Infineon Technologies IPD135N08N3GATMA1

Name: IPD135N08N3GATMA1
Brand: Infineon Technologies
SKU: 2482393-IPD135N08N3GATMA1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPD135N08N3GATMA1

Manufacturer:: Infineon Technologies

Ventron No:: 2482393-IPD135N08N3GATMA1

Description:: MOSFET N-CH 80V 45A

ECAD Model:

Datasheet:: IPD135N08N3GATMA1

Specifications

Infineon Technologies IPD135N08N3GATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPD135N08N3GATMA1.

Factory Lead Time
18 Weeks
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
OptiMOS™
Published
2008
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
79W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
13.5m Ω @ 45A, 10V
Vgs(th) (Max) @ Id
3.5V @ 33μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
1730pF @ 40V
Current - Continuous Drain (Id) @ 25°C
45A Tc
Gate Charge (Qg) (Max) @ Vgs
25nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
JEDEC-95 Code
TO-252AA
Max Dual Supply Voltage
80V
Drain Current-Max (Abs) (ID)
45A
Drain-source On Resistance-Max
0.0135Ohm
Pulsed Drain Current-Max (IDM)
180A
Avalanche Energy Rating (Eas)
50 mJ
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead

Description

IPD135N08N3GATMA1 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 50 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1730pF @ 40V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 45A.Peak drain current is 180A, which is the maximum pulsed drain current.In addition to 80V, it supports dual voltages up to the maximum.Using drive voltage (6V 10V), this device contributes to a reduction in overall power consumption.

IPD135N08N3GATMA1 Features
the avalanche energy rating (Eas) is 50 mJ
based on its rated peak drain current 180A.

IPD135N08N3GATMA1 Applications
There are a lot of Infineon Technologies
IPD135N08N3GATMA1 applications of single MOSFETs transistors.

AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies

IPD135N08N3GATMA1 More Descriptions

Single N-Channel 80 V 13.5 mOhm 19 nC OptiMOS Power Mosfet - DPAK
MOSFET, N-CH, 80V, 45A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 45A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0114ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V; Power Dissipation Pd: 79W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS 3 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Power Field-Effect Transistor, 45A I(D), 80V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). | Summary of Features: Optimized technology for DC-DC converters; Excellent gate charge x R DS(ON) product (FOM); Superior thermal resistance; Dual sided cooling; Low parasitic inductance; Low profile (<0,7mm); N-channel, normal level; 100% avalanche tested; Pb-free plating; RoHS compliant | Target Applications: Solar; Consumer; Telecom; Server; PC power; DC-DC; AC-DC; Adapter; SMPS; LED; Motor control

Product Comparison

The three parts on the right have similar specifications to IPD135N08N3GATMA1.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

JEDEC-95 Code

Max Dual Supply Voltage

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

RoHS Status

Lead Free

Subcategory

Pin Count

Qualification Status

Drain to Source Voltage (Vdss)

DS Breakdown Voltage-Min

Supplier Device Package

View Compare
IPD135N08N3GATMA1

Infineon Technologies

18 Weeks

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2008

e3

Active

1 (Unlimited)

2

EAR99

Tin (Sn)

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

not_compliant

NOT SPECIFIED

R-PSSO-G2

1

SINGLE WITH BUILT-IN DIODE

79W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

13.5m Ω @ 45A, 10V

3.5V @ 33μA

Halogen Free

1730pF @ 40V

45A Tc

25nC @ 10V

6V 10V

±20V

TO-252AA

80V

45A

0.0135Ohm

180A

50 mJ

ROHS3 Compliant

Contains Lead

-

-

-

-

-

-

-
IPD16CN10N G

Infineon Technologies

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2008

e3

Obsolete

1 (Unlimited)

2

EAR99

MATTE TIN

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

compliant

40

R-PSSO-G2

1

SINGLE WITH BUILT-IN DIODE

100W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

16m Ω @ 53A, 10V

4V @ 61μA

-

3220pF @ 50V

53A Tc

48nC @ 10V

10V

±20V

-

-

53A

0.016Ohm

212A

107 mJ

RoHS Compliant

-

FET General Purpose Power

4

Not Qualified

100V

100V

-

IPD135N08N3GATMA1 vs IPD16CN10N G
IPD180N10N3GATMA1

Infineon Technologies

18 Weeks

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2014

-

Active

1 (Unlimited)

2

-

-

MOSFET (Metal Oxide)

SINGLE

GULL WING

-

-

-

R-PSSO-G2

1

SINGLE WITH BUILT-IN DIODE

71W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

18m Ω @ 33A, 10V

3.5V @ 33μA

-

1800pF @ 50V

43A Tc

25nC @ 10V

6V 10V

±20V

TO-252AA

-

43A

0.018Ohm

172A

50 mJ

ROHS3 Compliant

-

-

-

-

100V

100V

-

IPD135N08N3GATMA1 vs IPD180N10N3GATMA1
IPD110N12N3GBUMA1

Infineon Technologies

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

-

-

Obsolete

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

136W Tc

-

-

N-Channel

-

11mOhm @ 75A, 10V

4V @ 83μA

-

4.31pF @ 60V

75A Tc

65nC @ 10V

10V

±20V

-

-

-

-

-

-

ROHS3 Compliant

-

-

-

-

120V

-

PG-TO252-3

IPD135N08N3GATMA1 vs IPD110N12N3GBUMA1

Certification

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Part Number	Manufacturers	Description	Stock	Price
IPD135N08N3GATMA1 DISTI #V36:1790_14664329	Infineon Technologies AG	Trans MOSFET N-CH 80V 45A Automotive 3-Pin(2 Tab)	0	2500 $0.4226 25000 $0.4141 250000 $0.3633 1250000 $0.3352 2500000 $0.3349
IPD135N08N3GATMA1 DISTI #V72:2272_14664329	Infineon Technologies AG	Trans MOSFET N-CH 80V 45A Automotive 3-Pin(2 Tab)	0
IPD135N08N3GATMA1 DISTI #IPD135N08N3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 80V 45A RoHS: Compliant	170	1 $1.03 10 $0.917 100 $0.7152 500 $0.59078 1000 $0.4664
IPD135N08N3GATMA1 DISTI #IPD135N08N3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 80V 45A RoHS: Compliant	170	1 $1.03 10 $0.917 100 $0.7152 500 $0.59078 1000 $0.4664
IPD135N08N3GATMA1 DISTI #IPD135N08N3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 80V 45A RoHS: Compliant	0	2500 $0.42262 5000 $0.40149 12500 $0.3864 25000 $0.38238
IPD135N08N3GATMA1 DISTI #IPD135N08N3GATMA1	Infineon Technologies AG	Trans MOSFET N 80V 45A 3-Pin TO-252 T/R - Tape and RoHS: Compliant	0	2500 $0.3309 5000 $0.3189 10000 $0.3069 15000 $0.2969 25000 $0.2919
IPD135N08N3GATMA1 DISTI #SP001127822	Infineon Technologies AG	Trans MOSFET N 80V 45A 3-Pin TO-252 T/R (Alt: SP00 RoHS: Compliant	0	2500 $0.4529 5000 $0.3699 10000 $0.3399 15000 $0.3129 25000 $0.2909
IPD135N08N3GATMA1 DISTI #34AC1667	Infineon Technologies AG	MOSFET, N-CH, 80V, 45A, TO-252, Transistor Polari	2500	1 $0.949 10 $0.813 25 $0.75 50 $0.688 100 $0.625 250 $0.589 500 $0.552 1000 $0.436
IPD135N08N3GATMA1 DISTI #726-IPD135N08N3GATMA	Infineon Technologies AG	MOSFET MV POWER MOS RoHS: Compliant	219	1 $0.94 10 $0.805 100 $0.619 500 $0.547 1000 $0.432 2500 $0.383 10000 $0.369
IPD135N08N3GATMA1 DISTI #2781079	Infineon Technologies AG	MOSFET, N-CH, 80V, 45A, TO-252 RoHS: Compliant	2450	5 $1.33 25 $1.16 100 $0.945 250 $0.797 500 $0.69 1000 $0.652 5000 $0.619
IPD135N08N3GATMA1 DISTI #2781079	Infineon Technologies AG	MOSFET, N-CH, 80V, 45A, TO-252	65	1 $0.82 10 $0.669 100 $0.473 250 $0.446 500 $0.418

Infineon Technologies IPD135N08N3GATMA1

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