Fairchild/ON Semiconductor FQP17P06

Name: FQP17P06
Brand: Fairchild/ON Semiconductor
SKU: 2478752-FQP17P06
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FQP17P06

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2478752-FQP17P06

Description:: MOSFET P-CH 60V 17A TO-220

ECAD Model:

Datasheet:: TO220B03 Pkg Drawing

Specifications

Fairchild/ON Semiconductor FQP17P06 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQP17P06.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
6 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
1.8g
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
QFET®
Published
1999
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
120mOhm
Subcategory
Other Transistors
Voltage - Rated DC
-60V
Technology
MOSFET (Metal Oxide)
Current Rating
-17A
Number of Elements
1
Power Dissipation-Max
79W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
79W
Turn On Delay Time
13 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
120m Ω @ 8.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
900pF @ 25V
Current - Continuous Drain (Id) @ 25°C
17A Tc
Gate Charge (Qg) (Max) @ Vgs
27nC @ 10V
Rise Time
100ns
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
60 ns
Turn-Off Delay Time
22 ns
Continuous Drain Current (ID)
-17A
Threshold Voltage
-4V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
25V
Drain to Source Breakdown Voltage
-60V
Pulsed Drain Current-Max (IDM)
68A
Dual Supply Voltage
-60V
Nominal Vgs
-4 V
Height
9.4mm
Length
10.1mm
Width
4.7mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FQP17P06 Description
FQP17P06 is a P-Channel Power MOSFET. This P-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. The onsemi FQP17P06 MOSFET has been specially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. The FQP17P06 is suitable for switched-mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.

FQP17P06 Features
-17A, -60V, RDS(on) = 0.12Ω(Max.) @VGS = -10 V, ID = -8.5A
Low gate charge ( Typ. 21nC)
Low Crss ( Typ. 80pF)
100% avalanche tested
175°C maximum junction temperature rating

FQP17P06 Applications
Switched-mode power supplies
Audio amplifier
DC motor control
Variable switching power applications
Other Audio & Video

FQP17P06 More Descriptions

P-Channel Power MOSFET, QFET®, -60 V, -17 A, 120 mΩ, TO-220
Power Field-Effect Transistor, 17A I(D), 60V, 0.12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
MOSFET, P, TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:60V; On Resistance Rds(on):120mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:79W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Current Id Max:-17A; Current Temperature:25°C; Device Marking:FQP17P06; External Depth:29.03mm; External Length / Height:4.5mm; External Width:9.9mm; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:120mohm; Package / Case:TO-220; Power Dissipation Pd:79W; Power Dissipation Pd:79W; Pulse Current Idm:68A; Termination Type:Through Hole; Voltage Vds Typ:-60V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V; Voltage Vgs th Max:-4V

Product Comparison

The three parts on the right have similar specifications to FQP17P06.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Subcategory

Voltage - Rated DC

Technology

Current Rating

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Dual Supply Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Termination

Terminal Finish

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Avalanche Energy Rating (Eas)

Additional Feature

View Compare
FQP17P06

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

6 Weeks

Tin

Through Hole

Through Hole

TO-220-3

3

1.8g

SILICON

-55°C~175°C TJ

Tube

QFET®

1999

e3

yes

Active

1 (Unlimited)

3

EAR99

120mOhm

Other Transistors

-60V

MOSFET (Metal Oxide)

-17A

1

79W Tc

Single

ENHANCEMENT MODE

79W

13 ns

P-Channel

SWITCHING

120m Ω @ 8.5A, 10V

4V @ 250μA

900pF @ 25V

17A Tc

27nC @ 10V

100ns

60V

10V

±25V

60 ns

22 ns

-17A

-4V

TO-220AB

25V

-60V

68A

-60V

-4 V

9.4mm

10.1mm

4.7mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-
FQP19N20CTSTU

Fairchild/ON Semiconductor

-

-

-

-

Through Hole

TO-220-3

-

-

-

-55°C~150°C TJ

Tube

QFET®

2013

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

139W Tc

-

-

-

-

N-Channel

-

170mOhm @ 9.5A, 10V

4V @ 250μA

1080pF @ 25V

19A Tc

53nC @ 10V

-

200V

10V

±30V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

TO-220-3

-

-

-

-

-

-

-

FQP17P06 vs FQP19N20CTSTU
FQP12N60C

Fairchild/ON Semiconductor

ACTIVE, NOT REC (Last Updated: 2 days ago)

6 Weeks

-

Through Hole

Through Hole

TO-220-3

3

1.8g

SILICON

-55°C~150°C TJ

Tube

QFET®

-

e3

yes

Not For New Designs

1 (Unlimited)

3

EAR99

650mOhm

-

600V

MOSFET (Metal Oxide)

12A

1

225W Tc

Single

ENHANCEMENT MODE

225W

30 ns

N-Channel

SWITCHING

650m Ω @ 6A, 10V

4V @ 250μA

2290pF @ 25V

12A Tc

63nC @ 10V

85ns

-

10V

±30V

90 ns

155 ns

12A

4V

TO-220AB

30V

600V

48A

600V

4 V

9.4mm

10.1mm

4.7mm

No SVHC

-

ROHS3 Compliant

Lead Free

-

Through Hole

Tin (Sn)

NOT SPECIFIED

NOT SPECIFIED

Not Qualified

870 mJ

-

FQP17P06 vs FQP12N60C
FQP13N10L

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

4 Weeks

-

Through Hole

Through Hole

TO-220-3

3

1.8g

SILICON

-55°C~175°C TJ

Tube

QFET®

2013

e3

yes

Active

1 (Unlimited)

3

EAR99

180mOhm

FET General Purpose Power

100V

MOSFET (Metal Oxide)

12.8A

1

65W Tc

Single

ENHANCEMENT MODE

65W

7.5 ns

N-Channel

SWITCHING

180m Ω @ 6.4A, 10V

2V @ 250μA

520pF @ 25V

12.8A Tc

12nC @ 5V

220ns

-

5V 10V

±20V

72 ns

22 ns

12.8A

2V

TO-220AB

20V

100V

-

-

-

9.4mm

10.1mm

4.7mm

No SVHC

-

ROHS3 Compliant

Lead Free

-

-

Tin (Sn)

NOT SPECIFIED

NOT SPECIFIED

Not Qualified

95 mJ

FAST SWITCHING

FQP17P06 vs FQP13N10L

Certification

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FQP17P06 Specification

Part Number	Manufacturers	Description	Stock	Price
FQP17P06 DISTI #33713159	ON Semiconductor	QF -60V 120MOHM TO220	54000	100 $0.6813
FQP17P06 DISTI #30325253	ON Semiconductor	QF -60V 120MOHM TO220	3203	23 $0.4434
FQP17P06 DISTI #FQP17P06-ND	ON Semiconductor	MOSFET P-CH 60V 17A TO-220 RoHS: Compliant	2728	1 $1.15 10 $1.03 25 $0.9772 100 $0.8027 1000 $0.52353 3000 $0.48863 5000 $0.4642
FQP17P06 DISTI #V36:1790_06340961	ON Semiconductor	QF -60V 120MOHM TO220	0	1000 $0.835 10000 $0.7855 100000 $0.5105 500000 $0.3879 1000000 $0.3872
FQP17P06 DISTI #FQP17P06	ON Semiconductor	Trans MOSFET P-CH 60V 17A 3-Pin(3 Tab) TO-220AB Ra RoHS: Compliant	2031	1000 $0.43451 2000 $0.43169 3000 $0.42615 5000 $0.42076 10000 $0.41037
FQP17P06 DISTI #FQP17P06	ON Semiconductor	Trans MOSFET P-CH 60V 17A 3-Pin(3 Tab) TO-220AB Ra RoHS: Compliant	4900	1 $0.7219 10 $0.6419 25 $0.5779 50 $0.5249 100 $0.4809 500 $0.4439 1000 $0.4119
FQP17P06 DISTI #FQP17P06	ON Semiconductor	Trans MOSFET P-CH 60V 17A 3-Pin(3 Tab) TO-220AB Ra RoHS: Compliant	0	582 $0.5619 1164 $0.5579 1746 $0.5509 2910 $0.5439 5820 $0.5299
FQP17P06 DISTI #FQP17P06	ON Semiconductor	Trans MOSFET P-CH 60V 17A 3-Pin(3 Tab) TO-220AB Ra RoHS: Compliant	0	1000 $0.6648 2000 $0.63923 3000 $0.61556 5000 $0.59357 10000 $0.5731 25000 $0.554 50000 $0.54492
FQP17P06 DISTI #58K1522	ON Semiconductor	Trans MOSFET P-CH 60V 17A 3-Pin(3 Tab) TO-220AB Ra RoHS: Compliant	0	1 $1.42 10 $1.22 100 $0.946 500 $0.841 1000 $0.672 2500 $0.601
FQP17P06 DISTI #58K1522	ON Semiconductor	P CHANNEL MOSFET, -60V, 17A, TO-220, Transistor P	421	1 $1.3 10 $1.12 100 $0.866 500 $0.77 1000 $0.615 2500 $0.55
FQP17P06. DISTI #81AC8731	ON Semiconductor	QF -60V 120MOHM TO220 ROHS COMPLIANT: YES	7231	1 $1.33 10 $1.15 100 $0.866 500 $0.77 1000 $0.615 2500 $0.55
FQP17P06 DISTI #	ON Semiconductor	P-Channel 60 V 0.12 Ohm Through Hole Mosfet - TO-2 RoHS: Compliant	83087	25 $0.705 250 $0.48 1000 $0.435 2000 $0.415
FQP17P06 DISTI #512-FQP17P06	ON Semiconductor	MOSFET 60V P-Channel QFET RoHS: Compliant	221	1 $1.09 10 $0.93 100 $0.714 500 $0.631 1000 $0.498 2000 $0.475
FQP17P06_Q DISTI #512-FQP17P06_Q	ON Semiconductor	MOSFET RoHS: Not Compliant	0
FQP17P06 DISTI #	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 17A I(D), 60V, 0.12 RoHS: Compliant	166	1 $0.6 25 $0.56 100 $0.53 500 $0.51 1000 $0.49
FQP17P06 DISTI #6715045	ON Semiconductor	MOSFET P-CHANNEL 60V 17A TO220AB, PK	2435	5 $1.376 25 $0.82
FQP17P06 DISTI #FQP17P06	ON Semiconductor	Transistor: P-MOSFET, unipolar, -60V, -12A, 79	271	1 $1.09 3 $0.98 10 $0.87 50 $0.79 250 $0.72
FQP17P06 DISTI #9846506	ON Semiconductor	MOSFET, P, TO-220 RoHS: Compliant	4493	1 $1.94 10 $1.73 100 $1.37 500 $1.07 1000 $0.832
FQP17P06 DISTI #XSFP00000002006	Fairchild Semiconductor Corporation	RoHS: Compliant	44867	209 $0.6857 44867 $0.64
FQP17P06 DISTI #XSKDRABV0019395		RoHS: Compliant	5800	1000 $0.6657 5800 $0.6213
FQP17P06 DISTI #9846506	ON Semiconductor	MOSFET, P, TO-220	5062	1 $0.969 10 $0.78 100 $0.556 250 $0.524 500 $0.491

FQP17P0~~(2)~~
FQP17P~~(3)~~
FQP17~~(9)~~
FQP1~~(85)~~
FQP~~(96)~~

Fairchild/ON Semiconductor FQP17P06

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