Infineon Technologies IPD034N06N3 G

Name: IPD034N06N3 G
Brand: Infineon Technologies
SKU: 2478677-IPD034N06N3 G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPD034N06N3 G

Manufacturer:: Infineon Technologies

Ventron No:: 2478677-IPD034N06N3 G

Description:: MOSFET N-CH 60V 100A TO252-3

ECAD Model:

Datasheet:: IPD034N06N3 G

Specifications

Infineon Technologies IPD034N06N3 G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPD034N06N3 G.

Surface Mount
YES
Number of Terminals
2
Transistor Element Material
SILICON
JESD-609 Code
e3
Pbfree Code
icon-pbfree no
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
4
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Operating Temperature (Max)
175°C
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Transistor Application
SWITCHING
Polarity/Channel Type
N-CHANNEL
JEDEC-95 Code
TO-252AA
Drain Current-Max (Abs) (ID)
100A
Drain-source On Resistance-Max
0.0034Ohm
Pulsed Drain Current-Max (IDM)
400A
DS Breakdown Voltage-Min
60V
Avalanche Energy Rating (Eas)
149 mJ
FET Technology
METAL-OXIDE SEMICONDUCTOR
RoHS Status
RoHS Compliant

Description

IPD034N06N3 G Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 149 mJ.A device can conduct a maximum continuous current of [100A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 400A.The DS breakdown voltage should be maintained above 60V to maintain normal operation.

IPD034N06N3 G Features
the avalanche energy rating (Eas) is 149 mJ
based on its rated peak drain current 400A.

IPD034N06N3 G Applications
There are a lot of Infineon Technologies AG
IPD034N06N3 G applications of single MOSFETs transistors.

Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies

Product Comparison

The three parts on the right have similar specifications to IPD034N06N3 G.

Image

Part Number

Manufacturer

Surface Mount

Number of Terminals

Transistor Element Material

JESD-609 Code

Pbfree Code

Moisture Sensitivity Level (MSL)

ECCN Code

Terminal Finish

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Operating Temperature (Max)

Number of Elements

Configuration

Operating Mode

Case Connection

Transistor Application

Polarity/Channel Type

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

FET Technology

RoHS Status

Mount

Mounting Type

Package / Case

Supplier Device Package

Operating Temperature

Packaging

Series

Published

Part Status

Max Operating Temperature

Min Operating Temperature

Technology

Power Dissipation-Max

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

Number of Terminations

Additional Feature

Subcategory

View Compare
IPD034N06N3 G

Infineon Technologies

YES

2

SILICON

e3

icon-pbfree no

1 (Unlimited)

EAR99

Tin (Sn)

SINGLE

GULL WING

NOT SPECIFIED

not_compliant

NOT SPECIFIED

4

R-PSSO-G2

Not Qualified

175°C

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

N-CHANNEL

TO-252AA

100A

0.0034Ohm

400A

60V

149 mJ

METAL-OXIDE SEMICONDUCTOR

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IPD031N03LGBTMA1

Infineon Technologies

-

-

-

-

-

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

1

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

PG-TO252-3

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2011

Not For New Designs

175°C

-55°C

MOSFET (Metal Oxide)

94W Tc

94W

9 ns

N-Channel

3.1mOhm @ 30A, 10V

2.2V @ 250μA

5300pF @ 15V

90A Tc

51nC @ 10V

6ns

30V

4.5V 10V

±20V

5 ns

34 ns

90A

20V

30V

5.3nF

3.1mOhm

3.1 mΩ

-

-

-

IPD034N06N3 G vs IPD031N03LGBTMA1
IPD03N03LA G

Infineon Technologies

YES

-

SILICON

e3

-

1 (Unlimited)

EAR99

MATTE TIN

SINGLE

GULL WING

260

compliant

NOT SPECIFIED

4

R-PSSO-G2

Not Qualified

-

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

-

TO-252AA

90A

0.0051Ohm

360A

25V

300 mJ

-

RoHS Compliant

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2008

Obsolete

-

-

MOSFET (Metal Oxide)

115W Tc

-

-

N-Channel

3.2m Ω @ 60A, 10V

2V @ 70μA

5200pF @ 15V

90A Tc

41nC @ 5V

-

25V

4.5V 10V

±20V

-

-

-

-

-

-

-

-

2

LOGIC LEVEL COMPATIBLE

FET General Purpose Power

IPD034N06N3 G vs IPD03N03LA G
IPD031N03M G

Infineon Technologies

-

-

-

-

-

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

PG-TO252-3

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2008

Discontinued

-

-

MOSFET (Metal Oxide)

-

-

-

N-Channel

3.1mOhm @ 30A, 10V

2.2V @ 250μA

5300pF @ 15V

90A Tc

51nC @ 10V

-

30V

4.5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

IPD034N06N3 G vs IPD031N03M G