Infineon Technologies IPB80N06S2H5ATMA1

IPB80N06S2H5ATMA1 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 700 mJ.The maximum input capacitance of this device is 4400pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 80A.There is no pulsed drain current maximum for this device based on its rated peak drain current 320A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 55V.The drain-to-source voltage (Vdss) of this transistor needs to be at 55V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IPB80N06S2H5ATMA1 Features
the avalanche energy rating (Eas) is 700 mJ
based on its rated peak drain current 320A.
a 55V drain to source voltage (Vdss)


IPB80N06S2H5ATMA1 Applications
There are a lot of Infineon Technologies
IPB80N06S2H5ATMA1 applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,