Infineon Technologies IKW40N60H3FKSA1

IKW40N60H3 Series 600 V 80 A Through Hole DuoPack IGBT TrenchStop™ - PG-TO-247-3
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 3.9pF 50volts C0G /-0.1pF
600 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHSInfineon SCT
IGBT DIODE,600V,40A,TO247; DC Collector Current:40A; Collector Emitter Voltage Vces:2.4V; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to 175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:306W
Infineons high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineons HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. | Summary of Features: Low switching losses for high efficiency; Excellent Vce(sat) behavior thanks to the famous Infineon TRENCHSTOP technology; Fast switching behavior with low EMI emissions; Optimized diode for target applications, meaning further improvement in switching losses; Low gate resistor selection possible (down to 5) whilst maintaining excellent switching behaviour; Short circuit capability 5s; Offering T j(max) of 175C; Packaged with and without freewheeling diode for increased design freedom | Benefits: Excellent cost/performance; Low switching and conduction losses; Very good EMI behavior; A small gate resistor for reduced delay time and voltage overshoot; Smaller die sizes -> smaller packages; Best-in-class IGBT efficiency and EMI behavior | Target Applications: Welding; Solar; UPS; All hard switching applications