Fairchild/ON Semiconductor HUF75321P3

Name: HUF75321P3
Brand: Fairchild/ON Semiconductor
SKU: 2483082-HUF75321P3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: HUF75321P3

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2483082-HUF75321P3

Description:: MOSFET N-CH 55V 35A TO-220AB

ECAD Model:

Datasheet:: TO220B03 Pkg Drawing

Specifications

Fairchild/ON Semiconductor HUF75321P3 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor HUF75321P3.

Factory Lead Time
9 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Contact Plating
Tin
Package / Case
TO-220-3
Mounting Type
Through Hole
Mount
Through Hole
Number of Pins
3
Weight
1.8g
Transistor Element Material
SILICON
Published
2002
Series
UltraFET™
Packaging
Tube
Operating Temperature
-55°C~175°C TJ
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
34MOhm
Subcategory
FET General Purpose Power
Voltage - Rated DC
55V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
35A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
93W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
93W
Case Connection
DRAIN
Turn On Delay Time
11 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
34m Ω @ 35A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
680pF @ 25V
Current - Continuous Drain (Id) @ 25°C
35A Tc
Gate Charge (Qg) (Max) @ Vgs
44nC @ 20V
Rise Time
55ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
66 ns
Turn-Off Delay Time
47 ns
Continuous Drain Current (ID)
35A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
55V
Height
16.3mm
Width
4.7mm
Length
10.67mm
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

HUF75321P3 Description

HUF75321P3 N-Channel power MOSFETs are produced using the revolutionary UltraFET process. This process is a breakthrough technology that achieves the lowest on-resistance that can be achieved per square inch of silicon. It was developed for use in areas where efficiency is crucial for switching regulators, switching converters relay drivers, motor drivers buses with low voltage, and power management in battery-powered and portable products.

HUF75321P3 Features

5A, 55V
Peak Current vs Pulse Width Curve
UIS Rating Curve
Related Literature

HUF75321P3 Applications

AC-DC Merchant Power Supply - Servers & Workstations
Workstation
Server & Mainframe

HUF75321P3 More Descriptions

N-Channel 35 A 55 V 0.034 Ohm UltraFET Power Mosfet - TO-220AB
N-Channel UltraFET Power MOSFET 55V, 35A, 34mΩ
Trans MOSFET N-CH 55V 35A 3-Pin(3 Tab) TO-220AB Rail - Rail/Tube
55V 35A 34m´Î@10V35A 93W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
Power Field-Effect Transistor, 35A I(D), 55V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Transistor Polarity:n Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:35A; On Resistance Rds(On):0.034Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. Of Pins:3Pinsrohs Compliant: Yes
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75321.

Product Comparison

The three parts on the right have similar specifications to HUF75321P3.

Image

Part Number

Manufacturer

Factory Lead Time

Lifecycle Status

Contact Plating

Package / Case

Mounting Type

Mount

Number of Pins

Weight

Transistor Element Material

Published

Series

Packaging

Operating Temperature

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Subcategory

Voltage - Rated DC

Technology

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Height

Width

Length

RoHS Status

Lead Free

Surface Mount

Terminal Finish

Terminal Position

Terminal Form

JESD-30 Code

Configuration

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Reach Compliance Code

View Compare
HUF75321P3

Fairchild/ON Semiconductor

9 Weeks

ACTIVE (Last Updated: 3 days ago)

Tin

TO-220-3

Through Hole

Through Hole

3

1.8g

SILICON

2002

UltraFET™

Tube

-55°C~175°C TJ

e3

yes

Active

1 (Unlimited)

3

EAR99

34MOhm

FET General Purpose Power

55V

MOSFET (Metal Oxide)

NOT SPECIFIED

35A

NOT SPECIFIED

Not Qualified

1

93W Tc

Single

ENHANCEMENT MODE

93W

DRAIN

11 ns

N-Channel

SWITCHING

34m Ω @ 35A, 10V

4V @ 250μA

680pF @ 25V

35A Tc

44nC @ 20V

55ns

10V

±20V

66 ns

47 ns

35A

TO-220AB

20V

55V

16.3mm

4.7mm

10.67mm

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-
HUF75645S3S

Fairchild/ON Semiconductor

-

-

-

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

Surface Mount

-

-

-

SILICON

-

UltraFET™

Tube

-55°C~175°C TJ

-

yes

Obsolete

1 (Unlimited)

2

-

-

-

-

MOSFET (Metal Oxide)

NOT SPECIFIED

-

NOT SPECIFIED

COMMERCIAL

1

310W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

14m Ω @ 75A, 10V

4V @ 250μA

3.79pF @ 25V

75A Tc

238nC @ 20V

-

10V

±20V

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

YES

NOT SPECIFIED

SINGLE

GULL WING

R-PSSO-G2

SINGLE WITH BUILT-IN DIODE

100V

75A

0.014Ohm

100V

-

HUF75321P3 vs HUF75645S3S
HUF75631P3

Fairchild/ON Semiconductor

-

-

-

TO-220-3

Through Hole

-

-

-

SILICON

-

UltraFET™

Tube

-55°C~175°C TJ

e3

yes

Obsolete

1 (Unlimited)

3

-

-

-

-

MOSFET (Metal Oxide)

NOT APPLICABLE

-

NOT APPLICABLE

COMMERCIAL

1

120W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

40m Ω @ 33A, 10V

4V @ 250μA

1.22pF @ 25V

33A Tc

79nC @ 20V

-

10V

±20V

-

-

-

TO-220AB

-

-

-

-

-

ROHS3 Compliant

-

NO

MATTE TIN

SINGLE

-

R-PSFM-T3

SINGLE WITH BUILT-IN DIODE

100V

33A

0.04Ohm

100V

unknown

HUF75321P3 vs HUF75631P3
HUF76407D3

Fairchild/ON Semiconductor

-

-

-

TO-251-3 Short Leads, IPak, TO-251AA

Through Hole

-

-

-

SILICON

-

UltraFET™

Tube

-55°C~175°C TJ

-

yes

Obsolete

1 (Unlimited)

3

-

-

-

-

MOSFET (Metal Oxide)

NOT SPECIFIED

-

NOT SPECIFIED

COMMERCIAL

1

38W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

92m Ω @ 13A, 10V

3V @ 250μA

350pF @ 25V

12A Tc

11.3nC @ 10V

-

4.5V 10V

±16V

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

NO

NOT SPECIFIED

SINGLE

-

R-PSIP-T3

SINGLE WITH BUILT-IN DIODE

60V

12A

0.117Ohm

60V

unknown

HUF75321P3 vs HUF76407D3