Fairchild/ON Semiconductor HUF75344P3

Name: HUF75344P3
Brand: Fairchild/ON Semiconductor
SKU: 3554362-HUF75344P3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: HUF75344P3

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3554362-HUF75344P3

Description:: MOSFET N-CH 55V 75A TO-220AB

ECAD Model:

Datasheet:: TO220B03 Pkg Drawing

Specifications

Fairchild/ON Semiconductor HUF75344P3 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor HUF75344P3.

Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
UltraFET™
JESD-609 Code
e0
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN LEAD
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
285W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
8m Ω @ 75A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3.2pF @ 25V
Current - Continuous Drain (Id) @ 25°C
75A Tc
Gate Charge (Qg) (Max) @ Vgs
210nC @ 20V
Drain to Source Voltage (Vdss)
55V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
JEDEC-95 Code
TO-220AB
Drain Current-Max (Abs) (ID)
75A
Drain-source On Resistance-Max
0.008Ohm
DS Breakdown Voltage-Min
55V
RoHS Status
Non-RoHS Compliant

Description

HUF75344P3 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3.2pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 75A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 55V in order to maintain normal operation.Operating this transistor requires a 55V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

HUF75344P3 Features
a 55V drain to source voltage (Vdss)

HUF75344P3 Applications
There are a lot of Rochester Electronics, LLC
HUF75344P3 applications of single MOSFETs transistors.

LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools

HUF75344P3 More Descriptions

N-Channel UltraFET® Power MOSFET 55V, 75A, 8mΩ
Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:75A; On Resistance, Rds(on):8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:3-TO-220AB ;RoHS Compliant: Yes
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75344.

Product Comparison

The three parts on the right have similar specifications to HUF75344P3.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

RoHS Status

Supplier Device Package

Published

Terminal Form

Reach Compliance Code

View Compare
HUF75344P3

Fairchild/ON Semiconductor

Through Hole

TO-220-3

NO

SILICON

-55°C~175°C TJ

Tube

UltraFET™

e0

yes

Obsolete

1 (Unlimited)

3

TIN LEAD

MOSFET (Metal Oxide)

SINGLE

NOT SPECIFIED

NOT SPECIFIED

3

R-PSFM-T3

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

285W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

8m Ω @ 75A, 10V

4V @ 250μA

3.2pF @ 25V

75A Tc

210nC @ 20V

55V

10V

±20V

TO-220AB

75A

0.008Ohm

55V

Non-RoHS Compliant

-

-

-

-

-
HUF75337P3

Fairchild/ON Semiconductor

Through Hole

TO-220-3

-

-

-55°C~175°C TJ

Tube

UltraFET™

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

175W Tc

-

-

N-Channel

-

14mOhm @ 75A, 10V

4V @ 250μA

1775pF @ 25V

75A Tc

109nC @ 20V

55V

10V

±20V

-

-

-

-

-

TO-220-3

2002

-

-

HUF75344P3 vs HUF75337P3
HUF75637S3ST

Fairchild/ON Semiconductor

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

UltraFET™

e3

yes

Obsolete

1 (Unlimited)

2

MATTE TIN

MOSFET (Metal Oxide)

SINGLE

260

NOT SPECIFIED

-

R-PSSO-G2

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

155W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

30m Ω @ 44A, 10V

4V @ 250μA

1.7pF @ 25V

44A Tc

108nC @ 20V

100V

10V

±20V

-

44A

0.03Ohm

100V

ROHS3 Compliant

-

-

GULL WING

unknown

HUF75344P3 vs HUF75637S3ST
HUF75309D3S

Fairchild/ON Semiconductor

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-55°C~175°C TJ

Tube

UltraFET™

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

55W Tc

-

-

N-Channel

-

70mOhm @ 19A, 10V

4V @ 250μA

350pF @ 25V

19A Tc

24nC @ 20V

55V

10V

±20V

-

-

-

-

-

D-Pak

2002

-

-

HUF75344P3 vs HUF75309D3S