Infineon Technologies IPD60R3K3C6

Name: IPD60R3K3C6
Brand: Infineon Technologies
SKU: 2493522-IPD60R3K3C6
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPD60R3K3C6

Manufacturer:: Infineon Technologies

Ventron No:: 2493522-IPD60R3K3C6

Description:: MOSFET N-CH 600V 1.7A TO252-3

ECAD Model:

Datasheet:: IPD60R3K3C6

Specifications

Infineon Technologies IPD60R3K3C6 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPD60R3K3C6.

Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
CoolMOS™
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
4
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
18.1W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
3.3 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id
3.5V @ 40μA
Input Capacitance (Ciss) (Max) @ Vds
93pF @ 100V
Current - Continuous Drain (Id) @ 25°C
1.7A Tc
Gate Charge (Qg) (Max) @ Vgs
4.6nC @ 10V
Drain to Source Voltage (Vdss)
600V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
1.7A
Pulsed Drain Current-Max (IDM)
4A
DS Breakdown Voltage-Min
600V
Avalanche Energy Rating (Eas)
6 mJ
RoHS Status
RoHS Compliant

Description

IPD60R3K3C6 Description
IPD60R3K3C6 is a type of CoolMOS? C6 power transistor provided by Infineon Technologies based on the revolutionary CoolMOS? technology mainly developed for high-voltage power MOSFETs. In addition to the benefits of a fast switching SJ MOSFET, it is also able to provide excellent ease of use. IPD60R3K3C6 makes low switching and conduction losses possible in switching applications.

IPD60R3K3C6 Features
Ease of use/drive
Low switching and conduction losses
Revolutionary CoolMOS? technology
Outstanding commutation ruggedness
Available in the PG-TO252 package

IPD60R3K3C6 Applications
Adapter
Server
Lighting
PC silverbox
LCD & PDP TV
Telecom and UPS

Product Comparison

The three parts on the right have similar specifications to IPD60R3K3C6.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

ECCN Code

JEDEC-95 Code

Drain-source On Resistance-Max

Vgs(th) (Max) @ Id:

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

View Compare
IPD60R3K3C6

Infineon Technologies

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

CoolMOS™

2008

e3

yes

Obsolete

1 (Unlimited)

2

Matte Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

not_compliant

NOT SPECIFIED

4

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

18.1W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

3.3 Ω @ 500mA, 10V

3.5V @ 40μA

93pF @ 100V

1.7A Tc

4.6nC @ 10V

600V

10V

±20V

1.7A

4A

600V

6 mJ

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IPD600N25N3GBTMA1

Infineon Technologies

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2011

e3

yes

Obsolete

1 (Unlimited)

2

MATTE TIN

-

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

compliant

NOT SPECIFIED

4

R-PSSO-G2

-

1

SINGLE WITH BUILT-IN DIODE

136W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

60m Ω @ 25A, 10V

4V @ 90μA

2350pF @ 100V

25A Tc

29nC @ 10V

250V

10V

±20V

25A

100A

250V

210 mJ

RoHS Compliant

EAR99

TO-252AA

0.06Ohm

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IPD60R3K3C6 vs IPD600N25N3GBTMA1
IPD60R950C6

Infineon Technologies

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~150°C TJ

Cut Tape (CT)

CoolMOS™

2008

e3

yes

Discontinued

1 (Unlimited)

2

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

-

NOT SPECIFIED

4

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

37W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

950m Ω @ 1.5A, 10V

3.5V @ 130μA

280pF @ 100V

4.4A Tc

13nC @ 10V

600V

10V

±20V

4.4A

12A

600V

46 mJ

ROHS3 Compliant

-

-

0.95Ohm

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IPD60R3K3C6 vs IPD60R950C6
IPD60R520C6

Infineon Technologies

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

3.5V @ 230µA

MOSFET (Metal Oxide)

PG-TO252-3

CoolMOS™

520 mOhm @ 2.8A, 10V

66W (Tc)

Tape & Reel (TR)

TO-252-3, DPak (2 Leads Tab), SC-63

-55°C ~ 150°C (TJ)

Surface Mount

512pF @ 100V

23.4nC @ 10V

N-Channel

-

600V

8.1A (Tc)

IPD60R3K3C6 vs IPD60R520C6

Certification

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IPD60R3K3C6 Specification

Part Number	Manufacturers	Description	Stock	Price
IPD60R3K3C6ATMA1 DISTI #V72:2272_06391031	Infineon Technologies AG	Trans MOSFET N-CH 650V 1.7A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	2500	1 $0.2721 10 $0.2449 25 $0.2413 100 $0.2162 250 $0.2129 500 $0.2097 1000 $0.2064
IPD60R3K3C6ATMA1 DISTI #V36:1790_06391031	Infineon Technologies AG	Trans MOSFET N-CH 650V 1.7A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	0	2500 $0.2365
IPD60R3K3C6ATMA1 DISTI #IPD60R3K3C6ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 600V 1.7A TO252-3 RoHS: Compliant	2500	2500 $0.25761 5000 $0.23984 12500 $0.23096 25000 $0.22504
IPD60R3K3C6ATMA1 DISTI #IPD60R3K3C6ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 600V 1.7A TO252-3 RoHS: Compliant	2500	1 $0.69 10 $0.604 100 $0.463 500 $0.36598 1000 $0.29279
IPD60R3K3C6ATMA1 DISTI #IPD60R3K3C6ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 600V 1.7A TO252-3 RoHS: Compliant	2500	1 $0.69 10 $0.604 100 $0.463 500 $0.36598 1000 $0.29279
IPD60R3K3C6 DISTI #IPD60R3K3C6TR-ND	Infineon Technologies AG	MOSFET N-CH 600V 1.7A TO252-3 RoHS: Compliant	0
IPD60R3K3C6 DISTI #IPD60R3K3C6CT-ND	Infineon Technologies AG	MOSFET N-CH 600V 1.7A TO252-3 RoHS: Compliant	0
IPD60R3K3C6 DISTI #IPD60R3K3C6DKR-ND	Infineon Technologies AG	MOSFET N-CH 600V 1.7A TO252-3 RoHS: Compliant	0
IPD60R3K3C6ATMA1 DISTI #33644566	Infineon Technologies AG	Trans MOSFET N-CH 650V 1.7A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	7500	2500 $0.2118
IPD60R3K3C6ATMA1 DISTI #31627991	Infineon Technologies AG	Trans MOSFET N-CH 650V 1.7A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	2500	30 $0.2721
IPD60R3K3C6 DISTI #30580666	Infineon Technologies AG	Trans MOSFET N-CH 650V 1.7A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	655	111 $0.2262
IPD60R3K3C6ATMA1 DISTI #SP001117718	Infineon Technologies AG	Trans MOSFET N-CH 650V 1.7A 3-Pin TO-252 T/R (Alt: RoHS: Compliant	7500	2500 $0.3699 5000 $0.3139 10000 $0.2799 15000 $0.2519 25000 $0.2339
IPD60R3K3C6ATMA1 DISTI #IPD60R3K3C6ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 650V 1.7A 3-Pin TO-252 T/R - Tap RoHS: Compliant	0	2500 $0.2438 5000 $0.235 10000 $0.22651 15000 $0.21889 25000 $0.21499
IPD60R3K3C6ATMA1 DISTI #13AC9045	Infineon Technologies AG	Trans MOSFET N-CH 650V 1.7A 3-Pin TO-252 T/R - Pro RoHS: Compliant	0
IPD60R3K3C6ATMA1 DISTI #13AC9045	Infineon Technologies AG	MOSFET, N-CH, 600V, 1.7A, TO-252-3, Transistor Po	3765	1 $0.275 10 $0.275 25 $0.275 50 $0.275 100 $0.252 250 $0.252 500 $0.233 1000 $0.233
IPD60R3K3C6ATMA1. DISTI #27AC6732	Infineon Technologies AG	LOW POWER_LEGACY ROHS COMPLIANT: YES	0	1 $0.244 5000 $0.235 10000 $0.227 15000 $0.219 25000 $0.215
IPD60R3K3C6ATMA1 DISTI #726-IPD60R3K3C6ATMA1	Infineon Technologies AG	MOSFET N-Ch 650V 1.7A DPAK-2	0	1 $0.63 10 $0.525 100 $0.339 1000 $0.271
IPD60R3K3C6 DISTI #726-IPD60R3K3C6	Infineon Technologies AG	MOSFET N-Ch 650V 1.7A DPAK-2 CoolMOS C6 RoHS: Compliant	0
IPD60R3K3C6BTMA1 DISTI #726-IPD60R3K3C6BTMA1	Infineon Technologies AG	MOSFET N-Ch 650V 1.7A DPAK-2 CoolMOS C6 RoHS: Compliant	0
IPD60R3K3C6ATMA1 DISTI #2726052	Infineon Technologies AG	MOSFET, N-CH, 600V, 1.7A, TO-252-3 RoHS: Compliant	5789	1 $1.04 10 $0.91 100 $0.698 500 $0.552 1000 $0.442
IPD60R3K3C6ATMA1 DISTI #2726052	Infineon Technologies AG	MOSFET, N-CH, 600V, 1.7A, TO-252-3	5819	1 $0.696 10 $0.561 100 $0.327
IPD60R3K3C6 DISTI #TMOSP12915	Infineon Technologies AG	N-CH 600V 2A 3300mOhm TO252-3 RoHS: Compliant	0	2500 $0.3184 5000 $0.3002 7500 $0.282 10000 $0.2456

IPD60R3~~(15)~~
IPD60R~~(53)~~
IPD60~~(54)~~
IPD6~~(51)~~
IPD~~(434)~~

Infineon Technologies IPD60R3K3C6

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