Infineon Technologies IPD30N08S2L-21

Name: IPD30N08S2L-21
Brand: Infineon Technologies
SKU: 2478862-IPD30N08S2L-21
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPD30N08S2L-21

Manufacturer:: Infineon Technologies

Ventron No:: 2478862-IPD30N08S2L-21

Description:: MOSFET N-CH 75V 30A TO252-3

ECAD Model:

Datasheet:: IPD30N08S2L-21

Specifications

Infineon Technologies IPD30N08S2L-21 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPD30N08S2L-21.

Package / Case
PG-TO252-3
Packaging
Tape & Reel (TR)
FET Type
N Channel
Rds On (Max) @ Id, Vgs
20.5mΩ @ 25A,10V
Vgs(th) (Max) @ Id
2V @ 80uA
Drain to Source Voltage (Vdss)
75V
Continuous Drain Current (Id) @ 25°C
30A Tc
Power Dissipation-Max (Ta=25°C)
136W Tc
RoHS Status
RoHS Compliant

Description

IPD30N08S2L-21 Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IPD30N08S2L-21 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IPD30N08S2L-21. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

Product Comparison

The three parts on the right have similar specifications to IPD30N08S2L-21.

Image

Part Number

Manufacturer

Package / Case

Packaging

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Drain to Source Voltage (Vdss)

Continuous Drain Current (Id) @ 25°C

Power Dissipation-Max (Ta=25°C)

RoHS Status

Mounting Type

Surface Mount

Transistor Element Material

Operating Temperature

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Additional Feature

Reference Standard

View Compare
IPD30N08S2L-21

Infineon Technologies

PG-TO252-3

Tape & Reel (TR)

N Channel

20.5mΩ @ 25A,10V

2V @ 80uA

75V

30A Tc

136W Tc

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IPD30N06S2-15

Infineon Technologies

TO-252-3, DPak (2 Leads Tab), SC-63

Tape & Reel (TR)

N-Channel

14.7m Ω @ 30A, 10V

4V @ 80μA

55V

-

-

ROHS3 Compliant

Surface Mount

YES

SILICON

-55°C~175°C TJ

OptiMOS™

2006

e3

yes

Discontinued

1 (Unlimited)

2

EAR99

Matte Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

NOT SPECIFIED

4

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

136W Tc

ENHANCEMENT MODE

DRAIN

1485pF @ 25V

30A Tc

110nC @ 10V

10V

±20V

30A

0.0147Ohm

120A

55V

240 mJ

-

-

IPD30N08S2L-21 vs IPD30N06S2-15
IPD30N06S2L23ATMA1

Infineon Technologies

TO-252-3, DPak (2 Leads Tab), SC-63

Tape & Reel (TR)

N-Channel

23m Ω @ 22A, 10V

2V @ 50μA

55V

-

-

ROHS3 Compliant

Surface Mount

YES

SILICON

-55°C~175°C TJ

OptiMOS™

2006

-

-

Discontinued

1 (Unlimited)

2

EAR99

-

-

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

NOT SPECIFIED

-

R-PSSO-G2

-

1

SINGLE WITH BUILT-IN DIODE

100W Tc

ENHANCEMENT MODE

DRAIN

1091pF @ 25V

30A Tc

42nC @ 10V

4.5V 10V

±20V

30A

0.03Ohm

120A

55V

150 mJ

ULTRA LOW RESISTANCE

AEC-Q101

IPD30N08S2L-21 vs IPD30N06S2L23ATMA1
IPD30N06S223ATMA1

Infineon Technologies

TO-252-3, DPak (2 Leads Tab), SC-63

Tape & Reel (TR)

N-Channel

23m Ω @ 21A, 10V

4V @ 50μA

55V

-

-

ROHS3 Compliant

Surface Mount

YES

SILICON

-55°C~175°C TJ

OptiMOS™

2006

-

-

Discontinued

1 (Unlimited)

2

EAR99

-

-

MOSFET (Metal Oxide)

SINGLE

GULL WING

-

-

-

R-PSSO-G2

-

1

SINGLE WITH BUILT-IN DIODE

100W Tc

ENHANCEMENT MODE

DRAIN

901pF @ 25V

30A Tc

32nC @ 10V

10V

±20V

30A

0.023Ohm

120A

55V

150 mJ

-

-

IPD30N08S2L-21 vs IPD30N06S223ATMA1