Infineon Technologies IPD30N03S4L-09

Name: IPD30N03S4L-09
Brand: Infineon Technologies
SKU: 3070161-IPD30N03S4L-09
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPD30N03S4L-09

Manufacturer:: Infineon Technologies

Ventron No:: 3070161-IPD30N03S4L-09

Description:: MOSFET N-CH 30V 30A TO252-3

ECAD Model:

Datasheet:: IPD30N03S4L-09

Specifications

Infineon Technologies IPD30N03S4L-09 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPD30N03S4L-09.

Surface Mount
YES
Number of Terminals
2
Transistor Element Material
SILICON
Pbfree Code
icon-pbfree yes
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
FET General Purpose Power
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
4
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Operating Temperature (Max)
175°C
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Polarity/Channel Type
N-CHANNEL
JEDEC-95 Code
TO-252
Drain Current-Max (Abs) (ID)
30A
Drain-source On Resistance-Max
0.009Ohm
Pulsed Drain Current-Max (IDM)
120A
DS Breakdown Voltage-Min
30V
Avalanche Energy Rating (Eas)
28 mJ
FET Technology
METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs)
42W
RoHS Status
RoHS Compliant

Description

IPD30N03S4L-09 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 28 mJ.There is no drain current on this device since the maximum continuous current it can conduct is 30A.There is a peak drain current of 120A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 30V, it should remain above the 30V level.

IPD30N03S4L-09 Features
the avalanche energy rating (Eas) is 28 mJ
based on its rated peak drain current 120A.

IPD30N03S4L-09 Applications
There are a lot of Infineon Technologies AG
IPD30N03S4L-09 applications of single MOSFETs transistors.

DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.

Product Comparison

The three parts on the right have similar specifications to IPD30N03S4L-09.

Image

Part Number

Manufacturer

Surface Mount

Number of Terminals

Transistor Element Material

Pbfree Code

Moisture Sensitivity Level (MSL)

ECCN Code

Subcategory

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Operating Temperature (Max)

Number of Elements

Configuration

Operating Mode

Case Connection

Polarity/Channel Type

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

FET Technology

Power Dissipation-Max (Abs)

RoHS Status

Mounting Type

Package / Case

Supplier Device Package

Operating Temperature

Packaging

Series

Part Status

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Published

Number of Terminations

Transistor Application

Factory Lead Time

JESD-609 Code

Terminal Finish

Reference Standard

View Compare
IPD30N03S4L-09

Infineon Technologies

YES

2

SILICON

icon-pbfree yes

1 (Unlimited)

EAR99

FET General Purpose Power

SINGLE

GULL WING

NOT SPECIFIED

compliant

NOT SPECIFIED

4

R-PSSO-G2

Not Qualified

175°C

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

N-CHANNEL

TO-252

30A

0.009Ohm

120A

30V

28 mJ

METAL-OXIDE SEMICONDUCTOR

42W

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IPD30N03S2L07ATMA1

Infineon Technologies

-

-

-

-

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

PG-TO252-3

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

Obsolete

MOSFET (Metal Oxide)

136W Tc

N-Channel

6.7mOhm @ 30A, 10V

2V @ 85μA

1.9pF @ 25V

30A Tc

68nC @ 10V

30V

4.5V 10V

±20V

-

-

-

-

-

-

-

IPD30N03S4L-09 vs IPD30N03S2L07ATMA1
IPD33CN10NGBUMA1

Infineon Technologies

YES

-

SILICON

no

3 (168 Hours)

EAR99

FET General Purpose Powers

SINGLE

GULL WING

NOT SPECIFIED

compliant

NOT SPECIFIED

3

R-PSSO-G2

Not Qualified

-

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

-

TO-252AA

27A

0.033Ohm

108A

100V

47 mJ

-

-

RoHS Compliant

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

Obsolete

MOSFET (Metal Oxide)

58W Tc

N-Channel

33m Ω @ 27A, 10V

4V @ 29μA

1570pF @ 50V

27A Tc

24nC @ 10V

100V

10V

±20V

2013

2

SWITCHING

-

-

-

-

IPD30N03S4L-09 vs IPD33CN10NGBUMA1
IPD35N12S3L24ATMA1

Infineon Technologies

YES

-

SILICON

-

1 (Unlimited)

EAR99

-

SINGLE

GULL WING

NOT SPECIFIED

not_compliant

NOT SPECIFIED

-

R-PSSO-G2

-

-

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

-

-

35A

0.032Ohm

140A

120V

175 mJ

-

-

ROHS3 Compliant

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

Active

MOSFET (Metal Oxide)

71W Tc

N-Channel

24m Ω @ 35A, 10V

2.4V @ 39μA

2700pF @ 25V

35A Tc

39nC @ 10V

120V

4.5V 10V

±20V

2017

2

-

12 Weeks

e3

Tin (Sn)

AEC-Q101

IPD30N03S4L-09 vs IPD35N12S3L24ATMA1