Infineon Technologies IKA08N65F5XKSA1
- Part Number:
- IKA08N65F5XKSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2854577-IKA08N65F5XKSA1
- Description:
- IGBT 650V 10.8A 31.2W TO220-3
- Datasheet:
- IKA08N65F5XKSA1
Infineon Technologies IKA08N65F5XKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IKA08N65F5XKSA1.
- Factory Lead Time14 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Operating Temperature-40°C~175°C TJ
- PackagingTube
- SeriesTrenchStop®
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation31.2W
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Element ConfigurationSingle
- Power Dissipation31.2W
- Input TypeStandard
- Halogen FreeHalogen Free
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)1.6V
- Max Collector Current10.8A
- Reverse Recovery Time41 ns
- Collector Emitter Breakdown Voltage650V
- Collector Emitter Saturation Voltage1.6V
- Test Condition400V, 4A, 48 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 8A
- Gate Charge22nC
- Current - Collector Pulsed (Icm)24A
- Td (on/off) @ 25°C10ns/116ns
- Switching Energy70μJ (on), 20μJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max4.8V
- REACH SVHCUnknown
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IKA08N65F5XKSA1 Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IKA08N65F5XKSA1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IKA08N65F5XKSA1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IKA08N65F5XKSA1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IKA08N65F5XKSA1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IKA08N65F5XKSA1 More Descriptions
Trans IGBT Chip N-CH 650V 10.8A 3-Pin(3 Tab) TO-220FP Tube
High Speed 650 V, 8 A hard-switching TRENCHSTOP™ IGBT5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT, PG-TO220-3, RoHSInfineon SCT
IGBT, 650V, 8A, TO220-3; DC Collector Current: 8A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 31.2W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-220; No. of Pins: 3Pins; O
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
High Speed 650 V, 8 A hard-switching TRENCHSTOP™ IGBT5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT, PG-TO220-3, RoHSInfineon SCT
IGBT, 650V, 8A, TO220-3; DC Collector Current: 8A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 31.2W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-220; No. of Pins: 3Pins; O
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
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