Infineon Technologies IPD30N06S2L-13

Name: IPD30N06S2L-13
Brand: Infineon Technologies
SKU: 2493626-IPD30N06S2L-13
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPD30N06S2L-13

Manufacturer:: Infineon Technologies

Ventron No:: 2493626-IPD30N06S2L-13

Description:: MOSFET N-CH 55V 30A TO252-3

ECAD Model:

Datasheet:: IPD30N06S2L-13

Specifications

Infineon Technologies IPD30N06S2L-13 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPD30N06S2L-13.

Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
OptiMOS™
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
LOGIC LEVEL COMPATIBLE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
4
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
136W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
13m Ω @ 30A, 10V
Vgs(th) (Max) @ Id
2V @ 80μA
Input Capacitance (Ciss) (Max) @ Vds
1800pF @ 25V
Current - Continuous Drain (Id) @ 25°C
30A Tc
Gate Charge (Qg) (Max) @ Vgs
69nC @ 10V
Drain to Source Voltage (Vdss)
55V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
30A
Drain-source On Resistance-Max
0.017Ohm
Pulsed Drain Current-Max (IDM)
200A
DS Breakdown Voltage-Min
55V
Avalanche Energy Rating (Eas)
240 mJ
RoHS Status
ROHS3 Compliant

Description

IPD30N06S2L-13 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 240 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1800pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 30A.There is a peak drain current of 200A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 55V, it should remain above the 55V level.The transistor must receive a 55V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

IPD30N06S2L-13 Features
the avalanche energy rating (Eas) is 240 mJ
based on its rated peak drain current 200A.
a 55V drain to source voltage (Vdss)

IPD30N06S2L-13 Applications
There are a lot of Infineon Technologies
IPD30N06S2L-13 applications of single MOSFETs transistors.

DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.

Product Comparison

The three parts on the right have similar specifications to IPD30N06S2L-13.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Factory Lead Time

Reach Compliance Code

Reference Standard

View Compare
IPD30N06S2L-13

Infineon Technologies

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2006

e3

yes

Discontinued

1 (Unlimited)

2

EAR99

Matte Tin (Sn)

LOGIC LEVEL COMPATIBLE

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

NOT SPECIFIED

4

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

136W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

13m Ω @ 30A, 10V

2V @ 80μA

1800pF @ 25V

30A Tc

69nC @ 10V

55V

4.5V 10V

±20V

30A

0.017Ohm

200A

55V

240 mJ

ROHS3 Compliant

-

-

-

-
IPD35N10S3L26ATMA1

Infineon Technologies

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2011

e3

-

Active

1 (Unlimited)

2

EAR99

Tin (Sn)

-

-

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

NOT SPECIFIED

-

R-PSSO-G2

-

1

SINGLE WITH BUILT-IN DIODE

71W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

-

24m Ω @ 35A, 10V

2.4V @ 39μA

2700pF @ 25V

35A Tc

39nC @ 10V

100V

4.5V 10V

±20V

35A

0.0319Ohm

140A

100V

175 mJ

ROHS3 Compliant

12 Weeks

not_compliant

AEC-Q101

IPD30N06S2L-13 vs IPD35N10S3L26ATMA1
IPD30N06S2L23ATMA1

Infineon Technologies

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2006

-

-

Discontinued

1 (Unlimited)

2

EAR99

-

ULTRA LOW RESISTANCE

-

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

NOT SPECIFIED

-

R-PSSO-G2

-

1

SINGLE WITH BUILT-IN DIODE

100W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

-

23m Ω @ 22A, 10V

2V @ 50μA

1091pF @ 25V

30A Tc

42nC @ 10V

55V

4.5V 10V

±20V

30A

0.03Ohm

120A

55V

150 mJ

ROHS3 Compliant

-

-

AEC-Q101

IPD30N06S2L-13 vs IPD30N06S2L23ATMA1
IPD35N12S3L24ATMA1

Infineon Technologies

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2017

e3

-

Active

1 (Unlimited)

2

EAR99

Tin (Sn)

-

-

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

NOT SPECIFIED

-

R-PSSO-G2

-

1

SINGLE WITH BUILT-IN DIODE

71W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

-

24m Ω @ 35A, 10V

2.4V @ 39μA

2700pF @ 25V

35A Tc

39nC @ 10V

120V

4.5V 10V

±20V

35A

0.032Ohm

140A

120V

175 mJ

ROHS3 Compliant

12 Weeks

not_compliant

AEC-Q101

IPD30N06S2L-13 vs IPD35N12S3L24ATMA1

Certification

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IPD30N06S2L-13 Specification

Part Number	Manufacturers	Description	Stock	Price
IPD30N06S2L13ATMA4 DISTI #	Infineon Technologies AG	MOSFET N-CH 55V 30A TO252-3 RoHS: Compliant	5293	1 $1.34 10 $1.186 100 $0.9377 500 $0.72718 1000 $0.57408
IPD30N06S2L13ATMA4 DISTI #	Infineon Technologies AG	MOSFET N-CH 55V 30A TO252-3 RoHS: Compliant	5293	1 $1.34 10 $1.186 100 $0.9377 500 $0.72718 1000 $0.57408
IPD30N06S2L13ATMA4 DISTI #	Infineon Technologies AG	MOSFET N-CH 55V 30A TO252-3 RoHS: Compliant	5000	2500 $0.52021
IPD30N06S2L-13 DISTI #	Infineon Technologies AG	MOSFET N-CH 55V 30A TO252-3 RoHS: Compliant	0
IPD30N06S2L-13 DISTI #	Infineon Technologies AG	MOSFET N-CH 55V 30A TO252-3 RoHS: Compliant	0
IPD30N06S2L-13 DISTI #	Infineon Technologies AG	MOSFET N-CH 55V 30A TO252-3 RoHS: Compliant	0
IPD30N06S2L-13 DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 55V 30A 3-Pin TO-252 T/R (Alt: I RoHS: Compliant	0
IPD30N06S2L13ATMA4 DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 55V 30A 3-Pin TO-252 T/R - Tape RoHS: Compliant	0	2500 $0.4859 5000 $0.4689 10000 $0.4519 15000 $0.4369 25000 $0.4289
IPD30N06S2L13ATMA4 DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 55V 30A 3-Pin TO-252 T/R (Alt: S RoHS: Compliant	0	2500 $0.7539 5000 $0.5879 10000 $0.5259 15000 $0.4779 25000 $0.4479
IPD30N06S2L13ATMA4 DISTI #	Infineon Technologies AG	MOSFET, AEC-Q101, N-CH, 55V, TO-252, Transistor P	1499	1 $1.11 10 $0.946 25 $0.873 50 $0.8 100 $0.727 250 $0.685 500 $0.642 1000 $0.507
IPD30N06S2L13ATMA1 DISTI #	Infineon Technologies AG	Power Field-Effect Transistor, 30A I(D), 55V, 0.01 RoHS: Compliant	2511	1 $0.55 25 $0.51 100 $0.49 500 $0.47 1000 $0.45
IPD30N06S2L13ATMA4 DISTI #	Infineon Technologies AG	MOSFET N-CHANNEL_55/60V RoHS: Compliant	26806	1 $1.11 10 $0.946 100 $0.727 500 $0.642 1000 $0.507 2500 $0.45 10000 $0.433
IPD30N06S2L-13 DISTI #	Infineon Technologies AG	MOSFET N-Ch 55V 30A DPAK-2 OptiMOS RoHS: Compliant	0
IPD30N06S2L13ATMA1 DISTI #	Infineon Technologies AG	MOSFET N-Ch 55V 30A DPAK-2 OptiMOS RoHS: Compliant	0
IPD30N06S2L13ATMA2 DISTI #	Infineon Technologies AG	MOSFET RoHS: Compliant	0
IPD30N06S2L13 DISTI #	Infineon Technologies AG	RoHS: Compliant	5200
IPD30N06S2L-13 DISTI #	Infineon Technologies AG	INSTOCK	5000
IPD30N06S2L13ATMA4 DISTI #	Infineon Technologies AG	MOSFET, AEC-Q101, N-CH, 55V, TO-252 RoHS: Compliant	1499	1 $2.13 10 $1.88 100 $1.49 500 $1.16 1000 $0.909
IPD30N06S2L13ATMA1 DISTI #	Infineon Technologies AG	MOSFET, N CH, 55V, 30A, TO-252-3 RoHS: Compliant	0	1 $1.56 10 $1.38 25 $1.25 100 $1.09 250 $0.956 500 $0.848 1000 $0.671
IPD30N06S2L13ATMA1 DISTI #	Infineon Technologies AG	MOSFET, N CH, 55V, 30A, TO-252-3 RoHS: Compliant	0	1 $1.56 10 $1.38 25 $1.25 100 $1.09 250 $0.956 500 $0.848 1000 $0.671
IPD30N06S2L13ATMA4 DISTI #	Infineon Technologies AG	MOSFET, AEC-Q101, N-CH, 55V, TO-252 RoHS: Compliant	1539	5 $0.806 25 $0.723 100 $0.556 250 $0.524 500 $0.491

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Infineon Technologies IPD30N06S2L-13

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