Infineon Technologies IPB60R299CP
- Part Number:
- IPB60R299CP
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2851878-IPB60R299CP
- Description:
- MOSFET N-CH 600V 11A TO-263
- Datasheet:
- IPB60R299CP
Infineon Technologies IPB60R299CP technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPB60R299CP.
- Vgs(th) (Max) @ Id:3.5V @ 440µA
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PG-TO263-3-2
- Series:CoolMOS™
- Rds On (Max) @ Id, Vgs:299 mOhm @ 6.6A, 10V
- Power Dissipation (Max):96W (Tc)
- Packaging:Tape & Reel (TR)
- Package / Case:TO-263-3, D²Pak (2 Leads Tab), TO-263AB
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds:1100pF @ 100V
- Gate Charge (Qg) (Max) @ Vgs:29nC @ 10V
- FET Type:N-Channel
- FET Feature:-
- Drain to Source Voltage (Vdss):600V
- Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Images are for reference only.See Product Specifications for product details.If you are interested to buy International Rectifier (Infineon Technologies) IPB60R299CP.
IPB60R299CP More Descriptions
Trans MOSFET N-CH 600V 11A Automotive 3-Pin(2 Tab) D2PAK T/R
POWER FIELD-EFFECT TRANSISTOR, 11A I(D), 600V, 0.299OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
MOSFET, N, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.27ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation P
POWER FIELD-EFFECT TRANSISTOR, 11A I(D), 600V, 0.299OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
MOSFET, N, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.27ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation P
The three parts on the right have similar specifications to IPB60R299CP.
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ImagePart NumberManufacturerVgs(th) (Max) @ Id:Technology:Supplier Device Package:Series:Rds On (Max) @ Id, Vgs:Power Dissipation (Max):Packaging:Package / Case:Operating Temperature:Mounting Type:Input Capacitance (Ciss) (Max) @ Vds:Gate Charge (Qg) (Max) @ Vgs:FET Type:FET Feature:Drain to Source Voltage (Vdss):Current - Continuous Drain (Id) @ 25°C:Factory Lead TimeMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureTechnologyNumber of ChannelsPower Dissipation-MaxPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageMax Junction Temperature (Tj)Drain to Source ResistanceHeightRoHS StatusContinuous Drain Current (Id) @ 25°CPower Dissipation-Max (Ta=25°C)MountTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeTerminal FinishTerminal PositionTerminal FormReach Compliance CodeJESD-30 CodeNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationHalogen FreeMax Dual Supply VoltageDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Lead FreeView Compare
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IPB60R299CP3.5V @ 440µAMOSFET (Metal Oxide)PG-TO263-3-2CoolMOS™299 mOhm @ 6.6A, 10V96W (Tc)Tape & Reel (TR)TO-263-3, D²Pak (2 Leads Tab), TO-263AB-55°C ~ 150°C (TJ)Surface Mount1100pF @ 100V29nC @ 10VN-Channel-600V11A (Tc)-----------------------------------------------------------
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----------------18 WeeksSurface MountTO-263-4, D2Pak (3 Leads Tab), TO-263AAPG-TO263-3-55°C~150°C TJTape & Reel (TR)CoolMOS™ C72014Active1 (Unlimited)150°C-55°CMOSFET (Metal Oxide)1227W Tc227W18.5 nsN-Channel40mOhm @ 24.9A, 10V4V @ 1.24mA4340pF @ 400V50A Tc107nC @ 10V650V10V±20V81 ns50A20V600V150°C34mOhm4.5mmROHS3 Compliant------------------------
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------------------TO-263--Tape & Reel (TR)-----------N Channel99mΩ @ 18.1A,10V3.5V @ 1.21mA---600V---------RoHS Compliant37.9A Tc278W Tc----------------------
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----------------12 WeeksSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB--55°C~150°C TJTape & Reel (TR)CoolMOS™ P62008Not For New Designs1 (Unlimited)--MOSFET (Metal Oxide)-176W Tc--N-Channel160m Ω @ 9A, 10V4.5V @ 750μA2080pF @ 100V23.8A Tc44nC @ 10V-10V±20V-23.8A-----ROHS3 Compliant--Surface MountSILICONe3yes2EAR99Tin (Sn)SINGLEGULL WINGnot_compliantR-PSSO-G21SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHINGHalogen Free600V0.16Ohm68A497 mJContains Lead
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