Infineon Technologies IPD05N03LB G

Name: IPD05N03LB G
Brand: Infineon Technologies
SKU: 2492095-IPD05N03LB G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPD05N03LB G

Manufacturer:: Infineon Technologies

Ventron No:: 2492095-IPD05N03LB G

Description:: MOSFET N-CH 30V 90A DPAK

ECAD Model:

Datasheet:: IPD,IPS05N03LB G

Specifications

Infineon Technologies IPD05N03LB G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPD05N03LB G.

Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
OptiMOS™
Published
2008
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
MATTE TIN
Additional Feature
LOGIC LEVEL COMPATIBLE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
4
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
94W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
4.8m Ω @ 60A, 10V
Vgs(th) (Max) @ Id
2V @ 40μA
Input Capacitance (Ciss) (Max) @ Vds
3200pF @ 15V
Current - Continuous Drain (Id) @ 25°C
90A Tc
Gate Charge (Qg) (Max) @ Vgs
25nC @ 5V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
JEDEC-95 Code
TO-252AA
Drain Current-Max (Abs) (ID)
90A
Drain-source On Resistance-Max
0.0048Ohm
Pulsed Drain Current-Max (IDM)
420A
DS Breakdown Voltage-Min
30V
Avalanche Energy Rating (Eas)
120 mJ
RoHS Status
RoHS Compliant

Description

IPD05N03LB G Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 120 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3200pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 90A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 420A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 30V in order to maintain normal operation.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

IPD05N03LB G Features
the avalanche energy rating (Eas) is 120 mJ
based on its rated peak drain current 420A.
a 30V drain to source voltage (Vdss)

IPD05N03LB G Applications
There are a lot of Infineon Technologies
IPD05N03LB G applications of single MOSFETs transistors.

LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools

Product Comparison

The three parts on the right have similar specifications to IPD05N03LB G.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Mount

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

Pbfree Code

View Compare
IPD05N03LB G

Infineon Technologies

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2008

e3

Obsolete

3 (168 Hours)

2

EAR99

MATTE TIN

LOGIC LEVEL COMPATIBLE

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

compliant

NOT SPECIFIED

4

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

94W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

4.8m Ω @ 60A, 10V

2V @ 40μA

3200pF @ 15V

90A Tc

25nC @ 5V

30V

4.5V 10V

±20V

TO-252AA

90A

0.0048Ohm

420A

30V

120 mJ

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IPD031N03LGBTMA1

Infineon Technologies

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2011

-

Not For New Designs

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

1

-

94W Tc

-

-

N-Channel

-

3.1mOhm @ 30A, 10V

2.2V @ 250μA

5300pF @ 15V

90A Tc

51nC @ 10V

30V

4.5V 10V

±20V

-

-

-

-

-

-

ROHS3 Compliant

Surface Mount

PG-TO252-3

175°C

-55°C

94W

9 ns

6ns

5 ns

34 ns

90A

20V

30V

5.3nF

3.1mOhm

3.1 mΩ

-

IPD05N03LB G vs IPD031N03LGBTMA1
IPD031N03M G

Infineon Technologies

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2008

-

Discontinued

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

-

-

-

-

N-Channel

-

3.1mOhm @ 30A, 10V

2.2V @ 250μA

5300pF @ 15V

90A Tc

51nC @ 10V

30V

4.5V 10V

±20V

-

-

-

-

-

-

ROHS3 Compliant

-

PG-TO252-3

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IPD05N03LB G vs IPD031N03M G
IPD068P03L3GBTMA1

Infineon Technologies

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2008

e3

Obsolete

1 (Unlimited)

2

EAR99

Tin (Sn)

-

-

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

not_compliant

NOT SPECIFIED

4

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

100W Tc

ENHANCEMENT MODE

DRAIN

P-Channel

SWITCHING

6.8m Ω @ 70A, 10V

2V @ 150μA

7720pF @ 15V

70A Tc

91nC @ 10V

30V

4.5V 10V

±20V

-

70A

0.0068Ohm

280A

30V

149 mJ

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

no

IPD05N03LB G vs IPD068P03L3GBTMA1