Infineon Technologies IPB60R160C6

Name: IPB60R160C6
Brand: Infineon Technologies
SKU: 2848966-IPB60R160C6
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPB60R160C6

Manufacturer:: Infineon Technologies

Ventron No:: 2848966-IPB60R160C6

Description:: MOSFET N-CH 600V 23.8A TO263

ECAD Model:

Datasheet:: IPB60R160C6

Specifications

Infineon Technologies IPB60R160C6 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPB60R160C6.

Package / Case
PG-TO263-3
Packaging
Tape & Reel (TR)
FET Type
N Channel
Rds On (Max) @ Id, Vgs
160mΩ @ 11.3A,10V
Vgs(th) (Max) @ Id
3.5V @ 750uA
Drain to Source Voltage (Vdss)
600V
Continuous Drain Current (Id) @ 25°C
23.8A Tc
Power Dissipation-Max (Ta=25°C)
176W Tc
RoHS Status
RoHS Compliant

Description

IPB60R160C6 Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IPB60R160C6 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IPB60R160C6. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

Product Comparison

The three parts on the right have similar specifications to IPB60R160C6.

Image

Part Number

Manufacturer

Package / Case

Packaging

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Drain to Source Voltage (Vdss)

Continuous Drain Current (Id) @ 25°C

Power Dissipation-Max (Ta=25°C)

RoHS Status

Vgs(th) (Max) @ Id:

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

Factory Lead Time

Mount

Mounting Type

Transistor Element Material

Operating Temperature

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Technology

Terminal Position

Terminal Form

Reach Compliance Code

JESD-30 Code

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

Transistor Application

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Max Dual Supply Voltage

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Lead Free

View Compare
IPB60R160C6

Infineon Technologies

PG-TO263-3

Tape & Reel (TR)

N Channel

160mΩ @ 11.3A,10V

3.5V @ 750uA

600V

23.8A Tc

176W Tc

RoHS Compliant

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IPB60R099C6

Infineon Technologies

TO-263

Tape & Reel (TR)

N Channel

99mΩ @ 18.1A,10V

3.5V @ 1.21mA

600V

37.9A Tc

278W Tc

RoHS Compliant

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IPB60R160C6 vs IPB60R099C6
IPB60R299CP

Infineon Technologies

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3.5V @ 440µA

MOSFET (Metal Oxide)

PG-TO263-3-2

CoolMOS™

299 mOhm @ 6.6A, 10V

96W (Tc)

Tape & Reel (TR)

TO-263-3, D²Pak (2 Leads Tab), TO-263AB

-55°C ~ 150°C (TJ)

Surface Mount

1100pF @ 100V

29nC @ 10V

N-Channel

-

600V

11A (Tc)

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IPB60R160C6 vs IPB60R299CP
IPB60R160P6ATMA1

Infineon Technologies

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

Tape & Reel (TR)

N-Channel

160m Ω @ 9A, 10V

4.5V @ 750μA

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ROHS3 Compliant

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12 Weeks

Surface Mount

Surface Mount

SILICON

-55°C~150°C TJ

CoolMOS™ P6

2008

e3

yes

Not For New Designs

1 (Unlimited)

2

EAR99

Tin (Sn)

MOSFET (Metal Oxide)

SINGLE

GULL WING

not_compliant

R-PSSO-G2

1

SINGLE WITH BUILT-IN DIODE

176W Tc

ENHANCEMENT MODE

DRAIN

SWITCHING

Halogen Free

2080pF @ 100V

23.8A Tc

44nC @ 10V

10V

±20V

23.8A

600V

0.16Ohm

68A

497 mJ

Contains Lead

IPB60R160C6 vs IPB60R160P6ATMA1