Infineon Technologies IPA086N10N3 G

Name: IPA086N10N3 G
Brand: Infineon Technologies
SKU: 2849011-IPA086N10N3 G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPA086N10N3 G

Manufacturer:: Infineon Technologies

Ventron No:: 2849011-IPA086N10N3 G

Description:: MOSFET N-CH 100V 45A TO220-FP

ECAD Model:

Datasheet:: IPA086N10N3 G

Specifications

Infineon Technologies IPA086N10N3 G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPA086N10N3 G.

Package / Case
PG-TO220-3
Packaging
Tube-packed
FET Type
N Channel
Rds On (Max) @ Id, Vgs
8.6mΩ @ 45A,10V
Vgs(th) (Max) @ Id
3.5V @ 75uA
Drain to Source Voltage (Vdss)
100V
Continuous Drain Current (Id) @ 25°C
45A Tc
Power Dissipation-Max (Ta=25°C)
37.5W Tc
RoHS Status
RoHS Compliant

Description

IPA086N10N3 G Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IPA086N10N3 G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IPA086N10N3 G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

Product Comparison

The three parts on the right have similar specifications to IPA086N10N3 G.

Image

Part Number

Manufacturer

Package / Case

Packaging

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Drain to Source Voltage (Vdss)

Continuous Drain Current (Id) @ 25°C

Power Dissipation-Max (Ta=25°C)

RoHS Status

Factory Lead Time

Mount

Mounting Type

Number of Pins

Transistor Element Material

Operating Temperature

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Technology

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

Transistor Application

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Lead Free

View Compare
IPA086N10N3 G

Infineon Technologies

PG-TO220-3

Tube-packed

N Channel

8.6mΩ @ 45A,10V

3.5V @ 75uA

100V

45A Tc

37.5W Tc

RoHS Compliant

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IPA045N10N3GXKSA1

Infineon Technologies

TO-220-3 Full Pack

Tube

N-Channel

4.5m Ω @ 64A, 10V

3.5V @ 150μA

-

-

-

ROHS3 Compliant

13 Weeks

Through Hole

Through Hole

3

SILICON

-55°C~175°C TJ

OptiMOS™

2005

e3

yes

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

MOSFET (Metal Oxide)

SINGLE

NOT SPECIFIED

NOT SPECIFIED

3

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

39W Tc

ENHANCEMENT MODE

39W

ISOLATED

25 ns

SWITCHING

Halogen Free

8410pF @ 50V

64A Tc

117nC @ 10V

47ns

6V 10V

±20V

15 ns

50 ns

64A

TO-220AB

20V

100V

0.0045Ohm

256A

540 mJ

Lead Free

IPA086N10N3 G vs IPA045N10N3GXKSA1
IPA032N06N3GXKSA1

Infineon Technologies

TO-220-3 Full Pack

Tube

N-Channel

3.2m Ω @ 80A, 10V

4V @ 118μA

-

-

-

ROHS3 Compliant

13 Weeks

Through Hole

Through Hole

3

SILICON

-55°C~175°C TJ

OptiMOS™

2008

e3

yes

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

MOSFET (Metal Oxide)

SINGLE

NOT SPECIFIED

NOT SPECIFIED

3

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

41W Tc

ENHANCEMENT MODE

41W

-

35 ns

SWITCHING

Halogen Free

13000pF @ 30V

84A Tc

165nC @ 10V

120ns

10V

±20V

20 ns

62 ns

84A

TO-220AB

20V

60V

-

-

-

Lead Free

IPA086N10N3 G vs IPA032N06N3GXKSA1
IPA037N08N3 G

Infineon Technologies

PG-TO220-3

Tube-packed

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RoHS Compliant

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IPA086N10N3 G vs IPA037N08N3 G

Certification

Related parts for IPA086N10N3 G

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IPA045N10N3GXKSA1

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IPA037N08N3 G

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IPA086N10N3 G Specification

Part Number	Manufacturers	Description	Stock	Price
IPA086N10N3GXKSA1 DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 100V 45A Automotive 3-Pin(3 Tab) RoHS: Compliant	380	1 $1.4532 10 $1.3367 100 $1.1031 500 $0.9086 1000 $0.7864
IPA086N10N3GXKSA1 DISTI #	Infineon Technologies AG	MOSFET N-CH 100V 45A TO220-FP RoHS: Compliant	1169	1 $1.83 10 $1.656 100 $1.3303 500 $1.03468 1000 $0.85731
IPA086N10N3GXKSA1 DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 100V 45A Automotive 3-Pin(3 Tab) RoHS: Compliant	380	11 $1.3367 100 $1.1031
IPA086N10N3 G DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 100V 45A 3-Pin(3 Tab) TO-220FP RoHS: Compliant	200	10 $1.5172 50 $1.2406 100 $1.1768 200 $1.1641
IPA086N10N3G DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 100V 45A 3-Pin TO-220FP Tube (Al RoHS: Compliant	500	500 $0.8469 1000 $0.8121 1500 $0.80112 2500 $0.76991 5000 $0.76004 12500 $0.74104 25000 $0.72296
IPA086N10N3GXKSA1 DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 100V 45A 3-Pin(3 Tab) TO-220FP ( RoHS: Compliant	1000	1 $1.0029 10 $0.7829 25 $0.6989 50 $0.6359 100 $0.6179 500 $0.6049 1000 $0.5959
IPA086N10N3GXKSA1 DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 100V 45A 3-Pin(3 Tab) TO-220FP - RoHS: Compliant	0	1000 $0.6189 2000 $0.5969 3000 $0.5749 5000 $0.5559 10000 $0.5459
IPA086N10N3GXKSA1 DISTI #	Infineon Technologies AG	MOSFET Transistor, N Channel, 45 A, 100 V, 0.0075	1211	1 $1.67 10 $1.5 100 $1.21 500 $0.993 1000 $0.823
IPA086N10N3 G DISTI #	Infineon Technologies AG	MOSFET N-Ch 100V 45A TO220FP-3 OptiMOS 3 RoHS: Compliant	1640	1 $1.59 10 $1.35 100 $1.08 500 $0.941 1000 $0.78
IPA086N10N3GXKSA1 DISTI #	Infineon Technologies AG	Single N-Channel 100 V 8.6 mOhm 42 nC OptiMOS Powe RoHS: Not Compliant	500	500 $0.96 1000 $0.815
IPA086N10N3 G DISTI #	Infineon Technologies AG	RoHS: Not Compliant	131	1 $0.84 25 $0.78 100 $0.75 500 $0.72 1000 $0.68
IPA086N10N3GXKSA1 DISTI #	Infineon Technologies AG	Power Field-Effect Transistor, 45A I(D), 100V, 0.0 RoHS: Compliant	100	1 $0.84 25 $0.78 100 $0.75 500 $0.72 1000 $0.68
IPA086N10N3GXKSA1 DISTI #	Infineon Technologies AG	MOSFET N-CHANNEL 100V 45A OPTIMOS TO220, TU	390	15 $0.98 30 $0.946 60 $0.914 120 $0.782
IPA086N10N3GXKSA1 DISTI #	Infineon Technologies AG	Transistor: N-MOSFET, unipolar, 100V, 45A, 37.	995	1 $1.292 3 $1.1118 10 $0.8935 100 $0.7763 1000 $0.7228
IPA086N10N3G DISTI #	Infineon Technologies AG	INSTOCK	126
IPA086N10N3GXKSA1 DISTI #	Infineon Technologies AG	RoHS: Compliant	720	500 $1.03 720 $0.9629
IPA086N10N3GXKSA1 DISTI #	Infineon Technologies AG	RoHS: Compliant	673	500 $1.92 673 $1.75
IPA086N10N3G DISTI #	Infineon Technologies AG	100V,8.6m,45A,N-Channel Power MOSFET	100	1 $1.24 100 $1.03 500 $0.91 1000 $0.89
IPA086N10N3GXKSA1 DISTI #	Infineon Technologies AG	MOSFET, N-CH, 100V, 45A, TO-220FP-3 RoHS: Compliant	1221	5 $1 25 $0.932 100 $0.798 250 $0.762 500 $0.726
IPA086N10N3 G DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 100V 45A Automotive 3-Pin(3 Tab) RoHS: Compliant	200	1 $2.07 10 $1.19 50 $0.973 100 $0.923 200 $0.913
IPA086N10N3GXKSA1 DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 100V 45A Automotive 3-Pin(3 Tab) RoHS: Compliant	380	10 $1.3367 100 $1.1031
IPA086N10N3GXKSA1 DISTI #	Infineon Technologies AG	MOSFET, N-CH, 100V, 45A, TO-220FP-3 RoHS: Compliant	1211	1 $2.52 10 $2.14 100 $1.72 500 $1.5 1000 $1.24 2500 $1.15 5000 $1.15

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Infineon Technologies IPA086N10N3 G

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