Infineon Technologies IPB80N08S2L-07
- Part Number:
- IPB80N08S2L-07
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2849789-IPB80N08S2L-07
- Description:
- MOSFET N-CH 75V 80A TO263-3
- ECAD Model:
-
- Datasheet:
- IPB80N08S2L-07
Infineon Technologies IPB80N08S2L-07 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPB80N08S2L-07.
- Package / CasePG-TO263-3
- PackagingTape & Reel (TR)
- RoHS StatusRoHS Compliant
IPB80N08S2L-07 Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IPB80N08S2L-07 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IPB80N08S2L-07. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IPB80N08S2L-07 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IPB80N08S2L-07. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
The three parts on the right have similar specifications to IPB80N08S2L-07.
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ImagePart NumberManufacturerPackage / CasePackagingRoHS StatusFactory Lead TimeMountMounting TypeNumber of PinsTransistor Element MaterialOperating TemperatureSeriesPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureTechnologyTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdHalogen FreeInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Max Dual Supply VoltageDrain-source On Resistance-MaxDrain to Source Breakdown VoltageHeightLengthWidthLead FreeSurface MountTerminal PositionConfigurationDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Pulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)JESD-609 CodeTerminal FinishSubcategoryPin CountQualification StatusView Compare
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IPB80N08S2L-07PG-TO263-3Tape & Reel (TR)RoHS Compliant-------------------------------------------------------------- -
TO-263-3, D2Pak (2 Leads Tab), TO-263ABTape & Reel (TR)ROHS3 Compliant10 WeeksSurface MountSurface Mount3SILICON-55°C~175°C TJOptiMOS™2006yesActive1 (Unlimited)2EAR99LOGIC LEVEL COMPATIBLEMOSFET (Metal Oxide)GULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PSSO-G21250W TcSingleENHANCEMENT MODE250WDRAIN11 nsN-Channel6m Ω @ 69A, 10V2V @ 180μAHalogen Free3800pF @ 25V80A Tc150nC @ 10V21ns4.5V 10V±20V20 ns60 ns80A20V55V0.0084Ohm55V4.4mm10mm9.25mmContains Lead-------------
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TO-263-3, D2Pak (2 Leads Tab), TO-263ABTape & Reel (TR)ROHS3 Compliant--Surface Mount-SILICON-55°C~175°C TJOptiMOS™2006-Discontinued1 (Unlimited)2EAR99LOGIC LEVEL COMPATIBLEMOSFET (Metal Oxide)GULL WING---R-PSSO-G21190W Tc-ENHANCEMENT MODE-DRAIN-N-Channel8.2m Ω @ 52A, 10V2V @ 125μA-2620pF @ 25V80A Tc105nC @ 10V-4.5V 10V±20V-----0.011Ohm-----YESSINGLESINGLE WITH BUILT-IN DIODE55V80A320A55V370 mJ-----
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TO-263-3, D2Pak (2 Leads Tab), TO-263ABTape & Reel (TR)RoHS Compliant--Surface Mount-SILICON-55°C~175°C TJOptiMOS™2006yesObsolete1 (Unlimited)2EAR99LOGIC LEVEL COMPATIBLEMOSFET (Metal Oxide)GULL WINGNOT SPECIFIEDcompliantNOT SPECIFIEDR-PSSO-G21300W Tc-ENHANCEMENT MODE-DRAIN-N-Channel4.7m Ω @ 80A, 10V2V @ 250μA-5000pF @ 25V80A Tc190nC @ 10V-4.5V 10V±20V-----0.0062Ohm-----YESSINGLESINGLE WITH BUILT-IN DIODE55V80A320A55V700 mJe3Matte Tin (Sn)FET General Purpose Power4Not Qualified
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