Infineon Technologies IKW75N65ES5XKSA1

IKW75N65ES5: 650 V 80 A TRENCHSTOPTM 5 Soft Switching IGBT - PG-TO247-3
5 high Speed soft switching IGBT with full current rated RAPID 1 diode
Igbt, Single, 650V, 80A, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.42V; Power Dissipation Pd:395W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Infineon IKW75N65ES5XKSA1
The 650 V, 75 A hard-switching TRENCHSTOP™ 5 S5 IGBT in a TO247 package addresses applications switching between 10 kHz and 40 kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization, PG-TO247-3, RoHSInfineon SCT
TRENCHSTOP 5 S5 is the new IGBT family addressing applications switching between 10kHz and 40kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization. | Summary of Features: Very low V CE(sat) of 1.35V at 25C, 20% lower than TRENCHSTOP 5 H5; I C(n)=four times nominal current (100C T c); Soft current fall characteristics with no tail current; Symmetrical, low voltage overshoot; Gate voltage under control (no oscillation). No risk of unwanted turn-on of device and no need for gate clamping; Maximum junction temperature T vj=175C; Qualified according to JEDEC standards | Benefits: V CE(peak) clamping circuits not required; Suitable for use with single turn-on / turn-off gate resistor; No need for gate clamping components; Gate drivers with Miller clamping not required; Reduction in the EMI filtering needed; Excellent for paralleling | Target Applications: Storage; UPS; Welding; Solar; Charger