Infineon Technologies IPD60R380P6ATMA1
- Part Number:
- IPD60R380P6ATMA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2486050-IPD60R380P6ATMA1
- Description:
- MOSFET N-CH 600V DPAK-3
- Datasheet:
- IPD60R380P6ATMA1
Infineon Technologies IPD60R380P6ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPD60R380P6ATMA1.
- Factory Lead Time18 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Supplier Device PackagePG-TO252-3
- Weight3.949996g
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesCoolMOS™ P6
- Published2008
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Number of Channels1
- Power Dissipation-Max83W Tc
- Turn On Delay Time12 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs380mOhm @ 3.8A, 10V
- Vgs(th) (Max) @ Id4.5V @ 320μA
- Input Capacitance (Ciss) (Max) @ Vds877pF @ 100V
- Current - Continuous Drain (Id) @ 25°C10.6A Tc
- Gate Charge (Qg) (Max) @ Vgs19nC @ 10V
- Rise Time6ns
- Drain to Source Voltage (Vdss)600V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)7 ns
- Turn-Off Delay Time33 ns
- Continuous Drain Current (ID)10.6A
- Gate to Source Voltage (Vgs)20V
- Max Dual Supply Voltage600V
- Drain to Source Breakdown Voltage600V
- Input Capacitance877pF
- Drain to Source Resistance342mOhm
- Rds On Max380 mΩ
- RoHS StatusROHS3 Compliant
IPD60R380P6ATMA1 Description
IPD60R380P6ATMA1 is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a drain to source voltage of 600V. The operating temperature of the IPD60R380P6ATMA1 is -55°C~150°C TJ and its maximum power dissipation is 83W Tc. IPD60R380P6ATMA1 has 3 pins and it is available in Tape & Reel (TR) packaging way. The Turn On Delay Time of IPD60R380P6ATMA1 is 12 ns and its Turn-Off Delay Time is 33 ns.
IPD60R380P6ATMA1 Features
Increased MOSFET dv/dt ruggedness
Extremely low losses due to very low FOM Rdson*Qg and Ross
Very high commutation ruggedness
Easy to use/drive
Pb-free plating, Halogen-free mold compound
IPD60R380P6ATMA1 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
IPD60R380P6ATMA1 is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a drain to source voltage of 600V. The operating temperature of the IPD60R380P6ATMA1 is -55°C~150°C TJ and its maximum power dissipation is 83W Tc. IPD60R380P6ATMA1 has 3 pins and it is available in Tape & Reel (TR) packaging way. The Turn On Delay Time of IPD60R380P6ATMA1 is 12 ns and its Turn-Off Delay Time is 33 ns.
IPD60R380P6ATMA1 Features
Increased MOSFET dv/dt ruggedness
Extremely low losses due to very low FOM Rdson*Qg and Ross
Very high commutation ruggedness
Easy to use/drive
Pb-free plating, Halogen-free mold compound
IPD60R380P6ATMA1 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
IPD60R380P6ATMA1 More Descriptions
MOSFET Transistor, N Channel, 10.6 A, 600 V, 0.342 ohm, 10 V, 4 V
N-Channel 6000 V 380 mOhm 19 nC CoolMOS P6 Power Transistor - DPAK-3
0402 10 nF 50V ±10% Tolerance X7R Surface Mount Multilayer Ceramic Capacitor
Power Field-Effect Transistor, 10.6A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO252-3, RoHSInfineon SCT
MOSFET, N-CH, 600V, 10.6A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 10.6A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.342ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 83W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
N-Channel 6000 V 380 mOhm 19 nC CoolMOS P6 Power Transistor - DPAK-3
0402 10 nF 50V ±10% Tolerance X7R Surface Mount Multilayer Ceramic Capacitor
Power Field-Effect Transistor, 10.6A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO252-3, RoHSInfineon SCT
MOSFET, N-CH, 600V, 10.6A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 10.6A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.342ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 83W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
The three parts on the right have similar specifications to IPD60R380P6ATMA1.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureTechnologyNumber of ChannelsPower Dissipation-MaxTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Max Dual Supply VoltageDrain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxRoHS StatusSurface MountTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsTerminal FinishSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)ECCN CodeReach Compliance CodeHalogen FreeLead FreeView Compare
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IPD60R380P6ATMA118 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633PG-TO252-33.949996g-55°C~150°C TJTape & Reel (TR)CoolMOS™ P62008Active1 (Unlimited)150°C-55°CMOSFET (Metal Oxide)183W Tc12 nsN-Channel380mOhm @ 3.8A, 10V4.5V @ 320μA877pF @ 100V10.6A Tc19nC @ 10V6ns600V10V±20V7 ns33 ns10.6A20V600V600V877pF342mOhm380 mΩROHS3 Compliant-----------------------------
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--Surface MountTO-252-3, DPak (2 Leads Tab), SC-63----55°C~150°C TJCut Tape (CT)CoolMOS™2008Discontinued1 (Unlimited)--MOSFET (Metal Oxide)-37W Tc-N-Channel950m Ω @ 1.5A, 10V3.5V @ 130μA280pF @ 100V4.4A Tc13nC @ 10V-600V10V±20V---------ROHS3 CompliantYESSILICONe3yes2Tin (Sn)FET General Purpose PowerSINGLEGULL WINGNOT SPECIFIEDNOT SPECIFIED4R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING4.4A0.95Ohm12A600V46 mJ----
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18 Weeks-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-PG-TO252-3--55°C~150°C TJTape & Reel (TR)CoolMOS™2012Active1 (Unlimited)--MOSFET (Metal Oxide)-28.4W Tc-N-Channel1.4Ohm @ 1A, 10V4.5V @ 100μA262pF @ 100V2.8A Tc10nC @ 10V-650V10V±20V---------ROHS3 Compliant----------------------------
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14 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633---55°C~175°C TJTape & Reel (TR)Automotive, AEC-Q101, OptiMOS™2013Active1 (Unlimited)--MOSFET (Metal Oxide)-94W Tc6 nsN-Channel12.2m Ω @ 60A, 10V3.5V @ 46μA2470pF @ 25V60A Tc34nC @ 10V3ns-10V±20V13 ns9 ns60A20V100V----ROHS3 Compliant-SILICONe3yes2Tin (Sn)-SINGLEGULL WINGNOT SPECIFIEDNOT SPECIFIED-R-PSSO-G2-1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAIN--0.0122Ohm240A-120 mJEAR99not_compliantHalogen FreeContains Lead
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