Infineon Technologies IPD60R380E6ATMA2

Name: IPD60R380E6ATMA2
Brand: Infineon Technologies
SKU: 2493041-IPD60R380E6ATMA2
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPD60R380E6ATMA2

Manufacturer:: Infineon Technologies

Ventron No:: 2493041-IPD60R380E6ATMA2

Description:: MOSFET NCH 600V 10.6A TO252

ECAD Model:

Datasheet:: IPD60R380E6ATMA2

Specifications

Infineon Technologies IPD60R380E6ATMA2 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPD60R380E6ATMA2.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Supplier Device Package
PG-TO252-3
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Series
CoolMOS™
Published
2008
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
83W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
380mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id
3.5V @ 300μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
700pF @ 100V
Current - Continuous Drain (Id) @ 25°C
10.6A Tc
Gate Charge (Qg) (Max) @ Vgs
32nC @ 10V
Drain to Source Voltage (Vdss)
600V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
10.6A
Max Dual Supply Voltage
600V
Input Capacitance
700pF
FET Feature
Super Junction
Rds On Max
380 mΩ
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead

Description

IPD60R380E6ATMA2 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 700pF @ 100V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 10.6A amps.As it is powered by 600V, it can support the maximum dual supply voltage.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IPD60R380E6ATMA2 Features
a continuous drain current (ID) of 10.6A
a 600V drain to source voltage (Vdss)

IPD60R380E6ATMA2 Applications
There are a lot of Infineon Technologies
IPD60R380E6ATMA2 applications of single MOSFETs transistors.

Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies

IPD60R380E6ATMA2 More Descriptions

CoolMOS E6 Power Transistor N-Channel 600V 10.6A 3-Pin TO-252
CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHSInfineon SCT
CoolMOS E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Very high commutation ruggedness; Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss); Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

Product Comparison

The three parts on the right have similar specifications to IPD60R380E6ATMA2.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Max Operating Temperature

Min Operating Temperature

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Max Dual Supply Voltage

Input Capacitance

FET Feature

Rds On Max

RoHS Status

Lead Free

Vgs(th) (Max) @ Id:

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

Factory Lead Time

Number of Elements

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Gate to Source Voltage (Vgs)

Transistor Element Material

Pbfree Code

Number of Terminations

ECCN Code

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Configuration

Operating Mode

Case Connection

Transistor Application

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

View Compare
IPD60R380E6ATMA2

Infineon Technologies

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

PG-TO252-3

-55°C~150°C TJ

Bulk

CoolMOS™

2008

Obsolete

1 (Unlimited)

150°C

-55°C

MOSFET (Metal Oxide)

83W Tc

N-Channel

380mOhm @ 3.8A, 10V

3.5V @ 300μA

Halogen Free

700pF @ 100V

10.6A Tc

32nC @ 10V

600V

10V

±20V

10.6A

600V

700pF

Super Junction

380 mΩ

Non-RoHS Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IPD60R520C6

Infineon Technologies

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

3.5V @ 230µA

MOSFET (Metal Oxide)

PG-TO252-3

CoolMOS™

520 mOhm @ 2.8A, 10V

66W (Tc)

Tape & Reel (TR)

TO-252-3, DPak (2 Leads Tab), SC-63

-55°C ~ 150°C (TJ)

Surface Mount

512pF @ 100V

23.4nC @ 10V

N-Channel

-

600V

8.1A (Tc)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

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-

-

-

IPD60R380E6ATMA2 vs IPD60R520C6
IPD65R420CFDATMA1

Infineon Technologies

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

PG-TO252-3

-55°C~150°C TJ

Tape & Reel (TR)

CoolMOS™

2008

Active

1 (Unlimited)

150°C

-55°C

MOSFET (Metal Oxide)

83.3W Tc

N-Channel

420mOhm @ 3.4A, 10V

4.5V @ 300μA

-

870pF @ 100V

8.7A Tc

31.5nC @ 10V

650V

10V

±20V

8.7A

650V

870pF

-

420 mΩ

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

18 Weeks

1

83.3W

10 ns

7ns

8 ns

38 ns

20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IPD60R380E6ATMA2 vs IPD65R420CFDATMA1
IPD65R1K0CEAUMA1

Infineon Technologies

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-55°C~150°C TJ

Tape & Reel (TR)

CoolMOS™

2013

Active

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

68W Tc

N-Channel

1 Ω @ 1.5A, 10V

3.5V @ 200μA

Halogen Free

328pF @ 100V

7.2A Tc

15.3nC @ 10V

-

10V

±20V

7.2A

650V

-

Super Junction

-

ROHS3 Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

6 Weeks

1

-

-

-

-

-

-

SILICON

yes

2

EAR99

SINGLE

GULL WING

NOT SPECIFIED

NOT SPECIFIED

R-PSSO-G2

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

1Ohm

12A

50 mJ

IPD60R380E6ATMA2 vs IPD65R1K0CEAUMA1