IPB60R299CP

Infineon Technologies IPB60R299CP

Part Number:
IPB60R299CP
Manufacturer:
Infineon Technologies
Ventron No:
2851878-IPB60R299CP
Description:
MOSFET N-CH 600V 11A TO-263
ECAD Model:
Datasheet:
IPB60R299CP

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Specifications
Infineon Technologies IPB60R299CP technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPB60R299CP.
  • Vgs(th) (Max) @ Id:
    3.5V @ 440µA
  • Technology:
    MOSFET (Metal Oxide)
  • Supplier Device Package:
    PG-TO263-3-2
  • Series:
    CoolMOS™
  • Rds On (Max) @ Id, Vgs:
    299 mOhm @ 6.6A, 10V
  • Power Dissipation (Max):
    96W (Tc)
  • Packaging:
    Tape & Reel (TR)
  • Package / Case:
    TO-263-3, D²Pak (2 Leads Tab), TO-263AB
  • Operating Temperature:
    -55°C ~ 150°C (TJ)
  • Mounting Type:
    Surface Mount
  • Input Capacitance (Ciss) (Max) @ Vds:
    1100pF @ 100V
  • Gate Charge (Qg) (Max) @ Vgs:
    29nC @ 10V
  • FET Type:
    N-Channel
  • FET Feature:
    -
  • Drain to Source Voltage (Vdss):
    600V
  • Current - Continuous Drain (Id) @ 25°C:
    11A (Tc)
Description
Images are for reference only.See Product Specifications for product details.If you are interested to buy International Rectifier (Infineon Technologies) IPB60R299CP.
IPB60R299CP More Descriptions
Trans MOSFET N-CH 600V 11A Automotive 3-Pin(2 Tab) D2PAK T/R
POWER FIELD-EFFECT TRANSISTOR, 11A I(D), 600V, 0.299OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
MOSFET, N, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.27ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation P
Product Comparison
The three parts on the right have similar specifications to IPB60R299CP.
  • Image
    Part Number
    Manufacturer
    Vgs(th) (Max) @ Id:
    Technology:
    Supplier Device Package:
    Series:
    Rds On (Max) @ Id, Vgs:
    Power Dissipation (Max):
    Packaging:
    Package / Case:
    Operating Temperature:
    Mounting Type:
    Input Capacitance (Ciss) (Max) @ Vds:
    Gate Charge (Qg) (Max) @ Vgs:
    FET Type:
    FET Feature:
    Drain to Source Voltage (Vdss):
    Current - Continuous Drain (Id) @ 25°C:
    Factory Lead Time
    Mounting Type
    Package / Case
    Supplier Device Package
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Number of Channels
    Power Dissipation-Max
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Max Junction Temperature (Tj)
    Drain to Source Resistance
    Height
    RoHS Status
    Continuous Drain Current (Id) @ 25°C
    Power Dissipation-Max (Ta=25°C)
    Mount
    Transistor Element Material
    JESD-609 Code
    Pbfree Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Terminal Position
    Terminal Form
    Reach Compliance Code
    JESD-30 Code
    Number of Elements
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Halogen Free
    Max Dual Supply Voltage
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Lead Free
    View Compare
  • IPB60R299CP
    IPB60R299CP
    3.5V @ 440µA
    MOSFET (Metal Oxide)
    PG-TO263-3-2
    CoolMOS™
    299 mOhm @ 6.6A, 10V
    96W (Tc)
    Tape & Reel (TR)
    TO-263-3, D²Pak (2 Leads Tab), TO-263AB
    -55°C ~ 150°C (TJ)
    Surface Mount
    1100pF @ 100V
    29nC @ 10V
    N-Channel
    -
    600V
    11A (Tc)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IPB60R040C7ATMA1
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    18 Weeks
    Surface Mount
    TO-263-4, D2Pak (3 Leads Tab), TO-263AA
    PG-TO263-3
    -55°C~150°C TJ
    Tape & Reel (TR)
    CoolMOS™ C7
    2014
    Active
    1 (Unlimited)
    150°C
    -55°C
    MOSFET (Metal Oxide)
    1
    227W Tc
    227W
    18.5 ns
    N-Channel
    40mOhm @ 24.9A, 10V
    4V @ 1.24mA
    4340pF @ 400V
    50A Tc
    107nC @ 10V
    650V
    10V
    ±20V
    81 ns
    50A
    20V
    600V
    150°C
    34mOhm
    4.5mm
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IPB60R099C6
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    TO-263
    -
    -
    Tape & Reel (TR)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    N Channel
    99mΩ @ 18.1A,10V
    3.5V @ 1.21mA
    -
    -
    -
    600V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    37.9A Tc
    278W Tc
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IPB60R160P6ATMA1
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    12 Weeks
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    CoolMOS™ P6
    2008
    Not For New Designs
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    176W Tc
    -
    -
    N-Channel
    160m Ω @ 9A, 10V
    4.5V @ 750μA
    2080pF @ 100V
    23.8A Tc
    44nC @ 10V
    -
    10V
    ±20V
    -
    23.8A
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    Surface Mount
    SILICON
    e3
    yes
    2
    EAR99
    Tin (Sn)
    SINGLE
    GULL WING
    not_compliant
    R-PSSO-G2
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    Halogen Free
    600V
    0.16Ohm
    68A
    497 mJ
    Contains Lead
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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