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FQU17P06TU

Fairchild/ON Semiconductor FQU17P06TU

Part Number:
FQU17P06TU
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2478784-FQU17P06TU
Description:
MOSFET P-CH 60V 12A IPAK
ECAD Model:
Datasheet:
FQU17P06TU

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Specifications
Fairchild/ON Semiconductor FQU17P06TU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQU17P06TU.
  • Lifecycle Status
    ACTIVE (Last Updated: 5 days ago)
  • Factory Lead Time
    7 Weeks
  • Contact Plating
    Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-251-3 Short Leads, IPak, TO-251AA
  • Number of Pins
    3
  • Weight
    343.08mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    QFET®
  • Published
    2014
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    135MOhm
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -60V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    -12A
  • Number of Elements
    1
  • Power Dissipation-Max
    2.5W Ta 44W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.5W
  • Turn On Delay Time
    13 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    135m Ω @ 6A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    900pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    12A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    27nC @ 10V
  • Rise Time
    100ns
  • Drain to Source Voltage (Vdss)
    60V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±25V
  • Fall Time (Typ)
    60 ns
  • Turn-Off Delay Time
    22 ns
  • Continuous Drain Current (ID)
    -12A
  • Threshold Voltage
    -4V
  • Gate to Source Voltage (Vgs)
    25V
  • Drain to Source Breakdown Voltage
    -60V
  • Pulsed Drain Current-Max (IDM)
    48A
  • Height
    7.57mm
  • Length
    6.8mm
  • Width
    2.5mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FQU17P06TU Description
The FQU17P06TU is a P-channel enhancement mode power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology FQU17P06TU has been specially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. The onsemi FQU17P06TU is suitable for switched-mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.

FQU17P06TU Features
-12A, -60V, RDS(on) = 135mΩ(Max.) @VGS = -10 V, ID = -6A
Low Gate Charge ( Typ. 21nC)
Low Crss ( Typ. 80pF)
100% Avalanche Tested
In the TO-251-3 package

FQU17P06TU Applications
LED TV
Switched-mode power supplies
Audio amplifier
DC motor control
Variable switching power applications
FQU17P06TU More Descriptions
Power MOSFET, P-Channel, QFET®, -60 V, -12 A, 135 mΩ, IPAK
Power Field-Effect Transistor, 12A I(D), 60V, 0.135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
Transistor Polarity:p Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:12A; On Resistance Rds(On):0.11Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. Of Pins:3Pins Rohs Compliant: Yes
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Product Comparison
The three parts on the right have similar specifications to FQU17P06TU.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Subcategory
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Terminal Finish
    Terminal Position
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Configuration
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    View Compare
  • FQU17P06TU
    FQU17P06TU
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 5 days ago)
    7 Weeks
    Tin
    Through Hole
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    3
    343.08mg
    SILICON
    -55°C~150°C TJ
    Tube
    QFET®
    2014
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    135MOhm
    Other Transistors
    -60V
    MOSFET (Metal Oxide)
    -12A
    1
    2.5W Ta 44W Tc
    Single
    ENHANCEMENT MODE
    2.5W
    13 ns
    P-Channel
    SWITCHING
    135m Ω @ 6A, 10V
    4V @ 250μA
    900pF @ 25V
    12A Tc
    27nC @ 10V
    100ns
    60V
    10V
    ±25V
    60 ns
    22 ns
    -12A
    -4V
    25V
    -60V
    48A
    7.57mm
    6.8mm
    2.5mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FQU10N20LTU
    FQU10N20LTU
    Fairchild/ON Semiconductor
    -
    -
    -
    -
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    -
    -
    SILICON
    -55°C~150°C TJ
    Tube
    QFET®
    -
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    1
    2.5W Ta 51W Tc
    -
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    360m Ω @ 3.8A, 10V
    2V @ 250μA
    830pF @ 25V
    7.6A Tc
    17nC @ 5V
    -
    200V
    5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    30.4A
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    NO
    MATTE TIN
    SINGLE
    NOT APPLICABLE
    unknown
    NOT APPLICABLE
    3
    R-PSIP-T3
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    7.6A
    0.38Ohm
    200V
    180 mJ
    FQU17P06TU vs FQU10N20LTU
  • FQU12N20TU
    FQU12N20TU
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 5 days ago)
    6 Weeks
    -
    Through Hole
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    3
    343.08mg
    SILICON
    -55°C~150°C TJ
    Tube
    QFET®
    2013
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    FET General Purpose Power
    200V
    MOSFET (Metal Oxide)
    9A
    1
    2.5W Ta 55W Tc
    Single
    ENHANCEMENT MODE
    2.5W
    13 ns
    N-Channel
    SWITCHING
    280m Ω @ 4.5A, 10V
    5V @ 250μA
    910pF @ 25V
    9A Tc
    23nC @ 10V
    120ns
    -
    10V
    ±30V
    55 ns
    30 ns
    9A
    -
    30V
    200V
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    Tin (Sn)
    -
    -
    -
    -
    -
    -
    -
    -
    9A
    0.28Ohm
    -
    -
    FQU17P06TU vs FQU12N20TU
  • FQU1N60CTU
    FQU1N60CTU
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 5 days ago)
    4 Weeks
    -
    Through Hole
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    3
    343.08mg
    SILICON
    -55°C~150°C TJ
    Tube
    QFET®
    2013
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    11.5Ohm
    FET General Purpose Power
    600V
    MOSFET (Metal Oxide)
    1A
    1
    2.5W Ta 28W Tc
    Single
    ENHANCEMENT MODE
    2.5W
    7 ns
    N-Channel
    SWITCHING
    11.5 Ω @ 500mA, 10V
    4V @ 250μA
    170pF @ 25V
    1A Tc
    6.2nC @ 10V
    21ns
    -
    10V
    ±30V
    27 ns
    13 ns
    1A
    4V
    30V
    600V
    4A
    6.1mm
    6.6mm
    2.3mm
    No SVHC
    -
    ROHS3 Compliant
    Lead Free
    -
    Tin (Sn)
    -
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    -
    -
    -
    -
    1A
    -
    -
    -
    FQU17P06TU vs FQU1N60CTU
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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