Fairchild/ON Semiconductor FQP17N40

Name: FQP17N40
Brand: Fairchild/ON Semiconductor
SKU: 2482956-FQP17N40
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FQP17N40

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2482956-FQP17N40

Description:: MOSFET N-CH 400V 16A TO-220

ECAD Model:

Datasheet:: TO220B03 Pkg Drawing

Specifications

Fairchild/ON Semiconductor FQP17N40 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQP17N40.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
5 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
1.8g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
QFET®
Published
2013
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
270mOhm
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
400V
Technology
MOSFET (Metal Oxide)
Current Rating
16A
Number of Elements
1
Power Dissipation-Max
170W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
170W
Turn On Delay Time
40 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
270m Ω @ 8A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2300pF @ 25V
Current - Continuous Drain (Id) @ 25°C
16A Tc
Gate Charge (Qg) (Max) @ Vgs
60nC @ 10V
Rise Time
185ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
105 ns
Turn-Off Delay Time
90 ns
Continuous Drain Current (ID)
16A
Threshold Voltage
5V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
400V
Pulsed Drain Current-Max (IDM)
64A
Nominal Vgs
5 V
Height
9.4mm
Length
10.1mm
Width
4.7mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FQP17N40 Description

FQP17N40 N-Channel MOSFET is designed for various applications, including switched-mode power supplies, active power factor correction, and electronic lamp ballasts. FQP17N40 MOSFET is ideally suitable for reducing on-state resistance and providing superior switching performance as well as high avalanche energy strength. ON Semiconductor FQP17N40 is ideally suitable for high-voltage applications where current is not an important factor. can be used as a primary side switch for a DC-DC converter that runs off the mains.

FQP17N40 Features

16A, 400V, RDS(on) = 270mΩ(Max.) @VGS = 10 V, ID = 8A
Low gate charge ( Typ. 45nC)
Low Crss ( Typ. 30pF)
100% avalanche tested

FQP17N40 Applications

High-voltage applications
Switch
Uninterruptible Power Supply
Other Industrial
DC-DC converter

FQP17N40 More Descriptions

N-Channel Power MOSFET, QFET®, 400 V, 16 A, 270 mΩ, TO-220
Trans MOSFET N-CH 400V 16A 3-Pin(3 Tab) TO-220AB Rail - Rail/Tube
N-Channel 400 V 0.27 Ohm Through Hole Mosfet - TO-220
Power Field-Effect Transistor, 16A I(D), 400V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:400V; Current, Id Cont:16A; Resistance, Rds On:0.27ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220; Termination Type:Through Hole
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Product Comparison

The three parts on the right have similar specifications to FQP17N40.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Current Rating

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Drain to Source Voltage (Vdss)

Surface Mount

HTS Code

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Configuration

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Additional Feature

View Compare
FQP17N40

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

5 Weeks

Through Hole

Through Hole

TO-220-3

3

1.8g

SILICON

-55°C~150°C TJ

Tube

QFET®

2013

e3

yes

Active

1 (Unlimited)

3

EAR99

270mOhm

Tin (Sn)

FET General Purpose Power

400V

MOSFET (Metal Oxide)

16A

1

170W Tc

Single

ENHANCEMENT MODE

170W

40 ns

N-Channel

SWITCHING

270m Ω @ 8A, 10V

5V @ 250μA

2300pF @ 25V

16A Tc

60nC @ 10V

185ns

10V

±30V

105 ns

90 ns

16A

5V

TO-220AB

30V

400V

64A

5 V

9.4mm

10.1mm

4.7mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FQP10N20CTSTU

Fairchild/ON Semiconductor

-

-

-

Through Hole

TO-220-3

-

-

-

-55°C~150°C TJ

Tube

QFET®

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

72W Tc

-

-

-

-

N-Channel

-

360mOhm @ 4.75A, 10V

4V @ 250μA

510pF @ 25V

9.5A Tc

26nC @ 10V

-

10V

±30V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

TO-220-3

200V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FQP17N40 vs FQP10N20CTSTU
FQP10N20

Fairchild/ON Semiconductor

-

-

-

Through Hole

TO-220-3

-

-

SILICON

-55°C~150°C TJ

Tube

QFET®

2000

e3

yes

Obsolete

1 (Unlimited)

3

EAR99

-

Tin (Sn)

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

1

87W Tc

-

ENHANCEMENT MODE

-

-

N-Channel

SWITCHING

360m Ω @ 5A, 10V

5V @ 250μA

670pF @ 25V

10A Tc

18nC @ 10V

-

10V

±30V

-

-

-

-

TO-220AB

-

-

38A

-

-

-

-

-

-

-

-

-

200V

NO

8541.29.00.95

SINGLE

NOT SPECIFIED

compliant

NOT SPECIFIED

R-PSFM-T3

Not Qualified

SINGLE WITH BUILT-IN DIODE

9.5A

0.36Ohm

200V

210 mJ

-

FQP17N40 vs FQP10N20
FQP13N10L

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

4 Weeks

Through Hole

Through Hole

TO-220-3

3

1.8g

SILICON

-55°C~175°C TJ

Tube

QFET®

2013

e3

yes

Active

1 (Unlimited)

3

EAR99

180mOhm

Tin (Sn)

FET General Purpose Power

100V

MOSFET (Metal Oxide)

12.8A

1

65W Tc

Single

ENHANCEMENT MODE

65W

7.5 ns

N-Channel

SWITCHING

180m Ω @ 6.4A, 10V

2V @ 250μA

520pF @ 25V

12.8A Tc

12nC @ 5V

220ns

5V 10V

±20V

72 ns

22 ns

12.8A

2V

TO-220AB

20V

100V

-

-

9.4mm

10.1mm

4.7mm

No SVHC

-

ROHS3 Compliant

Lead Free

-

-

-

-

-

NOT SPECIFIED

-

NOT SPECIFIED

-

Not Qualified

-

-

-

-

95 mJ

FAST SWITCHING

FQP17N40 vs FQP13N10L