Infineon Technologies IPB65R660CFD
- Part Number:
- IPB65R660CFD
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2479645-IPB65R660CFD
- Description:
- MOSFET N-CH 650V 6A TO263
- Datasheet:
- IPB65R660CFD
Infineon Technologies IPB65R660CFD technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPB65R660CFD.
- Vgs(th) (Max) @ Id:4.5V @ 200µA
- Vgs (Max):±20V
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PG-TO263
- Series:CoolMOS™
- Rds On (Max) @ Id, Vgs:660 mOhm @ 2.1A, 10V
- Power Dissipation (Max):62.5W (Tc)
- Packaging:Tape & Reel (TR)
- Package / Case:TO-263-3, D²Pak (2 Leads Tab), TO-263AB
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds:615pF @ 100V
- Gate Charge (Qg) (Max) @ Vgs:22nC @ 10V
- FET Type:N-Channel
- FET Feature:-
- Drive Voltage (Max Rds On, Min Rds On):10V
- Drain to Source Voltage (Vdss):650V
- Current - Continuous Drain (Id) @ 25°C:6A (Tc)
We can supply International Rectifier (Infineon Technologies) IPB65R660CFD, use the request quote form to request IPB65R660CFD pirce, International Rectifier (Infineon Technologies) Datasheet PDF and lead time.ventronchip.com is a professional electronic components distributor. With 3 Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IPB65R660CFD.The price and lead time for IPB65R660CFD depending on the quantity required, availability and warehouse location.
IPB65R660CFD More Descriptions
Power MOSFET, N Channel, 6 A, 650 V, 0.594 ohm, 10 V, 4 V
MOSFET, N-CH, 650V, 6A, TO-263-3
OEMs, CMs ONLY (NO BROKERS)
Contact for details
MOSFET, N-CH, 650V, 6A, TO-263-3
OEMs, CMs ONLY (NO BROKERS)
Contact for details
The three parts on the right have similar specifications to IPB65R660CFD.
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ImagePart NumberManufacturerVgs(th) (Max) @ Id:Vgs (Max):Technology:Supplier Device Package:Series:Rds On (Max) @ Id, Vgs:Power Dissipation (Max):Packaging:Package / Case:Operating Temperature:Mounting Type:Input Capacitance (Ciss) (Max) @ Vds:Gate Charge (Qg) (Max) @ Vgs:FET Type:FET Feature:Drive Voltage (Max Rds On, Min Rds On):Drain to Source Voltage (Vdss):Current - Continuous Drain (Id) @ 25°C:Package / CasePackagingFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdDrain to Source Voltage (Vdss)Continuous Drain Current (Id) @ 25°CPower Dissipation-Max (Ta=25°C)RoHS StatusView Compare
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IPB65R660CFD4.5V @ 200µA±20VMOSFET (Metal Oxide)PG-TO263CoolMOS™660 mOhm @ 2.1A, 10V62.5W (Tc)Tape & Reel (TR)TO-263-3, D²Pak (2 Leads Tab), TO-263AB-55°C ~ 150°C (TJ)Surface Mount615pF @ 100V22nC @ 10VN-Channel-10V650V6A (Tc)----------
-
3.5V @ 130µA±20VMOSFET (Metal Oxide)PG-TO263-2CoolMOS™950 mOhm @ 1.5A, 10V37W (Tc)Tape & Reel (TR)TO-263-3, D²Pak (2 Leads Tab), TO-263AB-55°C ~ 150°C (TJ)Surface Mount280pF @ 100V13nC @ 10VN-Channel-10V600V4.4A (Tc)---------
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------------------TO-263Tape & Reel (TR)N Channel99mΩ @ 18.1A,10V3.5V @ 1.21mA600V37.9A Tc278W TcRoHS Compliant
-
3.5V @ 440µA-MOSFET (Metal Oxide)PG-TO263-3-2CoolMOS™299 mOhm @ 6.6A, 10V96W (Tc)Tape & Reel (TR)TO-263-3, D²Pak (2 Leads Tab), TO-263AB-55°C ~ 150°C (TJ)Surface Mount1100pF @ 100V29nC @ 10VN-Channel--600V11A (Tc)---------
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