Infineon Technologies IPB80N04S303ATMA1

Name: IPB80N04S303ATMA1
Brand: Infineon Technologies
SKU: 2482785-IPB80N04S303ATMA1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPB80N04S303ATMA1

Manufacturer:: Infineon Technologies

Ventron No:: 2482785-IPB80N04S303ATMA1

Description:: MOSFET N-CH 40V 80A TO263-3

ECAD Model:

Datasheet:: IPx80N04S3-03

Specifications

Infineon Technologies IPB80N04S303ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPB80N04S303ATMA1.

Factory Lead Time
12 Weeks
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
OptiMOS™
Published
2007
JESD-609 Code
e3
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
ULTRA LOW RESISTANCE
HTS Code
8541.29.00.95
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
188W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
3.2m Ω @ 80A, 10V
Vgs(th) (Max) @ Id
4V @ 120μA
Input Capacitance (Ciss) (Max) @ Vds
7300pF @ 25V
Current - Continuous Drain (Id) @ 25°C
80A Tc
Gate Charge (Qg) (Max) @ Vgs
110nC @ 10V
Drain to Source Voltage (Vdss)
40V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
80A
Drain-source On Resistance-Max
0.0035Ohm
Pulsed Drain Current-Max (IDM)
320A
DS Breakdown Voltage-Min
40V
Avalanche Energy Rating (Eas)
526 mJ
RoHS Status
ROHS3 Compliant

Description

IPB80N04S303ATMA1 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 526 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 7300pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 80A.Peak drain current is 320A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 40V.For this transistor to work, a voltage 40V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IPB80N04S303ATMA1 Features
the avalanche energy rating (Eas) is 526 mJ
based on its rated peak drain current 320A.
a 40V drain to source voltage (Vdss)

IPB80N04S303ATMA1 Applications
There are a lot of Infineon Technologies
IPB80N04S303ATMA1 applications of single MOSFETs transistors.

AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies

IPB80N04S303ATMA1 More Descriptions

40V, N-Ch, 3.2 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T, PG-TO263-3, RoHSInfineon SCT
Trans MOSFET N-CH 40V 80A Automotive 3-Pin(2 Tab) D2PAK T/R
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (RoHS compliant); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 40V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T2 40V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, electric pumps, etc. especially in combination with PWM control.; Thus OptiMOS-T2 40V products based on Infineons advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.

Product Comparison

The three parts on the right have similar specifications to IPB80N04S303ATMA1.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

HTS Code

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Mount

Pbfree Code

Halogen Free

Continuous Drain Current (ID)

Max Dual Supply Voltage

Lead Free

Subcategory

Pin Count

Qualification Status

View Compare
IPB80N04S303ATMA1

Infineon Technologies

12 Weeks

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2007

e3

Not For New Designs

1 (Unlimited)

2

EAR99

Tin (Sn)

ULTRA LOW RESISTANCE

8541.29.00.95

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

not_compliant

NOT SPECIFIED

R-PSSO-G2

1

SINGLE WITH BUILT-IN DIODE

188W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

3.2m Ω @ 80A, 10V

4V @ 120μA

7300pF @ 25V

80A Tc

110nC @ 10V

40V

10V

±20V

80A

0.0035Ohm

320A

40V

526 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-
IPB80N08S406ATMA1

Infineon Technologies

14 Weeks

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

Automotive, AEC-Q101, OptiMOS™

2013

e3

Obsolete

1 (Unlimited)

2

-

Tin (Sn)

-

-

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

not_compliant

NOT SPECIFIED

R-PSSO-G2

1

SINGLE WITH BUILT-IN DIODE

150W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

5.5m Ω @ 80A, 10V

4V @ 90μA

4800pF @ 25V

80A Tc

70nC @ 10V

-

10V

±20V

-

0.0047Ohm

320A

-

270 mJ

ROHS3 Compliant

Surface Mount

yes

Halogen Free

80A

80V

Contains Lead

-

-

-

IPB80N04S303ATMA1 vs IPB80N08S406ATMA1
IPB80N06S2L-H5

Infineon Technologies

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2006

e3

Obsolete

1 (Unlimited)

2

EAR99

Matte Tin (Sn)

LOGIC LEVEL COMPATIBLE

-

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

compliant

NOT SPECIFIED

R-PSSO-G2

1

SINGLE WITH BUILT-IN DIODE

300W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

4.7m Ω @ 80A, 10V

2V @ 250μA

5000pF @ 25V

80A Tc

190nC @ 10V

55V

4.5V 10V

±20V

80A

0.0062Ohm

320A

55V

700 mJ

RoHS Compliant

-

yes

-

-

-

-

FET General Purpose Power

4

Not Qualified

IPB80N04S303ATMA1 vs IPB80N06S2L-H5
IPB80N06S209ATMA1

Infineon Technologies

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2006

-

Discontinued

1 (Unlimited)

2

EAR99

-

-

-

MOSFET (Metal Oxide)

SINGLE

GULL WING

-

-

-

R-PSSO-G2

1

SINGLE WITH BUILT-IN DIODE

190W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

8.8m Ω @ 50A, 10V

4V @ 125μA

2360pF @ 25V

80A Tc

80nC @ 10V

55V

10V

±20V

80A

0.0088Ohm

320A

55V

370 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

IPB80N04S303ATMA1 vs IPB80N06S209ATMA1

Certification

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Part Number	Manufacturers	Description	Stock	Price
IPB80N04S303ATMA1 DISTI #V36:1790_06383836	Infineon Technologies AG	Trans MOSFET N-CH 40V 80A Automotive 3-Pin(2 Tab) RoHS: Compliant	0	1000 $1.177 10000 $1.162 100000 $1.067 500000 $1.001 1000000 $0.9997
IPB80N04S303ATMA1 DISTI #IPB80N04S303ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 40V 80A TO263-3 RoHS: Compliant	594	1 $2.47 10 $2.215 100 $1.7807 500 $1.463
IPB80N04S303ATMA1 DISTI #IPB80N04S303ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 40V 80A TO263-3 RoHS: Compliant	0	1000 $1.30661
IPB80N04S303ATMA1 DISTI #IPB80N04S303ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 40V 80A TO263-3 RoHS: Compliant	0
IPB80N04S303ATMA1 DISTI #IPB80N04S303ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 40V 80A 3-Pin(2 Tab) TO-263 - Ta RoHS: Compliant	0	1000 $1.2359 2000 $1.1909 4000 $1.1479 6000 $1.1099 10000 $1.0899
IPB80N04S303ATMA1 DISTI #IPB80N04S303ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 40V 80A 3-Pin(2 Tab) TO-263 - Bu RoHS: Compliant	0	379 $0.9509 758 $0.9159 1137 $0.8829 1895 $0.8529 3790 $0.8379
IPB80N04S303ATMA1 DISTI #SP000260848	Infineon Technologies AG	Trans MOSFET N-CH 40V 80A 3-Pin(2 Tab) TO-263 (Alt RoHS: Compliant	0	1000 $1.4589 2000 $1.2149 4000 $1.1219 6000 $1.0419 10000 $0.9719
IPB80N04S3-03 DISTI #726-IPB80N04S3-03	Infineon Technologies AG	MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T RoHS: Compliant	0
IPB80N04S303ATMA1 DISTI #N/A	Infineon Technologies AG	MOSFET N-CHANNEL_30/40V	0
IPB80N04S303ATMA1 DISTI #	Infineon Technologies AG	Infineon N-Channel Automotive MOSFET IPB80N04S3-0 RoHS: Not Compliant	1000	1 $1.07 25 $0.99 100 $0.95 500 $0.91 1000 $0.87

Infineon Technologies IPB80N04S303ATMA1

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