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Infineon Technologies IPD60R800CEAUMA1
- Part Number:
- IPD60R800CEAUMA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2487359-IPD60R800CEAUMA1
- Description:
- CONSUMER
- ECAD Model:
-
- Datasheet:
- IPD60R800CE, IPA60R800CE
Infineon Technologies IPD60R800CEAUMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPD60R800CEAUMA1.
- Factory Lead Time18 Weeks
- MountSurface Mount
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-40°C
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Reach Compliance Codenot_compliant
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Transistor ApplicationSWITCHING
- Halogen FreeHalogen Free
- Drain to Source Voltage (Vdss)600V
- Polarity/Channel TypeN-CHANNEL
- JEDEC-95 CodeTO-252
- Max Dual Supply Voltage600V
- Pulsed Drain Current-Max (IDM)15.7A
- Avalanche Energy Rating (Eas)72 mJ
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Drain to Source Resistance680mOhm
- RoHS StatusROHS3 Compliant
- Lead FreeContains Lead
IPD60R800CEAUMA1 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 72 mJ.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 15.7A. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 680mOhm. Powered by 600V, it supports the maximal dual supply voltage.Operating this transistor requires a 600V drain to source voltage (Vdss).
IPD60R800CEAUMA1 Features
the avalanche energy rating (Eas) is 72 mJ
based on its rated peak drain current 15.7A.
single MOSFETs transistor is 680mOhm
a 600V drain to source voltage (Vdss)
IPD60R800CEAUMA1 Applications
There are a lot of Infineon Technologies
IPD60R800CEAUMA1 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 72 mJ.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 15.7A. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 680mOhm. Powered by 600V, it supports the maximal dual supply voltage.Operating this transistor requires a 600V drain to source voltage (Vdss).
IPD60R800CEAUMA1 Features
the avalanche energy rating (Eas) is 72 mJ
based on its rated peak drain current 15.7A.
single MOSFETs transistor is 680mOhm
a 600V drain to source voltage (Vdss)
IPD60R800CEAUMA1 Applications
There are a lot of Infineon Technologies
IPD60R800CEAUMA1 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
IPD60R800CEAUMA1 More Descriptions
Single N-Channel 600 V 800 mOhm 17.2 nC CoolMOS Power Mosfet - DPAK, PG-TO252-3, RoHSInfineon SCT
Mosfet, N-Ch, 600V, 8.4A, To-252; Transistor Polarity:N Channel; Continuous Drain Current Id:8.4A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.68Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Infineon IPD60R800CEAUMA1
Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
Mosfet, N-Ch, 600V, 8.4A, To-252; Transistor Polarity:N Channel; Continuous Drain Current Id:8.4A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.68Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Infineon IPD60R800CEAUMA1
Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
The three parts on the right have similar specifications to IPD60R800CEAUMA1.
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ImagePart NumberManufacturerFactory Lead TimeMountPackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureTerminal PositionTerminal FormReach Compliance CodeJESD-30 CodeNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationHalogen FreeDrain to Source Voltage (Vdss)Polarity/Channel TypeJEDEC-95 CodeMax Dual Supply VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)FET TechnologyDrain to Source ResistanceRoHS StatusLead FreeMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperatureSeriesTechnologyPower Dissipation-MaxPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Input CapacitanceRds On MaxTransistor Element MaterialPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Drain-source On Resistance-MaxFET FeatureView Compare
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IPD60R800CEAUMA118 WeeksSurface MountTape & Reel (TR)2008e3yesActive3 (168 Hours)2EAR99Tin (Sn)150°C-40°CSINGLEGULL WINGnot_compliantR-PSSO-G21SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHINGHalogen Free600VN-CHANNELTO-252600V15.7A72 mJMETAL-OXIDE SEMICONDUCTOR680mOhmROHS3 CompliantContains Lead------------------------------- -
18 WeeksSurface MountTape & Reel (TR)2008--Active1 (Unlimited)---150°C-55°C----1-----650V--650V----ROHS3 CompliantLead FreeSurface MountTO-252-3, DPak (2 Leads Tab), SC-633PG-TO252-3-55°C~150°C TJCoolMOS™MOSFET (Metal Oxide)83.3W Tc83.3W10 nsN-Channel420mOhm @ 3.4A, 10V4.5V @ 300μA870pF @ 100V8.7A Tc31.5nC @ 10V7ns10V±20V8 ns38 ns8.7A20V870pF420 mΩ-----
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6 WeeksSurface MountTape & Reel (TR)2013-yesActive1 (Unlimited)2EAR99---SINGLEGULL WING-R-PSSO-G21SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHINGHalogen Free---650V12A50 mJ--ROHS3 CompliantContains LeadSurface MountTO-252-3, DPak (2 Leads Tab), SC-63---55°C~150°C TJCoolMOS™MOSFET (Metal Oxide)68W Tc--N-Channel1 Ω @ 1.5A, 10V3.5V @ 200μA328pF @ 100V7.2A Tc15.3nC @ 10V-10V±20V--7.2A---SILICONNOT SPECIFIEDNOT SPECIFIED1OhmSuper Junction
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14 WeeksSurface MountTape & Reel (TR)2013e3yesActive1 (Unlimited)2EAR99Tin (Sn)--SINGLEGULL WINGnot_compliantR-PSSO-G21SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAIN-Halogen Free---100V240A120 mJ--ROHS3 CompliantContains LeadSurface MountTO-252-3, DPak (2 Leads Tab), SC-633--55°C~175°C TJAutomotive, AEC-Q101, OptiMOS™MOSFET (Metal Oxide)94W Tc-6 nsN-Channel12.2m Ω @ 60A, 10V3.5V @ 46μA2470pF @ 25V60A Tc34nC @ 10V3ns10V±20V13 ns9 ns60A20V--SILICONNOT SPECIFIEDNOT SPECIFIED0.0122Ohm-
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