
IPD65R380E6ATMA1 Applications
There are a lot of Infineon Technologies
IPD65R380E6ATMA1 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 215 mJ.The maximum input capacitance of this device is 710pF @ 100V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 10.6A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 57 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 29A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 10 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 650V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (10V), this device helps reduce its power consumption.
IPD65R380E6ATMA1 Features
the avalanche energy rating (Eas) is 215 mJ
a continuous drain current (ID) of 10.6A
the turn-off delay time is 57 ns
based on its rated peak drain current 29A.
IPD65R380E6ATMA1 Applications
There are a lot of Infineon Technologies
IPD65R380E6ATMA1 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
IPD65R380E6ATMA1 More Descriptions
Trans MOSFET N-CH 700V 10.6A Automotive 3-Pin(2 Tab) DPAK T/R
MOSFET, N-CH, 650V, 10.6A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 10.6A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.34ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 83W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS E6 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Power Field-Effect Transistor, 10.6A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHSInfineon SCT
CoolMOS E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Very high commutation ruggedness; Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss); Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
MOSFET, N-CH, 650V, 10.6A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 10.6A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.34ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 83W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS E6 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Power Field-Effect Transistor, 10.6A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHSInfineon SCT
CoolMOS E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Very high commutation ruggedness; Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss); Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
The three parts on the right have similar specifications to IPD65R380E6ATMA1.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Max Dual Supply VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)RoHS StatusSurface MountPbfree CodePin CountDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinSupplier Device PackageMax Operating TemperatureMin Operating TemperaturePower DissipationInput CapacitanceRds On MaxLead FreeQualification StatusElement ConfigurationHalogen FreeDrain to Source Breakdown VoltageHeightLengthWidthView Compare
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IPD65R380E6ATMA112 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-55°C~150°C TJTape & Reel (TR)CoolMOS™ E62008e3Not For New Designs1 (Unlimited)2EAR99Tin (Sn)8541.29.00.95MOSFET (Metal Oxide)SINGLEGULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PSSO-G21SINGLE WITH BUILT-IN DIODE83W TcENHANCEMENT MODEDRAIN10 nsN-ChannelSWITCHING380m Ω @ 3.2A, 10V3.5V @ 320μA710pF @ 100V10.6A Tc39nC @ 10V7ns10V±20V8 ns57 ns10.6ATO-252AA20V650V29A215 mJROHS3 Compliant---------------------- -
--Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-SILICON-55°C~175°C TJTape & Reel (TR)OptiMOS™2011e3Obsolete1 (Unlimited)2EAR99MATTE TIN-MOSFET (Metal Oxide)SINGLEGULL WINGNOT SPECIFIEDcompliantNOT SPECIFIEDR-PSSO-G21SINGLE WITH BUILT-IN DIODE136W TcENHANCEMENT MODEDRAIN-N-ChannelSWITCHING60m Ω @ 25A, 10V4V @ 90μA2350pF @ 100V25A Tc29nC @ 10V-10V±20V---TO-252AA--100A210 mJRoHS CompliantYESyes4250V25A0.06Ohm250V--------------
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18 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633--55°C~150°C TJTape & Reel (TR)CoolMOS™2008-Active1 (Unlimited)----MOSFET (Metal Oxide)------1-83.3W Tc--10 nsN-Channel-420mOhm @ 3.4A, 10V4.5V @ 300μA870pF @ 100V8.7A Tc31.5nC @ 10V7ns10V±20V8 ns38 ns8.7A-20V650V--ROHS3 Compliant---650V---PG-TO252-3150°C-55°C83.3W870pF420 mΩLead Free-------
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12 Weeks-Surface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-55°C~150°C TJTape & Reel (TR)CoolMOS™ E62008e3Not For New Designs1 (Unlimited)2-Tin (Sn)-MOSFET (Metal Oxide)-GULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PSSO-G21-63W TcENHANCEMENT MODEDRAIN10 nsN-ChannelSWITCHING600m Ω @ 2.1A, 10V3.5V @ 210μA440pF @ 100V7.3A Tc23nC @ 10V8ns10V±20V11 ns64 ns7.3A-20V-18A142 mJROHS3 CompliantYESno4650V-0.6Ohm----63W---Not QualifiedSingleHalogen Free700V2.41mm6.73mm6.22mm
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