Infineon Technologies IGP30N60H3XKSA1

Trans IGBT Chip N-CH 600V 60A 187000mW 3-Pin(3 Tab) TO-220AB Tube
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-220AB
High speed 600 V, 30 A single TRENCHSTOP™ IGBT3 in a TO220 package provides the best compromise between switching and conduction losses, PG-TO220-3, RoHSInfineon SCT
IGBT,600V,30A,TO220; Transistor Type:IGBT; DC Collector Current:30A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:187W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to 175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:187W
Infineons high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineons HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. | Summary of Features: Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz; Low switching losses for high efficiency; Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP technology; Fast switching behavior with low EMI emissions; Optimized diode for target applications, meaning further improvement in switching losses; Low gate resistor selection possible (down to 5) whilst maintaining excellent switching behaviour; Short circuit capability; Offering T j(max) of 175C; Packaged with and without freewheeling diode for increased design freedom | Benefits: Excellent cost/performance; Low switching and conduction losses; Very good EMI behavior; A small gate resistor for reduced delay time and voltage overshoot; Smaller die sizes -> smaller packages; Best-in-class IGBT efficiency and EMI behavior | Target Applications: Welding Inverters; Solar Inverters; UPS; All hard switching applications