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FZT851TA

Diodes Incorporated FZT851TA

Part Number:
FZT851TA
Manufacturer:
Diodes Incorporated
Ventron No:
2465146-FZT851TA
Description:
TRANS NPN 60V 6A SOT-223
ECAD Model:
Datasheet:
FZT851TA

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Specifications
Diodes Incorporated FZT851TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FZT851TA.
  • Factory Lead Time
    15 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-261-4, TO-261AA
  • Number of Pins
    3
  • Weight
    7.994566mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    60V
  • Max Power Dissipation
    3W
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    6A
  • Frequency
    130MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    FZT851
  • JESD-30 Code
    R-PDSO-G4
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    3W
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    130MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    60V
  • Max Collector Current
    6A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 2A 1V
  • Current - Collector Cutoff (Max)
    50nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    375mV @ 300mA, 6A
  • Collector Emitter Breakdown Voltage
    60V
  • Transition Frequency
    130MHz
  • Collector Emitter Saturation Voltage
    375mV
  • Max Breakdown Voltage
    60V
  • Collector Base Voltage (VCBO)
    150V
  • Emitter Base Voltage (VEBO)
    6V
  • hFE Min
    100
  • Continuous Collector Current
    6A
  • Height
    1.65mm
  • Length
    6.7mm
  • Width
    3.7mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FZT851TA Overview
This device has a DC current gain of 100 @ 2A 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 375mV.A VCE saturation (Max) of 375mV @ 300mA, 6A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 6A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 6A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 130MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 6A volts is possible.

FZT851TA Features
the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of 375mV
the vce saturation(Max) is 375mV @ 300mA, 6A
the emitter base voltage is kept at 6V
the current rating of this device is 6A
a transition frequency of 130MHz


FZT851TA Applications
There are a lot of Diodes Incorporated
FZT851TA applications of single BJT transistors.


Inverter
Interface
Driver
Muting
FZT851TA More Descriptions
Power Bipolar Transistor, 6A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
Trans GP BJT NPN 60V 6A 3000mW Automotive 4-Pin(3 Tab) SOT-223 T/R
60V 3W 100@2A,1V 6A NPN SOT-223 Bipolar Transistors - BJT ROHS
FZT851 Series NPN 6 A 60 V SMT Silicon High Performance Transistor - SOT-223
SMT NPN transistor, FZT851 6A Ic 1Vce | Diodes Inc FZT851TA
TRANSISTOR, NPN, REEL 1K; Transistor Type:Bipolar; Transistor Polarity:NPN; Voltage, Vceo:60V; Current, Ic Continuous a Max:6A; Voltage, Vce Sat Max:50mV; Power Dissipation:3W; Hfe, Min:100; ft, Typ:130MHz; Case Style:SOT-223; ;RoHS Compliant: Yes
TRANSISTOR, NPN, REEL 1K; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 130MHz; Power Dissipation Pd: 3W; DC Collector Current: 6A; DC Current Gain hFE: 200hFE; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 50mV; Continuous Collector Current Ic Max: 6A; Current Ic Continuous a Max: 6A; Current Ic hFE: 2A; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Typ: 130MHz; Hfe Min: 100; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Power Dissipation Ptot Max: 3W; Pulsed Current Icm: 20A; Reel Quantity: 1000; SMD Marking: FZT851; Tape Width: 12mm; Termination Type: Surface Mount Device; Voltage Vcbo: 150V
Product Comparison
The three parts on the right have similar specifications to FZT851TA.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    JESD-30 Code
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Transistor Application
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Continuous Collector Current
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Terminal Finish
    Additional Feature
    Reach Compliance Code
    Reference Standard
    Configuration
    Power - Max
    Frequency - Transition
    View Compare
  • FZT851TA
    FZT851TA
    Diodes Incorporated
    15 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    no
    Active
    1 (Unlimited)
    4
    SMD/SMT
    EAR99
    Other Transistors
    60V
    3W
    DUAL
    GULL WING
    260
    6A
    130MHz
    40
    FZT851
    R-PDSO-G4
    1
    Single
    3W
    COLLECTOR
    SWITCHING
    130MHz
    NPN
    NPN
    60V
    6A
    100 @ 2A 1V
    50nA ICBO
    375mV @ 300mA, 6A
    60V
    130MHz
    375mV
    60V
    150V
    6V
    100
    6A
    1.65mm
    6.7mm
    3.7mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
  • FZT853TA
    FZT853TA
    Diodes Incorporated
    15 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    4
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2013
    e3
    no
    Active
    1 (Unlimited)
    4
    -
    EAR99
    -
    100V
    3W
    DUAL
    GULL WING
    260
    6A
    130MHz
    30
    FZT853
    -
    1
    Single
    3W
    COLLECTOR
    SWITCHING
    130MHz
    NPN
    NPN
    100V
    6A
    100 @ 2A 2V
    10nA ICBO
    340mV @ 500mA, 5A
    100V
    130MHz
    340mV
    100V
    200V
    6V
    -
    6A
    1.65mm
    6.7mm
    3.7mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    FZT851TA vs FZT853TA
  • FZT855TC
    FZT855TC
    Diodes Incorporated
    -
    -
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    -
    7.994566mg
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2013
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    150V
    3W
    -
    -
    -
    5A
    -
    -
    FZT855
    -
    -
    -
    -
    -
    -
    90MHz
    -
    NPN
    355mV
    5A
    100 @ 1A 5V
    50nA ICBO
    355mV @ 500mA, 5A
    150V
    -
    -
    -
    250V
    6V
    -
    5A
    -
    -
    -
    No SVHC
    -
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    FZT851TA vs FZT855TC
  • FZT851QTA
    FZT851QTA
    Diodes Incorporated
    30 Weeks
    -
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    no
    Active
    1 (Unlimited)
    4
    -
    EAR99
    Other Transistors
    -
    3W
    DUAL
    GULL WING
    260
    -
    -
    40
    -
    R-PDSO-G4
    1
    -
    -
    COLLECTOR
    -
    -
    NPN
    NPN
    375mV
    6A
    100 @ 2A 1V
    50nA ICBO
    375mV @ 300mA, 6A
    60V
    130MHz
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    Matte Tin (Sn)
    HIGH RELIABILITY
    not_compliant
    AEC-Q101
    SINGLE
    3W
    130MHz
    FZT851TA vs FZT851QTA
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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