Infineon Technologies IPD60R380E6BTMA1
- Part Number:
- IPD60R380E6BTMA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2493054-IPD60R380E6BTMA1
- Description:
- MOSFET NCH 600V 10.6A TO252
- ECAD Model:
-
- Datasheet:
- IPD60R380E6BTMA1
Infineon Technologies IPD60R380E6BTMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPD60R380E6BTMA1.
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Supplier Device PackagePG-TO252-3
- Operating Temperature-55°C~155°C TJ
- PackagingBulk
- SeriesCoolMOS™
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max83W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs380mOhm @ 3.8A, 10V
- Vgs(th) (Max) @ Id3.5V @ 300μA
- Input Capacitance (Ciss) (Max) @ Vds700pF @ 100V
- Current - Continuous Drain (Id) @ 25°C10.6A Tc
- Gate Charge (Qg) (Max) @ Vgs32nC @ 10V
- Drain to Source Voltage (Vdss)600V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- FET FeatureSuper Junction
- RoHS StatusNon-RoHS Compliant
IPD60R380E6BTMA1 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 700pF @ 100V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IPD60R380E6BTMA1 Features
a 600V drain to source voltage (Vdss)
IPD60R380E6BTMA1 Applications
There are a lot of Rochester Electronics, LLC
IPD60R380E6BTMA1 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 700pF @ 100V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IPD60R380E6BTMA1 Features
a 600V drain to source voltage (Vdss)
IPD60R380E6BTMA1 Applications
There are a lot of Rochester Electronics, LLC
IPD60R380E6BTMA1 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IPD60R380E6BTMA1 More Descriptions
Trans MOSFET N-CH 600V 10.6A 3-Pin TO-252 T/R
Compliant Surface Mount 8 ns 9 ns 380 mΩ TO-252-3 3 700 pF
COOLMOS N-CHANNEL POWER MOSFET
Compliant Surface Mount 8 ns 9 ns 380 mΩ TO-252-3 3 700 pF
COOLMOS N-CHANNEL POWER MOSFET
The three parts on the right have similar specifications to IPD60R380E6BTMA1.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)FET FeatureRoHS StatusVgs(th) (Max) @ Id:Technology:Supplier Device Package:Series:Rds On (Max) @ Id, Vgs:Power Dissipation (Max):Packaging:Package / Case:Operating Temperature:Mounting Type:Input Capacitance (Ciss) (Max) @ Vds:Gate Charge (Qg) (Max) @ Vgs:FET Type:FET Feature:Drain to Source Voltage (Vdss):Current - Continuous Drain (Id) @ 25°C:Factory Lead TimeSurface MountNumber of PinsTransistor Element MaterialPublishedJESD-609 CodePbfree CodeNumber of TerminationsTerminal FinishTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeTransistor ApplicationHalogen FreeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)HeightLengthWidthMountECCN CodeTerminal PositionConfigurationMax Dual Supply VoltageLead FreeView Compare
-
IPD60R380E6BTMA1Surface MountTO-252-3, DPak (2 Leads Tab), SC-63PG-TO252-3-55°C~155°C TJBulkCoolMOS™Obsolete1 (Unlimited)MOSFET (Metal Oxide)83W TcN-Channel380mOhm @ 3.8A, 10V3.5V @ 300μA700pF @ 100V10.6A Tc32nC @ 10V600V10V±20VSuper JunctionNon-RoHS Compliant----------------------------------------------------------- -
---------------------3.5V @ 230µAMOSFET (Metal Oxide)PG-TO252-3CoolMOS™520 mOhm @ 2.8A, 10V66W (Tc)Tape & Reel (TR)TO-252-3, DPak (2 Leads Tab), SC-63-55°C ~ 150°C (TJ)Surface Mount512pF @ 100V23.4nC @ 10VN-Channel-600V8.1A (Tc)------------------------------------------
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--55°C~150°C TJTape & Reel (TR)CoolMOS™ E6Not For New Designs1 (Unlimited)MOSFET (Metal Oxide)63W TcN-Channel600m Ω @ 2.1A, 10V3.5V @ 210μA440pF @ 100V7.3A Tc23nC @ 10V650V10V±20V-ROHS3 Compliant----------------12 WeeksYES3SILICON2008e3no2Tin (Sn)GULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIED4R-PSSO-G2Not Qualified1SingleENHANCEMENT MODE63WDRAIN10 nsSWITCHINGHalogen Free8ns11 ns64 ns7.3A20V0.6Ohm700V18A142 mJ2.41mm6.73mm6.22mm------
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--55°C~175°C TJTape & Reel (TR)Automotive, AEC-Q101, OptiMOS™Active1 (Unlimited)MOSFET (Metal Oxide)94W TcN-Channel12.2m Ω @ 60A, 10V3.5V @ 46μA2470pF @ 25V60A Tc34nC @ 10V-10V±20V-ROHS3 Compliant----------------14 Weeks-3SILICON2013e3yes2Tin (Sn)GULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIED-R-PSSO-G2-1-ENHANCEMENT MODE-DRAIN6 ns-Halogen Free3ns13 ns9 ns60A20V0.0122Ohm-240A120 mJ---Surface MountEAR99SINGLESINGLE WITH BUILT-IN DIODE100VContains Lead
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
13 September 2023
AT89S52-24PU Microcontroller Equivalent, Features and Working Principle
Ⅰ. AT89S52-24PU overviewAT89S52 is a low-voltage, high-performance 8-bit CMOS microcontroller with 8K bytes of in-circuit programmable flash memory (ISP). AT89S52 is a high-density non-volatile memory compatible with the... -
13 September 2023
The Difference Between CR2016 and CR2032 Button Batteries
Although CR2032 and CR2016 batteries are common coin-type batteries with similar appearance and the same voltage, they have obvious differences in power capacity and size. Below we will... -
14 September 2023
L7809CV Pin Connection, Technical Parameters and Features
Ⅰ. What is L7809CV?L7809CV is a linear voltage regulator with a fixed output voltage and is a type of three-terminal voltage regulator. It uses a series voltage stabilizing... -
14 September 2023
TDA7297 VS TDA7266: What Is The Difference?
In audio equipment, the power amplifier is one of the crucial components. It can amplify low-voltage, low-current signals into high-voltage, high-current signals, thereby increasing output power. Among them,...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.