Fairchild/ON Semiconductor FQP12N60C

Name: FQP12N60C
Brand: Fairchild/ON Semiconductor
SKU: 2850389-FQP12N60C
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FQP12N60C

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2850389-FQP12N60C

Description:: MOSFET N-CH 600V 12A TO-220

ECAD Model:

Datasheet:: TO220B03 Pkg Drawing

Specifications

Fairchild/ON Semiconductor FQP12N60C technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQP12N60C.

Lifecycle Status
ACTIVE, NOT REC (Last Updated: 2 days ago)
Factory Lead Time
6 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
1.8g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
QFET®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Resistance
650mOhm
Terminal Finish
Tin (Sn)
Voltage - Rated DC
600V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
12A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
225W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
225W
Turn On Delay Time
30 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
650m Ω @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2290pF @ 25V
Current - Continuous Drain (Id) @ 25°C
12A Tc
Gate Charge (Qg) (Max) @ Vgs
63nC @ 10V
Rise Time
85ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
90 ns
Turn-Off Delay Time
155 ns
Continuous Drain Current (ID)
12A
Threshold Voltage
4V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
600V
Pulsed Drain Current-Max (IDM)
48A
Dual Supply Voltage
600V
Avalanche Energy Rating (Eas)
870 mJ
Nominal Vgs
4 V
Height
9.4mm
Length
10.1mm
Width
4.7mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FQP12N60C Description
The FQP12N60C N-Channel enhancement mode power field effect transistor is produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

FQP12N60C Features
12 A, 600 V, RDS(on) = 650 mΩ (Max.) @ VGS = 10 V, ID = 6 A
Low Gate Charge (Typ. 48 nC)
Low Crss (Typ. 21 pF)
100% Avalanche Tested

FQP12N60C Applications
High efficient switched-mode power supplies
Active power factor correction
Electronic lamp ballast based on half-bridge topology

FQP12N60C More Descriptions

Power MOSFET, N-Channel, QFET®, 600 V, 12 A, 650 mΩ, TO-220
FQP12N60C Series 600 V 0.65 Ohm Through Hole N-Channel Mosfet - TO-220
Trans MOSFET N-CH 600V 12A 3-Pin(3 Tab) TO-220AB Rail - Rail/Tube
Power Field-Effect Transistor, 12A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(on):530mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:225W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:12A; Current Temperature:25°C; External Length / Height:4.83mm; External Width:10.67mm; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:650mohm; Package / Case:TO-220; Power Dissipation Pd:225W; Power Dissipation Pd:225W; Pulse Current Idm:48A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.

Product Comparison

The three parts on the right have similar specifications to FQP12N60C.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Terminal Finish

Voltage - Rated DC

Technology

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Dual Supply Voltage

Avalanche Energy Rating (Eas)

Nominal Vgs

Height

Length

Width

REACH SVHC

RoHS Status

Lead Free

Published

Subcategory

Surface Mount

HTS Code

Terminal Position

Reach Compliance Code

JESD-30 Code

Configuration

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Supplier Device Package

View Compare
FQP12N60C

Fairchild/ON Semiconductor

ACTIVE, NOT REC (Last Updated: 2 days ago)

6 Weeks

Through Hole

Through Hole

TO-220-3

3

1.8g

SILICON

-55°C~150°C TJ

Tube

QFET®

e3

yes

Not For New Designs

1 (Unlimited)

3

Through Hole

EAR99

650mOhm

Tin (Sn)

600V

MOSFET (Metal Oxide)

NOT SPECIFIED

12A

NOT SPECIFIED

Not Qualified

1

225W Tc

Single

ENHANCEMENT MODE

225W

30 ns

N-Channel

SWITCHING

650m Ω @ 6A, 10V

4V @ 250μA

2290pF @ 25V

12A Tc

63nC @ 10V

85ns

10V

±30V

90 ns

155 ns

12A

4V

TO-220AB

30V

600V

48A

600V

870 mJ

4 V

9.4mm

10.1mm

4.7mm

No SVHC

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FQP16N25

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

5 Weeks

Through Hole

Through Hole

TO-220-3

3

1.8g

SILICON

-55°C~150°C TJ

Tube

QFET®

e3

yes

Active

1 (Unlimited)

3

-

EAR99

-

Tin (Sn)

250V

MOSFET (Metal Oxide)

NOT SPECIFIED

16A

NOT SPECIFIED

Not Qualified

1

142W Tc

Single

ENHANCEMENT MODE

50W

17 ns

N-Channel

SWITCHING

230m Ω @ 8A, 10V

5V @ 250μA

1200pF @ 25V

16A Tc

35nC @ 10V

140ns

10V

±30V

75 ns

45 ns

16A

-

TO-220AB

30V

250V

64A

-

560 mJ

-

16.3mm

10.67mm

4.7mm

-

ROHS3 Compliant

Lead Free

2013

FET General Purpose Power

-

-

-

-

-

-

-

-

-

-

-

FQP12N60C vs FQP16N25
FQP10N20

Fairchild/ON Semiconductor

-

-

-

Through Hole

TO-220-3

-

-

SILICON

-55°C~150°C TJ

Tube

QFET®

e3

yes

Obsolete

1 (Unlimited)

3

-

EAR99

-

Tin (Sn)

-

MOSFET (Metal Oxide)

NOT SPECIFIED

-

NOT SPECIFIED

Not Qualified

1

87W Tc

-

ENHANCEMENT MODE

-

-

N-Channel

SWITCHING

360m Ω @ 5A, 10V

5V @ 250μA

670pF @ 25V

10A Tc

18nC @ 10V

-

10V

±30V

-

-

-

-

TO-220AB

-

-

38A

-

210 mJ

-

-

-

-

-

-

-

2000

FET General Purpose Power

NO

8541.29.00.95

SINGLE

compliant

R-PSFM-T3

SINGLE WITH BUILT-IN DIODE

200V

9.5A

0.36Ohm

200V

-

FQP12N60C vs FQP10N20
FQP18N20V2

Fairchild/ON Semiconductor

-

-

-

Through Hole

TO-220-3

-

-

-

-55°C~150°C TJ

Tube

QFET®

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

123W Tc

-

-

-

-

N-Channel

-

140mOhm @ 9A, 10V

5V @ 250μA

1080pF @ 25V

18A Tc

26nC @ 10V

-

10V

±30V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

2002

-

-

-

-

-

-

-

200V

-

-

-

TO-220-3

FQP12N60C vs FQP18N20V2