Fairchild/ON Semiconductor FQU9N25TU
- Part Number:
- FQU9N25TU
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2481666-FQU9N25TU
- Description:
- MOSFET N-CH 250V 7.4A IPAK
- Datasheet:
- FQU9N25TU
Fairchild/ON Semiconductor FQU9N25TU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQU9N25TU.
- Lifecycle StatusACTIVE (Last Updated: 6 days ago)
- Factory Lead Time6 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
- Number of Pins3
- Weight343.08mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesQFET®
- Published2013
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Power
- Voltage - Rated DC250V
- TechnologyMOSFET (Metal Oxide)
- Current Rating7.4A
- Number of Elements1
- Power Dissipation-Max2.5W Ta 55W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.5W
- Turn On Delay Time13 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs420m Ω @ 3.7A, 10V
- Vgs(th) (Max) @ Id5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds700pF @ 25V
- Current - Continuous Drain (Id) @ 25°C7.4A Tc
- Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
- Rise Time105ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)45 ns
- Turn-Off Delay Time25 ns
- Continuous Drain Current (ID)7.4A
- Gate to Source Voltage (Vgs)30V
- Drain-source On Resistance-Max0.42Ohm
- Drain to Source Breakdown Voltage250V
- Pulsed Drain Current-Max (IDM)29.6A
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FQU9N25TU Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 700pF @ 25V.This device has a continuous drain current (ID) of [7.4A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=250V, the drain-source breakdown voltage is 250V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 25 ns.A maximum pulsed drain current of 29.6A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 13 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Its overall power consumption can be reduced by using drive voltage (10V).
FQU9N25TU Features
a continuous drain current (ID) of 7.4A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 25 ns
based on its rated peak drain current 29.6A.
FQU9N25TU Applications
There are a lot of ON Semiconductor
FQU9N25TU applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 700pF @ 25V.This device has a continuous drain current (ID) of [7.4A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=250V, the drain-source breakdown voltage is 250V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 25 ns.A maximum pulsed drain current of 29.6A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 13 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Its overall power consumption can be reduced by using drive voltage (10V).
FQU9N25TU Features
a continuous drain current (ID) of 7.4A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 25 ns
based on its rated peak drain current 29.6A.
FQU9N25TU Applications
There are a lot of ON Semiconductor
FQU9N25TU applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
FQU9N25TU More Descriptions
Power MOSFET, N-Channel, QFET®, 250 V, 7.4 A, 420 mΩ, IPAK
Power Field-Effect Transistor, 7.4A I(D), 250V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Power Field-Effect Transistor, 7.4A I(D), 250V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
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