Fairchild/ON Semiconductor FQP3P50

Name: FQP3P50
Brand: Fairchild/ON Semiconductor
SKU: 2478405-FQP3P50
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FQP3P50

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2478405-FQP3P50

Description:: MOSFET P-CH 500V 2.7A TO-220

ECAD Model:

Datasheet:: TO220B03 Pkg Drawing

Specifications

Fairchild/ON Semiconductor FQP3P50 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQP3P50.

Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
1.8g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
QFET®
Published
2017
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
4.9Ohm
Subcategory
Other Transistors
Voltage - Rated DC
-500V
Technology
MOSFET (Metal Oxide)
Current Rating
-2.7A
Number of Elements
1
Power Dissipation-Max
85W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
85W
Turn On Delay Time
12 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
4.9 Ω @ 1.35A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
660pF @ 25V
Current - Continuous Drain (Id) @ 25°C
2.7A Tc
Gate Charge (Qg) (Max) @ Vgs
23nC @ 10V
Rise Time
56ns
Drain to Source Voltage (Vdss)
500V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
45 ns
Turn-Off Delay Time
35 ns
Continuous Drain Current (ID)
2.7A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
-500V
Dual Supply Voltage
-500V
Avalanche Energy Rating (Eas)
250 mJ
Nominal Vgs
-5 V
Height
9.4mm
Length
10.1mm
Width
4.7mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FQP3P50 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 250 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 660pF @ 25V.This device has a continuous drain current (ID) of [2.7A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=-500V, the drain-source breakdown voltage is -500V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 35 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 12 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

FQP3P50 Features
the avalanche energy rating (Eas) is 250 mJ
a continuous drain current (ID) of 2.7A
a drain-to-source breakdown voltage of -500V voltage
the turn-off delay time is 35 ns
a 500V drain to source voltage (Vdss)

FQP3P50 Applications
There are a lot of ON Semiconductor
FQP3P50 applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

FQP3P50 More Descriptions

Power MOSFET, P-Channel, QFET®, -500 V, -2.7 A, 4.9 Ω, TO-220
Transistor, P-channel, QFET MOSFET, -500V, -2.7A, 4.9 Ohm, -55 to 150C, TO-220 | ON Semiconductor FQP3P50
Trans MOSFET P-CH 500V 2.7A 3-Pin(3 Tab) TO-220AB Rail - Rail/Tube
MOSFET P-Channel 500V 2.7A (Tc) 85W (Tc) Through Hole TO-220-3
P-Channel 500 V 4.9 Ohm Flange Mount Mosfet - TO-220
Power Field-Effect Transistor, 2.7A I(D), 500V, 4.9ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, P, TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:500V; On Resistance Rds(on):4.9ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-5V; Power Dissipation Pd:85W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Current Id Max:-2.7A; On State Resistance Max:4.9ohm; Package / Case:TO-220; Power Dissipation Pd:85W; Power Dissipation Pd:85W; Pulse Current Idm:10.8A; Termination Type:Through Hole; Voltage Vds Typ:-500V; Voltage Vgs Max:-30V; Voltage Vgs Rds on Measurement:-10V; Voltage Vgs th Max:-5V
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Product Comparison

The three parts on the right have similar specifications to FQP3P50.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Subcategory

Voltage - Rated DC

Technology

Current Rating

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Avalanche Energy Rating (Eas)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

Terminal Finish

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Configuration

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Supplier Device Package

HTS Code

View Compare
FQP3P50

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

8 Weeks

Tin

Through Hole

Through Hole

TO-220-3

3

1.8g

SILICON

-55°C~150°C TJ

Tube

QFET®

2017

e3

yes

Active

1 (Unlimited)

3

EAR99

4.9Ohm

Other Transistors

-500V

MOSFET (Metal Oxide)

-2.7A

1

85W Tc

Single

ENHANCEMENT MODE

85W

12 ns

P-Channel

SWITCHING

4.9 Ω @ 1.35A, 10V

5V @ 250μA

660pF @ 25V

2.7A Tc

23nC @ 10V

56ns

500V

10V

±30V

45 ns

35 ns

2.7A

TO-220AB

30V

-500V

-500V

250 mJ

-5 V

9.4mm

10.1mm

4.7mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FQP32N12V2

Fairchild/ON Semiconductor

-

-

-

-

Through Hole

TO-220-3

-

-

SILICON

-55°C~175°C TJ

Tube

QFET®

-

e3

yes

Obsolete

1 (Unlimited)

3

-

-

-

-

MOSFET (Metal Oxide)

-

1

150W Tc

-

ENHANCEMENT MODE

-

-

N-Channel

SWITCHING

50m Ω @ 16A, 10V

4V @ 250μA

1.86pF @ 25V

32A Tc

53nC @ 10V

-

120V

10V

±30V

-

-

-

TO-220AB

-

-

-

439 mJ

-

-

-

-

-

-

ROHS3 Compliant

-

NO

MATTE TIN

SINGLE

NOT APPLICABLE

unknown

NOT APPLICABLE

3

R-PSFM-T3

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

32A

0.05Ohm

128A

120V

-

-

FQP3P50 vs FQP32N12V2
FQP34N20L

Fairchild/ON Semiconductor

-

-

-

-

Through Hole

TO-220-3

-

-

-

-55°C~150°C TJ

Tube

QFET®

2000

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

180W Tc

-

-

-

-

N-Channel

-

75mOhm @ 15.5A, 10V

2V @ 250μA

3900pF @ 25V

31A Tc

72nC @ 5V

-

200V

5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

TO-220-3

-

FQP3P50 vs FQP34N20L
FQP3N80

Fairchild/ON Semiconductor

-

-

-

-

Through Hole

TO-220-3

-

-

SILICON

-55°C~150°C TJ

Tube

QFET®

2000

e3

yes

Obsolete

1 (Unlimited)

3

EAR99

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

1

107W Tc

-

ENHANCEMENT MODE

-

-

N-Channel

SWITCHING

5 Ω @ 1.5A, 10V

5V @ 250μA

690pF @ 25V

3A Tc

19nC @ 10V

-

800V

10V

±30V

-

-

-

TO-220AB

-

-

-

320 mJ

-

-

-

-

-

-

-

-

NO

Tin (Sn)

SINGLE

NOT SPECIFIED

compliant

NOT SPECIFIED

-

R-PSFM-T3

Not Qualified

SINGLE WITH BUILT-IN DIODE

3A

4.8Ohm

12A

800V

-

8541.29.00.95

FQP3P50 vs FQP3N80

Certification

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FQP3P50 Specification

Part Number	Manufacturers	Description	Stock	Price
FQP3P50 DISTI #V36:1790_06359204	ON Semiconductor	Trans MOSFET P-CH 500V 2.7A 3-Pin(3 Tab) TO-220AB	5225	1 $1.5427 10 $1.1982 100 $0.927 500 $0.7965 1000 $0.6358 2000 $0.6181
FQP3P50 DISTI #V99:2348_06359204	ON Semiconductor	Trans MOSFET P-CH 500V 2.7A 3-Pin(3 Tab) TO-220AB	970	1 $1.5427 10 $1.1982 100 $0.927 500 $0.7965 1000 $0.6358 2000 $0.6181
FQP3P50 DISTI #FQP3P50-ND	ON Semiconductor	MOSFET P-CH 500V 2.7A TO-220 RoHS: Compliant	9702	1 $1.5 10 $1.345 25 $1.2764 100 $1.0486 1000 $0.68387 3000 $0.63827 5000 $0.60636
FQP3P50 DISTI #33155050	ON Semiconductor	Trans MOSFET P-CH 500V 2.7A 3-Pin(3 Tab) TO-220AB	5225	13 $1.5427
FQP3P50 DISTI #33149975	ON Semiconductor	Trans MOSFET P-CH 500V 2.7A 3-Pin(3 Tab) TO-220AB	3051	27 $0.3754
FQP3P50 DISTI #33952590	ON Semiconductor	Trans MOSFET P-CH 500V 2.7A 3-Pin(3 Tab) TO-220AB	1000	1000 $0.8656
FQP3P50 DISTI #31643117	ON Semiconductor	Trans MOSFET P-CH 500V 2.7A 3-Pin(3 Tab) TO-220AB	970	12 $1.5427
FQP3P50 DISTI #30612815	ON Semiconductor	Trans MOSFET P-CH 500V 2.7A 3-Pin(3 Tab) TO-220AB	44	20 $1.2875
FQP3P50 DISTI #FQP3P50	ON Semiconductor	Trans MOSFET P-CH 500V 2.7A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	105	1 $0.8199 10 $0.7289 25 $0.6559 50 $0.5959 100 $0.5469 500 $0.5049 1000 $0.4689
FQP3P50 DISTI #FQP3P50	ON Semiconductor	Trans MOSFET P-CH 500V 2.7A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	4351	50 $0.4929 100 $0.4899 150 $0.4839 250 $0.4769 500 $0.4659
FQP3P50 DISTI #FQP3P50	ON Semiconductor	Trans MOSFET P-CH 500V 2.7A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	0	363 $0.9009 726 $0.8959 1089 $0.8839 1815 $0.8729 3630 $0.8509
FQP3P50 DISTI #FQP3P50	ON Semiconductor	Trans MOSFET P-CH 500V 2.7A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	0	1000 $0.7552 2000 $0.72615 3000 $0.69926 5000 $0.67429 10000 $0.65103 25000 $0.62933 50000 $0.61902
FQP3P50 DISTI #82C4337	ON Semiconductor	TRANSISTOR,MOSFET,P-CHANNEL,500V V(BR)DSS,2.7A I(D	0	1 $1.6 10 $1.31 100 $1.06 500 $0.932 1000 $0.78 2500 $0.723 10000 $0.691
FQP3P50 DISTI #	ON Semiconductor	P-Channel 500 V 4.9 Ohm Flange Mount Mosfet - TO-2 RoHS: Compliant	1555	25 $1.14 250 $0.73 1000 $0.65 2000 $0.615
FQP3P50 DISTI #512-FQP3P50	ON Semiconductor	MOSFET 500V P-Channel QFET RoHS: Compliant	2533	1 $1.42 10 $1.21 100 $0.933 500 $0.825 1000 $0.651 2000 $0.621
FQP3P50_Q DISTI #512-FQP3P50_Q	ON Semiconductor	MOSFET 500V P-Channel QFET RoHS: Not Compliant	0
FQP3P50 DISTI #	ON Semiconductor	Power Field-Effect Transistor, 2.7A I(D), 500V, 4. RoHS: Compliant	6000	1 $0.68 25 $0.63 100 $0.61 500 $0.58 1000 $0.55
FQP3P50 DISTI #	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 2.7A I(D), 500V, 4. RoHS: Compliant	10945	1 $0.68 25 $0.63 100 $0.61 500 $0.58 1000 $0.55
FQP3P50 DISTI #	Fairchild Semiconductor Corporation		2
FQP3P50 DISTI #6715118	ON Semiconductor	MOSFET P-CHANNEL 500V 2.7A TO220AB, PK	1020	5 $1.726 25 $1.466 100 $1.184 250 $1.106 500 $1.028
FQP3P50 DISTI #6715118P	ON Semiconductor	MOSFET P-CHANNEL 500V 2.7A TO220AB, TU	840	25 $1.466 100 $1.184 250 $1.106 500 $1.028
FQP3P50 DISTI #FQP3P50	ON Semiconductor	Transistor: P-MOSFET, unipolar, -500V, -2.7A,	2358	1 $0.8 5 $0.73 25 $0.61 100 $0.52 500 $0.47
FQP3P50 DISTI #XSFP00000013662	Fairchild Semiconductor Corporation	RoHS: Compliant	840	137 $1.04 840 $0.9733

Fairchild/ON Semiconductor FQP3P50

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