Infineon Technologies IPB80N06S209ATMA2
- Part Number:
- IPB80N06S209ATMA2
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2484498-IPB80N06S209ATMA2
- Description:
- MOSFET N-CH 55V 80A TO263-3
- ECAD Model:
-
- Datasheet:
- IPB80N06S209ATMA2
Infineon Technologies IPB80N06S209ATMA2 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPB80N06S209ATMA2.
- Factory Lead Time10 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesOptiMOS™
- Published2006
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max190W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs8.8m Ω @ 50A, 10V
- Vgs(th) (Max) @ Id4V @ 125μA
- Input Capacitance (Ciss) (Max) @ Vds2360pF @ 25V
- Current - Continuous Drain (Id) @ 25°C80A Tc
- Gate Charge (Qg) (Max) @ Vgs80nC @ 10V
- Drain to Source Voltage (Vdss)55V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)80A
- Drain-source On Resistance-Max0.0088Ohm
- Pulsed Drain Current-Max (IDM)320A
- DS Breakdown Voltage-Min55V
- Avalanche Energy Rating (Eas)370 mJ
- RoHS StatusROHS3 Compliant
IPB80N06S209ATMA2 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 370 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2360pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 80A.There is a peak drain current of 320A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 55V, it should remain above the 55V level.The transistor must receive a 55V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IPB80N06S209ATMA2 Features
the avalanche energy rating (Eas) is 370 mJ
based on its rated peak drain current 320A.
a 55V drain to source voltage (Vdss)
IPB80N06S209ATMA2 Applications
There are a lot of Infineon Technologies
IPB80N06S209ATMA2 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 370 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2360pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 80A.There is a peak drain current of 320A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 55V, it should remain above the 55V level.The transistor must receive a 55V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IPB80N06S209ATMA2 Features
the avalanche energy rating (Eas) is 370 mJ
based on its rated peak drain current 320A.
a 55V drain to source voltage (Vdss)
IPB80N06S209ATMA2 Applications
There are a lot of Infineon Technologies
IPB80N06S209ATMA2 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
IPB80N06S209ATMA2 More Descriptions
55V, N-Ch, 8.8 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™, PG-TO263-3, RoHSInfineon SCT
Trans MOSFET N-CH 55V 80A Automotive 3-Pin(2 Tab) D2PAK T/R
Power Field-Effect Transistor, 80A I(D), 55V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
Trans MOSFET N-CH 55V 80A Automotive 3-Pin(2 Tab) D2PAK T/R
Power Field-Effect Transistor, 80A I(D), 55V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
The three parts on the right have similar specifications to IPB80N06S209ATMA2.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusMountNumber of PinsJESD-609 CodeTerminal FinishAdditional FeatureTurn On Delay TimeHalogen FreeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Max Dual Supply VoltageRadiation HardeningView Compare
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IPB80N06S209ATMA210 WeeksSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~175°C TJTape & Reel (TR)OptiMOS™2006yesActive1 (Unlimited)2EAR99MOSFET (Metal Oxide)SINGLEGULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PSSO-G21SINGLE WITH BUILT-IN DIODE190W TcENHANCEMENT MODEDRAINN-Channel8.8m Ω @ 50A, 10V4V @ 125μA2360pF @ 25V80A Tc80nC @ 10V55V10V±20V80A0.0088Ohm320A55V370 mJROHS3 Compliant--------------- -
10 WeeksSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-55°C~175°C TJTape & Reel (TR)OptiMOS™2006yesActive1 (Unlimited)2EAR99MOSFET (Metal Oxide)SINGLEGULL WING---R-PSSO-G21SINGLE WITH BUILT-IN DIODE300W TcENHANCEMENT MODEDRAINN-Channel3.4m Ω @ 80A, 10V4V @ 250μA5300pF @ 25V80A Tc170nC @ 10V-10V±20V----810 mJROHS3 CompliantSurface Mount3e3Tin (Sn)AVALANCHE RATED26 nsHalogen Free45ns32 ns56 ns80A20V40VNo
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-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~175°C TJTape & Reel (TR)OptiMOS™2006-Discontinued1 (Unlimited)2EAR99MOSFET (Metal Oxide)SINGLEGULL WING---R-PSSO-G21SINGLE WITH BUILT-IN DIODE190W TcENHANCEMENT MODEDRAINN-Channel8.8m Ω @ 50A, 10V4V @ 125μA2360pF @ 25V80A Tc80nC @ 10V55V10V±20V80A0.0088Ohm320A55V370 mJROHS3 Compliant--------------
-
-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~175°C TJTape & Reel (TR)OptiMOS™2010-Discontinued1 (Unlimited)2EAR99MOSFET (Metal Oxide)SINGLEGULL WING---R-PSSO-G21SINGLE WITH BUILT-IN DIODE158W TcENHANCEMENT MODEDRAINN-Channel10.7m Ω @ 60A, 10V2V @ 93μA2075pF @ 25V80A Tc80nC @ 10V55V4.5V 10V±20V80A0.0147Ohm320A55V280 mJROHS3 Compliant----LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE---------
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