Infineon Technologies IKW08T120FKSA1

Trans IGBT Chip N-CH 1.2KV 16A 3-Pin(3 Tab) TO-247
IGBT, N, 1200V, 8A, TO-247; Transistor Type:IGBT; DC Collector Current:16A; Collector Emitter Voltage Vces:2.2V; Power Dissipation Pd:70W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to 150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:8A; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:70W; Power Dissipation Pd:70W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
The 1200 V, 8 A hard-switching TRENCHSTOP™ IGBT3 co-packed with free-wheeling diode in a TO247 package, provides significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO247-3, RoHSInfineon SCT
Configuration = Single / Continuous Collector Current (Ic) A = 8 / Collector-Emitter Voltage (Vceo) kV = 1.2 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.7 / Emitter Leakage Current nA = 100 / Power Dissipation (Pd) W = 70 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 150 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop concept. The combination of IGBT with soft recovery Emitter Controled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled HE diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar inverters; Motor control; Major home appliances; Welding; Other hard switching applications