Infineon Technologies IPB80N04S403ATMA1
- Part Number:
- IPB80N04S403ATMA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2484490-IPB80N04S403ATMA1
- Description:
- MOSFET N-CH 40V 80A TO263-3-2
- ECAD Model:
-
- Datasheet:
- IPB80N04S403ATMA1
Infineon Technologies IPB80N04S403ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPB80N04S403ATMA1.
- Factory Lead Time16 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesOptiMOS™
- Published2010
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max94W Tc
- Operating ModeENHANCEMENT MODE
- Turn On Delay Time14 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs3.3m Ω @ 80A, 10V
- Vgs(th) (Max) @ Id4V @ 53μA
- Halogen FreeHalogen Free
- Input Capacitance (Ciss) (Max) @ Vds5260pF @ 25V
- Current - Continuous Drain (Id) @ 25°C80A Tc
- Gate Charge (Qg) (Max) @ Vgs66nC @ 10V
- Rise Time12ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)16 ns
- Continuous Drain Current (ID)80A
- Gate to Source Voltage (Vgs)20V
- Max Dual Supply Voltage40V
- Avalanche Energy Rating (Eas)200 mJ
- RoHS StatusROHS3 Compliant
- Lead FreeContains Lead
IPB80N04S403ATMA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 200 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5260pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 14 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 40V.In addition to reducing power consumption, this device uses drive voltage (10V).
IPB80N04S403ATMA1 Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 80A
IPB80N04S403ATMA1 Applications
There are a lot of Infineon Technologies
IPB80N04S403ATMA1 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 200 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5260pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 14 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 40V.In addition to reducing power consumption, this device uses drive voltage (10V).
IPB80N04S403ATMA1 Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 80A
IPB80N04S403ATMA1 Applications
There are a lot of Infineon Technologies
IPB80N04S403ATMA1 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
IPB80N04S403ATMA1 More Descriptions
Trans MOSFET N-CH 40V 80A Automotive 3-Pin(2 Tab) D2PAK T/R / OptiMOS-T2 Power-Transistor
N-Channel 40 V 80 A 3.3 mOhm Surface Mount Power Transistor - TO263-3-2
MOSFET, AEC-Q101, N-CH, 40V, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0032ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 94W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS-T2 Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Power Field-Effect Transistor, 80A I(D), 40V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 40V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T2 40V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, electric pumps, etc. especially in combination with PWM control.; Thus OptiMOS-T2 40V products based on Infineons advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.
N-Channel 40 V 80 A 3.3 mOhm Surface Mount Power Transistor - TO263-3-2
MOSFET, AEC-Q101, N-CH, 40V, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0032ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 94W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS-T2 Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Power Field-Effect Transistor, 80A I(D), 40V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 40V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T2 40V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, electric pumps, etc. especially in combination with PWM control.; Thus OptiMOS-T2 40V products based on Infineons advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.
The three parts on the right have similar specifications to IPB80N04S403ATMA1.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdHalogen FreeInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Continuous Drain Current (ID)Gate to Source Voltage (Vgs)Max Dual Supply VoltageAvalanche Energy Rating (Eas)RoHS StatusLead FreeSurface MountAdditional FeatureReference StandardCase ConnectionDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinView Compare
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IPB80N04S403ATMA116 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3SILICON-55°C~175°C TJTape & Reel (TR)OptiMOS™2010e3Active1 (Unlimited)2EAR99Tin (Sn)MOSFET (Metal Oxide)SINGLEGULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PSSO-G21SINGLE WITH BUILT-IN DIODE94W TcENHANCEMENT MODE14 nsN-Channel3.3m Ω @ 80A, 10V4V @ 53μAHalogen Free5260pF @ 25V80A Tc66nC @ 10V12ns10V±20V16 ns80A20V40V200 mJROHS3 CompliantContains Lead---------- -
--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-55°C~175°C TJTape & Reel (TR)OptiMOS™2006e3Obsolete1 (Unlimited)2EAR99Tin (Sn)MOSFET (Metal Oxide)SINGLEGULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PSSO-G21SINGLE WITH BUILT-IN DIODE300W TcENHANCEMENT MODE-N-Channel4.8m Ω @ 80A, 10V4V @ 250μA-5110pF @ 25V80A Tc170nC @ 10V-10V±20V----810 mJRoHS Compliant-YESULTRA-LOW RESISTANCEAEC-Q101DRAIN55V80A0.0048Ohm320A55V
-
--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-55°C~175°C TJTape & Reel (TR)OptiMOS™2006-Discontinued1 (Unlimited)2EAR99-MOSFET (Metal Oxide)SINGLEGULL WING---R-PSSO-G21SINGLE WITH BUILT-IN DIODE190W TcENHANCEMENT MODE-N-Channel8.2m Ω @ 52A, 10V2V @ 125μA-2620pF @ 25V80A Tc105nC @ 10V-4.5V 10V±20V----370 mJROHS3 Compliant-YESLOGIC LEVEL COMPATIBLE-DRAIN55V80A0.011Ohm320A55V
-
--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-55°C~175°C TJTape & Reel (TR)OptiMOS™2010-Discontinued1 (Unlimited)2EAR99-MOSFET (Metal Oxide)SINGLEGULL WING---R-PSSO-G21SINGLE WITH BUILT-IN DIODE158W TcENHANCEMENT MODE-N-Channel10.7m Ω @ 60A, 10V2V @ 93μA-2075pF @ 25V80A Tc80nC @ 10V-4.5V 10V±20V----280 mJROHS3 Compliant-YESLOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE-DRAIN55V80A0.0147Ohm320A55V
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