Infineon Technologies IPB65R310CFD

Name: IPB65R310CFD
Brand: Infineon Technologies
SKU: 2479804-IPB65R310CFD
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPB65R310CFD

Manufacturer:: Infineon Technologies

Ventron No:: 2479804-IPB65R310CFD

Description:: MOSFET N-CH 650V 11.4A TO263

ECAD Model:

Datasheet:: IPB65R310CFD

Specifications

Infineon Technologies IPB65R310CFD technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPB65R310CFD.

Vgs(th) (Max) @ Id:
4.5V @ 400µA
Vgs (Max):
±20V
Technology:
MOSFET (Metal Oxide)
Supplier Device Package:
PG-TO263
Series:
CoolMOS™
Rds On (Max) @ Id, Vgs:
310 mOhm @ 4.4A, 10V
Power Dissipation (Max):
104.2W (Tc)
Packaging:
Tape & Reel (TR)
Package / Case:
TO-263-3, D²Pak (2 Leads Tab), TO-263AB
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:
1100pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:
41nC @ 10V
FET Type:
N-Channel
FET Feature:
-
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
650V
Current - Continuous Drain (Id) @ 25°C:
11.4A (Tc)

Description

part No. IPB65R310CFD Is this available? : YesShipped from : HK warehouseSame model may have different manufacturers, images only for reference.

Product Comparison

The three parts on the right have similar specifications to IPB65R310CFD.

Image

Part Number

Manufacturer

Vgs(th) (Max) @ Id:

Vgs (Max):

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drive Voltage (Max Rds On, Min Rds On):

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Factory Lead Time

Mount

JESD-609 Code

Terminal Finish

Element Configuration

Power Dissipation

Turn On Delay Time

Halogen Free

Rise Time

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Drain to Source Breakdown Voltage

Lead Free

View Compare
IPB65R310CFD

Infineon Technologies

4.5V @ 400µA

±20V

MOSFET (Metal Oxide)

PG-TO263

CoolMOS™

310 mOhm @ 4.4A, 10V

104.2W (Tc)

Tape & Reel (TR)

TO-263-3, D²Pak (2 Leads Tab), TO-263AB

-55°C ~ 150°C (TJ)

Surface Mount

1100pF @ 100V

41nC @ 10V

N-Channel

-

10V

650V

11.4A (Tc)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IPB60R950C6

Infineon Technologies

3.5V @ 130µA

±20V

MOSFET (Metal Oxide)

PG-TO263-2

CoolMOS™

950 mOhm @ 1.5A, 10V

37W (Tc)

Tape & Reel (TR)

TO-263-3, D²Pak (2 Leads Tab), TO-263AB

-55°C ~ 150°C (TJ)

Surface Mount

280pF @ 100V

13nC @ 10V

N-Channel

-

10V

600V

4.4A (Tc)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IPB65R310CFD vs IPB60R950C6
IPB60R520CPATMA1

Infineon Technologies

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

CoolMOS™

2008

no

Obsolete

1 (Unlimited)

2

EAR99

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

compliant

NOT SPECIFIED

4

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

66W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

520m Ω @ 3.8A, 10V

3.5V @ 250μA

630pF @ 100V

6.8A Tc

31nC @ 10V

600V

10V

±20V

6.8A

0.52Ohm

17A

600V

166 mJ

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IPB65R310CFD vs IPB60R520CPATMA1
IPB60R299CPAATMA1

Infineon Technologies

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

SILICON

-40°C~150°C TJ

Tape & Reel (TR)

Automotive, AEC-Q101, CoolMOS™

2009

no

Active

1 (Unlimited)

2

-

MOSFET (Metal Oxide)

-

GULL WING

NOT SPECIFIED

not_compliant

NOT SPECIFIED

4

R-PSSO-G2

Not Qualified

1

-

96W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

299m Ω @ 6.6A, 10V

3.5V @ 440μA

1100pF @ 100V

11A Tc

29nC @ 10V

-

10V

±20V

-

0.299Ohm

34A

-

290 mJ

ROHS3 Compliant

18 Weeks

Surface Mount

e3

Tin (Sn)

Single

96W

10 ns

Halogen Free

5ns

40 ns

11A

20V

600V

600V

Contains Lead

IPB65R310CFD vs IPB60R299CPAATMA1