Infineon Technologies IPB80N04S3-06

Name: IPB80N04S3-06
Brand: Infineon Technologies
SKU: 2487522-IPB80N04S3-06
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPB80N04S3-06

Manufacturer:: Infineon Technologies

Ventron No:: 2487522-IPB80N04S3-06

Description:: MOSFET N-CH 40V 80A TO263-3

ECAD Model:

Datasheet:: IPB80N04S3-06

Specifications

Infineon Technologies IPB80N04S3-06 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPB80N04S3-06.

Package / Case
PG-TO263-3
Packaging
Tape & Reel (TR)
RoHS Status
RoHS Compliant

Description

IPB80N04S3-06 Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IPB80N04S3-06 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IPB80N04S3-06. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

Product Comparison

The three parts on the right have similar specifications to IPB80N04S3-06.

Image

Part Number

Manufacturer

Package / Case

Packaging

RoHS Status

Mounting Type

Surface Mount

Transistor Element Material

Operating Temperature

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Reference Standard

JESD-30 Code

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

View Compare
IPB80N04S3-06

Infineon Technologies

PG-TO263-3

Tape & Reel (TR)

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IPB80N06S205ATMA1

Infineon Technologies

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

Tape & Reel (TR)

RoHS Compliant

Surface Mount

YES

SILICON

-55°C~175°C TJ

OptiMOS™

2006

e3

Obsolete

1 (Unlimited)

2

EAR99

Tin (Sn)

ULTRA-LOW RESISTANCE

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

not_compliant

NOT SPECIFIED

AEC-Q101

R-PSSO-G2

1

SINGLE WITH BUILT-IN DIODE

300W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

4.8m Ω @ 80A, 10V

4V @ 250μA

5110pF @ 25V

80A Tc

170nC @ 10V

55V

10V

±20V

80A

0.0048Ohm

320A

55V

810 mJ

IPB80N04S3-06 vs IPB80N06S205ATMA1
IPB80N06S209ATMA1

Infineon Technologies

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

Tape & Reel (TR)

ROHS3 Compliant

Surface Mount

YES

SILICON

-55°C~175°C TJ

OptiMOS™

2006

-

Discontinued

1 (Unlimited)

2

EAR99

-

-

MOSFET (Metal Oxide)

SINGLE

GULL WING

-

-

-

-

R-PSSO-G2

1

SINGLE WITH BUILT-IN DIODE

190W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

8.8m Ω @ 50A, 10V

4V @ 125μA

2360pF @ 25V

80A Tc

80nC @ 10V

55V

10V

±20V

80A

0.0088Ohm

320A

55V

370 mJ

IPB80N04S3-06 vs IPB80N06S209ATMA1
IPB80N06S2L11ATMA1

Infineon Technologies

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

Tape & Reel (TR)

ROHS3 Compliant

Surface Mount

YES

SILICON

-55°C~175°C TJ

OptiMOS™

2010

-

Discontinued

1 (Unlimited)

2

EAR99

-

LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

MOSFET (Metal Oxide)

SINGLE

GULL WING

-

-

-

-

R-PSSO-G2

1

SINGLE WITH BUILT-IN DIODE

158W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

10.7m Ω @ 60A, 10V

2V @ 93μA

2075pF @ 25V

80A Tc

80nC @ 10V

55V

4.5V 10V

±20V

80A

0.0147Ohm

320A

55V

280 mJ

IPB80N04S3-06 vs IPB80N06S2L11ATMA1