Infineon Technologies IPB80N04S204ATMA1

IPB80N04S204ATMA1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 810 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 5300pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 80A.Pulsed drain current is maximum rated peak drain current 320A.A normal operation of the DS requires keeping the breakdown voltage above 40V.This transistor requires a drain-source voltage (Vdss) of 40V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IPB80N04S204ATMA1 Features
the avalanche energy rating (Eas) is 810 mJ
based on its rated peak drain current 320A.
a 40V drain to source voltage (Vdss)


IPB80N04S204ATMA1 Applications
There are a lot of Infineon Technologies
IPB80N04S204ATMA1 applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching