Infineon Technologies IKZ50N65NH5XKSA1

Trans IGBT Chip N-CH 650V 85A 273000mW 4-Pin(4 Tab) TO-247 Tube
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 4.1pF 50volts C0G /-0.25pF
To further enhance the best-in-class performance of the TRENCHSTOP™ 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin, PG-TO247-4, RoHSInfineon SCT
Igbt, Single, 650V, 85A, To-247; Dc Collector Current:85A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:273W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:4Pins; Rohs Compliant: Yes
To further enhance the best-in-class performance of the TRENCHSTOP 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control loop and brings TRENCHSTOP 5 IGBT to the next level of best in class switching performance. The standard TO-247 package body has been taken and an extra, 4th pin, has been added to enable the Kelvin emitter configuration. | Summary of Features: Extremely low control inductance loop; Emitter pin for driver feedback; Same creepage distance of collector emitter as standard TO-247 package; 20% reduction in total switching losses compared to TO-247 package using same technology | Benefits: System efficiency improvement compared to standard TO-247; Benefit increase at high current conditions; IGBTs operates under lower junction temperature; Much less power dissipation under overcurrent conditions | Target Applications: Uninterruptible power supply; Datacenters; Telecom Rectifiers; Photovoltaic Inverters; Server