Infineon Technologies IPD60R380P6ATMA1

Name: IPD60R380P6ATMA1
Brand: Infineon Technologies
SKU: 2486050-IPD60R380P6ATMA1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPD60R380P6ATMA1

Manufacturer:: Infineon Technologies

Ventron No:: 2486050-IPD60R380P6ATMA1

Description:: MOSFET N-CH 600V DPAK-3

ECAD Model:

Datasheet:: IPD60R380P6ATMA1

Specifications

Infineon Technologies IPD60R380P6ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPD60R380P6ATMA1.

Factory Lead Time
18 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Supplier Device Package
PG-TO252-3
Weight
3.949996g
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
CoolMOS™ P6
Published
2008
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Technology
MOSFET (Metal Oxide)
Number of Channels
1
Power Dissipation-Max
83W Tc
Turn On Delay Time
12 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
380mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id
4.5V @ 320μA
Input Capacitance (Ciss) (Max) @ Vds
877pF @ 100V
Current - Continuous Drain (Id) @ 25°C
10.6A Tc
Gate Charge (Qg) (Max) @ Vgs
19nC @ 10V
Rise Time
6ns
Drain to Source Voltage (Vdss)
600V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
7 ns
Turn-Off Delay Time
33 ns
Continuous Drain Current (ID)
10.6A
Gate to Source Voltage (Vgs)
20V
Max Dual Supply Voltage
600V
Drain to Source Breakdown Voltage
600V
Input Capacitance
877pF
Drain to Source Resistance
342mOhm
Rds On Max
380 mΩ
RoHS Status
ROHS3 Compliant

Description

IPD60R380P6ATMA1 Description
IPD60R380P6ATMA1 is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a drain to source voltage of 600V. The operating temperature of the IPD60R380P6ATMA1 is -55°C~150°C TJ and its maximum power dissipation is 83W Tc. IPD60R380P6ATMA1 has 3 pins and it is available in Tape & Reel (TR) packaging way. The Turn On Delay Time of IPD60R380P6ATMA1 is 12 ns and its Turn-Off Delay Time is 33 ns.

IPD60R380P6ATMA1 Features
Increased MOSFET dv/dt ruggedness
Extremely low losses due to very low FOM Rdson*Qg and Ross
Very high commutation ruggedness
Easy to use/drive
Pb-free plating, Halogen-free mold compound

IPD60R380P6ATMA1 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial

IPD60R380P6ATMA1 More Descriptions

MOSFET Transistor, N Channel, 10.6 A, 600 V, 0.342 ohm, 10 V, 4 V
N-Channel 6000 V 380 mOhm 19 nC CoolMOS P6 Power Transistor - DPAK-3
0402 10 nF 50V ±10% Tolerance X7R Surface Mount Multilayer Ceramic Capacitor
Power Field-Effect Transistor, 10.6A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO252-3, RoHSInfineon SCT
MOSFET, N-CH, 600V, 10.6A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 10.6A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.342ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 83W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles

Product Comparison

The three parts on the right have similar specifications to IPD60R380P6ATMA1.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Weight

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Max Operating Temperature

Min Operating Temperature

Technology

Number of Channels

Power Dissipation-Max

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Drain to Source Breakdown Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

RoHS Status

Surface Mount

Transistor Element Material

JESD-609 Code

Pbfree Code

Number of Terminations

Terminal Finish

Subcategory

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Operating Mode

Case Connection

Transistor Application

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

ECCN Code

Reach Compliance Code

Halogen Free

Lead Free

View Compare
IPD60R380P6ATMA1

Infineon Technologies

18 Weeks

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

PG-TO252-3

3.949996g

-55°C~150°C TJ

Tape & Reel (TR)

CoolMOS™ P6

2008

Active

1 (Unlimited)

150°C

-55°C

MOSFET (Metal Oxide)

1

83W Tc

12 ns

N-Channel

380mOhm @ 3.8A, 10V

4.5V @ 320μA

877pF @ 100V

10.6A Tc

19nC @ 10V

6ns

600V

10V

±20V

7 ns

33 ns

10.6A

20V

600V

600V

877pF

342mOhm

380 mΩ

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IPD60R950C6

Infineon Technologies

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-

-55°C~150°C TJ

Cut Tape (CT)

CoolMOS™

2008

Discontinued

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

37W Tc

-

N-Channel

950m Ω @ 1.5A, 10V

3.5V @ 130μA

280pF @ 100V

4.4A Tc

13nC @ 10V

-

600V

10V

±20V

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

YES

SILICON

e3

yes

2

Tin (Sn)

FET General Purpose Power

SINGLE

GULL WING

NOT SPECIFIED

NOT SPECIFIED

4

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

4.4A

0.95Ohm

12A

600V

46 mJ

-

-

-

-

IPD60R380P6ATMA1 vs IPD60R950C6
IPD65R1K4CFDATMA1

Infineon Technologies

18 Weeks

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

PG-TO252-3

-

-55°C~150°C TJ

Tape & Reel (TR)

CoolMOS™

2012

Active

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

28.4W Tc

-

N-Channel

1.4Ohm @ 1A, 10V

4.5V @ 100μA

262pF @ 100V

2.8A Tc

10nC @ 10V

-

650V

10V

±20V

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IPD60R380P6ATMA1 vs IPD65R1K4CFDATMA1
IPD60N10S412ATMA1

Infineon Technologies

14 Weeks

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

-

-

-55°C~175°C TJ

Tape & Reel (TR)

Automotive, AEC-Q101, OptiMOS™

2013

Active

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

94W Tc

6 ns

N-Channel

12.2m Ω @ 60A, 10V

3.5V @ 46μA

2470pF @ 25V

60A Tc

34nC @ 10V

3ns

-

10V

±20V

13 ns

9 ns

60A

20V

100V

-

-

-

-

ROHS3 Compliant

-

SILICON

e3

yes

2

Tin (Sn)

-

SINGLE

GULL WING

NOT SPECIFIED

NOT SPECIFIED

-

R-PSSO-G2

-

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

-

-

0.0122Ohm

240A

-

120 mJ

EAR99

not_compliant

Halogen Free

Contains Lead

IPD60R380P6ATMA1 vs IPD60N10S412ATMA1

Certification

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Part Number	Manufacturers	Description	Stock	Price
IPD60R380P6ATMA1 DISTI #V72:2272_06383827	Infineon Technologies AG	Trans MOSFET N-CH 600V 10.6A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	2500	1 $0.7549
IPD60R380P6ATMA1 DISTI #V36:1790_06383827	Infineon Technologies AG	Trans MOSFET N-CH 600V 10.6A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	0	2500 $0.7213
IPD60R380P6ATMA1 DISTI #IPD60R380P6ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 600V DPAK-3 RoHS: Compliant	0	2500 $0.75527 5000 $0.7273 12500 $0.71204
IPD60R380P6ATMA1 DISTI #IPD60R380P6ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 600V DPAK-3 RoHS: Compliant	0	1 $1.7 10 $1.527 100 $1.2274 500 $1.00844 1000 $0.83556
IPD60R380P6ATMA1 DISTI #IPD60R380P6ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 600V DPAK-3 RoHS: Compliant	0	1 $1.7 10 $1.527 100 $1.2274 500 $1.00844 1000 $0.83556
IPD60R380P6ATMA1 DISTI #IPD60R380P6ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 600(Min)V 10.6A 3-Pin TO-252 T/R RoHS: Compliant	0	2500 $0.7319 5000 $0.7059 10000 $0.6799 15000 $0.6569 25000 $0.6459
IPD60R380P6ATMA1 DISTI #SP001135814	Infineon Technologies AG	Trans MOSFET N-CH 600(Min)V 10.6A 3-Pin TO-252 T/R RoHS: Compliant	0	2500 $0.9409 5000 $0.7699 10000 $0.7049 15000 $0.6509 25000 $0.6049
IPD60R380P6ATMA1 DISTI #34AC1680	Infineon Technologies AG	MOSFET, N-CH, 600V, 10.6A, TO-252, Transistor Pol	0	1 $1.5 10 $1.28 25 $1.2 50 $1.11 100 $1.02 250 $0.96 500 $0.9 1000 $0.745
IPD60R380P6ATMA1 DISTI #726-IPD60R380P6ATMA1	Infineon Technologies AG	MOSFET N-Ch 600V 10.6A DPAK-2 RoHS: Compliant	135	1 $1.49 10 $1.27 100 $1.01 500 $0.891 1000 $0.738
IPD60R380P6ATMA1 DISTI #2781169	Infineon Technologies AG	MOSFET, N-CH, 600V, 10.6A, TO-252 RoHS: Compliant	0	5 $2.23 25 $1.94 100 $1.59 250 $1.34 500 $1.16 1000 $1.1 5000 $1.04
IPD60R380P6ATMA1 DISTI #2781169	Infineon Technologies AG	MOSFET, N-CH, 600V, 10.6A, TO-252	0	5 $1.35 25 $1.22 100 $0.973

Infineon Technologies IPD60R380P6ATMA1

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