Infineon Technologies IPB80N06S208ATMA2
- Part Number:
- IPB80N06S208ATMA2
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2489054-IPB80N06S208ATMA2
- Description:
- MOSFET N-CH 55V 80A TO263-3
- Datasheet:
- IPB80N06S208ATMA2
Infineon Technologies IPB80N06S208ATMA2 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPB80N06S208ATMA2.
- Factory Lead Time10 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesOptiMOS™
- Published2006
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max215W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Turn On Delay Time14 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs7.7m Ω @ 58A, 10V
- Vgs(th) (Max) @ Id4V @ 150μA
- Halogen FreeHalogen Free
- Input Capacitance (Ciss) (Max) @ Vds2860pF @ 25V
- Current - Continuous Drain (Id) @ 25°C80A Tc
- Gate Charge (Qg) (Max) @ Vgs96nC @ 10V
- Rise Time15ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)14 ns
- Turn-Off Delay Time32 ns
- Continuous Drain Current (ID)80A
- Gate to Source Voltage (Vgs)20V
- Max Dual Supply Voltage55V
- Drain-source On Resistance-Max0.0077Ohm
- Avalanche Energy Rating (Eas)450 mJ
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeContains Lead
IPB80N06S208ATMA2 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 450 mJ.A device's maximum input capacitance is 2860pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 80A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 32 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 55V, it supports maximum dual supply voltages.This device uses no drive voltage (10V) to reduce its overall power consumption.
IPB80N06S208ATMA2 Features
the avalanche energy rating (Eas) is 450 mJ
a continuous drain current (ID) of 80A
the turn-off delay time is 32 ns
IPB80N06S208ATMA2 Applications
There are a lot of Infineon Technologies
IPB80N06S208ATMA2 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 450 mJ.A device's maximum input capacitance is 2860pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 80A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 32 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 55V, it supports maximum dual supply voltages.This device uses no drive voltage (10V) to reduce its overall power consumption.
IPB80N06S208ATMA2 Features
the avalanche energy rating (Eas) is 450 mJ
a continuous drain current (ID) of 80A
the turn-off delay time is 32 ns
IPB80N06S208ATMA2 Applications
There are a lot of Infineon Technologies
IPB80N06S208ATMA2 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IPB80N06S208ATMA2 More Descriptions
55V, N-Ch, 7.7 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™, PG-TO263-3, RoHSInfineon SCT
Trans MOSFET N-CH 55V 80A Automotive 3-Pin(2 Tab) D2PAK T/R
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
Trans MOSFET N-CH 55V 80A Automotive 3-Pin(2 Tab) D2PAK T/R
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
The three parts on the right have similar specifications to IPB80N06S208ATMA2.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTechnologyTerminal PositionTerminal FormJESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdHalogen FreeInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Max Dual Supply VoltageDrain-source On Resistance-MaxAvalanche Energy Rating (Eas)Radiation HardeningRoHS StatusLead FreeSurface MountJESD-609 CodeTerminal FinishAdditional FeaturePeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Reference StandardDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Pulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinView Compare
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IPB80N06S208ATMA210 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3SILICON-55°C~175°C TJTape & Reel (TR)OptiMOS™2006yesActive1 (Unlimited)2EAR99MOSFET (Metal Oxide)SINGLEGULL WINGR-PSSO-G21SINGLE WITH BUILT-IN DIODE215W TcENHANCEMENT MODEDRAIN14 nsN-Channel7.7m Ω @ 58A, 10V4V @ 150μAHalogen Free2860pF @ 25V80A Tc96nC @ 10V15ns10V±20V14 ns32 ns80A20V55V0.0077Ohm450 mJNoROHS3 CompliantContains Lead-------------
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--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-55°C~175°C TJTape & Reel (TR)OptiMOS™2006-Obsolete1 (Unlimited)2EAR99MOSFET (Metal Oxide)SINGLEGULL WINGR-PSSO-G21SINGLE WITH BUILT-IN DIODE300W TcENHANCEMENT MODEDRAIN-N-Channel4.8m Ω @ 80A, 10V4V @ 250μA-5110pF @ 25V80A Tc170nC @ 10V-10V±20V-----0.0048Ohm810 mJ-RoHS Compliant-YESe3Tin (Sn)ULTRA-LOW RESISTANCENOT SPECIFIEDnot_compliantNOT SPECIFIEDAEC-Q10155V80A320A55V
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--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-55°C~175°C TJTape & Reel (TR)OptiMOS™2006-Discontinued1 (Unlimited)2EAR99MOSFET (Metal Oxide)SINGLEGULL WINGR-PSSO-G21SINGLE WITH BUILT-IN DIODE190W TcENHANCEMENT MODEDRAIN-N-Channel8.8m Ω @ 50A, 10V4V @ 125μA-2360pF @ 25V80A Tc80nC @ 10V-10V±20V-----0.0088Ohm370 mJ-ROHS3 Compliant-YES-------55V80A320A55V
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--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-55°C~175°C TJTape & Reel (TR)OptiMOS™2010-Discontinued1 (Unlimited)2EAR99MOSFET (Metal Oxide)SINGLEGULL WINGR-PSSO-G21SINGLE WITH BUILT-IN DIODE158W TcENHANCEMENT MODEDRAIN-N-Channel10.7m Ω @ 60A, 10V2V @ 93μA-2075pF @ 25V80A Tc80nC @ 10V-4.5V 10V±20V-----0.0147Ohm280 mJ-ROHS3 Compliant-YES--LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE----55V80A320A55V
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