Infineon Technologies IPA90R500C3

IPA90R500C3 Overview
Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 11A.When VGS=900V, and ID flows to VDS at 900VVDS, the drain-source breakdown voltage is 900V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 400 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 24A.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 500mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 70 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 900V in order to operate.

IPA90R500C3 Features
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 400 ns
based on its rated peak drain current 24A.
single MOSFETs transistor is 500mOhm
a 900V drain to source voltage (Vdss)


IPA90R500C3 Applications
There are a lot of Infineon
IPA90R500C3 applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,