Infineon Technologies IPB60R190C6

Name: IPB60R190C6
Brand: Infineon Technologies
SKU: 2848849-IPB60R190C6
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPB60R190C6

Manufacturer:: Infineon Technologies

Ventron No:: 2848849-IPB60R190C6

Description:: MOSFET N-CH 600V 20.2A TO263

ECAD Model:

Datasheet:: IPB60R190C6

Specifications

Infineon Technologies IPB60R190C6 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPB60R190C6.

Package / Case
PG-TO263
Packaging
Tape & Reel (TR)
FET Type
N Channel
Rds On (Max) @ Id, Vgs
190mΩ @ 9.5A,10V
Vgs(th) (Max) @ Id
3.5V @ 630uA
Drain to Source Voltage (Vdss)
600V
Continuous Drain Current (Id) @ 25°C
20.2A Tc
Power Dissipation-Max (Ta=25°C)
151W Tc
RoHS Status
RoHS Compliant

Description

IPB60R190C6 Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IPB60R190C6 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IPB60R190C6. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

Product Comparison

The three parts on the right have similar specifications to IPB60R190C6.

Image

Part Number

Manufacturer

Package / Case

Packaging

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Drain to Source Voltage (Vdss)

Continuous Drain Current (Id) @ 25°C

Power Dissipation-Max (Ta=25°C)

RoHS Status

Factory Lead Time

Mounting Type

Supplier Device Package

Operating Temperature

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Max Operating Temperature

Min Operating Temperature

Technology

Number of Channels

Power Dissipation-Max

Power Dissipation

Turn On Delay Time

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Max Junction Temperature (Tj)

Drain to Source Resistance

Height

Mount

Number of Pins

Weight

Transistor Element Material

Pbfree Code

Number of Terminations

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Number of Elements

Element Configuration

Operating Mode

Case Connection

Transistor Application

Halogen Free

Rise Time

Fall Time (Typ)

Max Dual Supply Voltage

Drain-source On Resistance-Max

Avalanche Energy Rating (Eas)

Lead Free

JESD-609 Code

Terminal Finish

Qualification Status

Pulsed Drain Current-Max (IDM)

View Compare
IPB60R190C6

Infineon Technologies

PG-TO263

Tape & Reel (TR)

N Channel

190mΩ @ 9.5A,10V

3.5V @ 630uA

600V

20.2A Tc

151W Tc

RoHS Compliant

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IPB60R040C7ATMA1

Infineon Technologies

TO-263-4, D2Pak (3 Leads Tab), TO-263AA

Tape & Reel (TR)

N-Channel

40mOhm @ 24.9A, 10V

4V @ 1.24mA

650V

-

-

ROHS3 Compliant

18 Weeks

Surface Mount

PG-TO263-3

-55°C~150°C TJ

CoolMOS™ C7

2014

Active

1 (Unlimited)

150°C

-55°C

MOSFET (Metal Oxide)

1

227W Tc

227W

18.5 ns

4340pF @ 400V

50A Tc

107nC @ 10V

10V

±20V

81 ns

50A

20V

600V

150°C

34mOhm

4.5mm

-

-

-

-

-

-

-

-

-

-

-

-

-

-

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-

-

-

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-

-

-

-

-

-

-

-

IPB60R190C6 vs IPB60R040C7ATMA1
IPB65R280E6ATMA1

Infineon Technologies

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

Tape & Reel (TR)

N-Channel

280m Ω @ 4.4A, 10V

3.5V @ 440μA

-

-

-

ROHS3 Compliant

12 Weeks

Surface Mount

-

-55°C~150°C TJ

CoolMOS™ E6

2008

Discontinued

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

1

104W Tc

-

11 ns

950pF @ 100V

13.8A Tc

45nC @ 10V

10V

±20V

76 ns

13.8A

30V

650V

-

-

-

Surface Mount

3

1.946308g

SILICON

no

2

GULL WING

NOT SPECIFIED

not_compliant

NOT SPECIFIED

4

R-PSSO-G2

1

Single

ENHANCEMENT MODE

DRAIN

SWITCHING

Halogen Free

9ns

9 ns

650V

0.28Ohm

290 mJ

Contains Lead

-

-

-

-

IPB60R190C6 vs IPB65R280E6ATMA1
IPB60R299CPAATMA1

Infineon Technologies

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

Tape & Reel (TR)

N-Channel

299m Ω @ 6.6A, 10V

3.5V @ 440μA

-

-

-

ROHS3 Compliant

18 Weeks

Surface Mount

-

-40°C~150°C TJ

Automotive, AEC-Q101, CoolMOS™

2009

Active

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

96W Tc

96W

10 ns

1100pF @ 100V

11A Tc

29nC @ 10V

10V

±20V

40 ns

11A

20V

600V

-

-

-

Surface Mount

-

-

SILICON

no

2

GULL WING

NOT SPECIFIED

not_compliant

NOT SPECIFIED

4

R-PSSO-G2

1

Single

ENHANCEMENT MODE

DRAIN

SWITCHING

Halogen Free

5ns

-

600V

0.299Ohm

290 mJ

Contains Lead

e3

Tin (Sn)

Not Qualified

34A

IPB60R190C6 vs IPB60R299CPAATMA1