Infineon Technologies IPD031N03M G
- Part Number:
- IPD031N03M G
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2854244-IPD031N03M G
- Description:
- MOSFET N-CH 30V 90A TO252-3
- ECAD Model:
-
- Datasheet:
- IPD031N03L G, IPS031N03L G
Infineon Technologies IPD031N03M G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPD031N03M G.
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Supplier Device PackagePG-TO252-3
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesOptiMOS™
- Published2008
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs3.1mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id2.2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds5300pF @ 15V
- Current - Continuous Drain (Id) @ 25°C90A Tc
- Gate Charge (Qg) (Max) @ Vgs51nC @ 10V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- RoHS StatusROHS3 Compliant
IPD031N03M G Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 5300pF @ 15V.In order to operate this transistor, a voltage of 30V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
IPD031N03M G Features
a 30V drain to source voltage (Vdss)
IPD031N03M G Applications
There are a lot of Infineon Technologies
IPD031N03M G applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 5300pF @ 15V.In order to operate this transistor, a voltage of 30V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
IPD031N03M G Features
a 30V drain to source voltage (Vdss)
IPD031N03M G Applications
There are a lot of Infineon Technologies
IPD031N03M G applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IPD031N03M G More Descriptions
MOSFET N-CH 30V 90A TO252-3
N-CH 30V 90A 3mOhm TO252-3 RoHSconf
Multilayer Ceramic Capacitors MLCC - SMD/SMT
MOSFET, N CH, 90A, 30V, PG-TO252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 90A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0026ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Po
N-CH 30V 90A 3mOhm TO252-3 RoHSconf
Multilayer Ceramic Capacitors MLCC - SMD/SMT
MOSFET, N CH, 90A, 30V, PG-TO252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 90A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0026ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Po
The three parts on the right have similar specifications to IPD031N03M G.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)TechnologyFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusMountMax Operating TemperatureMin Operating TemperatureNumber of ElementsPower Dissipation-MaxPower DissipationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxView Compare
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IPD031N03M GSurface MountTO-252-3, DPak (2 Leads Tab), SC-63PG-TO252-3-55°C~175°C TJTape & Reel (TR)OptiMOS™2008Discontinued1 (Unlimited)MOSFET (Metal Oxide)N-Channel3.1mOhm @ 30A, 10V2.2V @ 250μA5300pF @ 15V90A Tc51nC @ 10V30V4.5V 10V±20VROHS3 Compliant----------------- -
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63PG-TO252-3-55°C~175°C TJTape & Reel (TR)OptiMOS™2011Not For New Designs1 (Unlimited)MOSFET (Metal Oxide)N-Channel3.1mOhm @ 30A, 10V2.2V @ 250μA5300pF @ 15V90A Tc51nC @ 10V30V4.5V 10V±20VROHS3 CompliantSurface Mount175°C-55°C194W Tc94W9 ns6ns5 ns34 ns90A20V30V5.3nF3.1mOhm3.1 mΩ
-
-PG-TO252-3--Tape & Reel (TR)--------------RoHS Compliant----------------
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63PG-TO252-3-55°C~175°C TJTape & Reel (TR)OptiMOS™-Obsolete1 (Unlimited)MOSFET (Metal Oxide)N-Channel9.6mOhm @ 46A, 10V3.5V @ 46μA2.41pF @ 40V73A Tc35nC @ 10V80V6V 10V±20VROHS3 Compliant----100W Tc-----------
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