Fairchild/ON Semiconductor FQP13N50C
- Part Number:
- FQP13N50C
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2486229-FQP13N50C
- Description:
- MOSFET N-CH 500V 13A TO-220
- ECAD Model:
-
- Datasheet:
- TO220B03 Pkg Drawing
Fairchild/ON Semiconductor FQP13N50C technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQP13N50C.
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesQFET®
- Published2013
- JESD-609 Codee3
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationThrough Hole
- ECCN CodeEAR99
- Resistance480mOhm
- Voltage - Rated DC500V
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Current Rating13A
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Number of Elements1
- Power Dissipation-Max195W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation195W
- Turn On Delay Time25 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs480m Ω @ 6.5A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2055pF @ 25V
- Current - Continuous Drain (Id) @ 25°C13A Tc
- Gate Charge (Qg) (Max) @ Vgs56nC @ 10V
- Rise Time100ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)100 ns
- Turn-Off Delay Time130 ns
- Continuous Drain Current (ID)13A
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)30V
- Drain to Source Breakdown Voltage500V
- Pulsed Drain Current-Max (IDM)52A
- Dual Supply Voltage500V
- Avalanche Energy Rating (Eas)860 mJ
- Nominal Vgs4 V
- Height9.4mm
- Length10.1mm
- Width4.7mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FQP13N50C Description
The FQP13N50C N-Channel enhancement mode power field effect transistor is produced using ON Semiconductor's proprietary, planar stripe, DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
FQP13N50C Features
13 A, 500 V, RDS(on) = 480 mΩ (Max.) @ VGS = 10 V, ID = 6.5 A
Low Gate Charge (Typ. 43 nC)
Low Crss (Typ. 20 pF)
100% Avalanche Tested
FQP13N50C Applications
High-efficiency switched-mode power supplies
Active power factor correction
Electronic lamp ballasts based on half-bridge topology
The FQP13N50C N-Channel enhancement mode power field effect transistor is produced using ON Semiconductor's proprietary, planar stripe, DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
FQP13N50C Features
13 A, 500 V, RDS(on) = 480 mΩ (Max.) @ VGS = 10 V, ID = 6.5 A
Low Gate Charge (Typ. 43 nC)
Low Crss (Typ. 20 pF)
100% Avalanche Tested
FQP13N50C Applications
High-efficiency switched-mode power supplies
Active power factor correction
Electronic lamp ballasts based on half-bridge topology
FQP13N50C More Descriptions
Trans MOSFET N-CH 500V 13A 3-Pin(3 Tab) TO-220 Tube / MOSFET N-CH 500V 13A TO-220
FQP13N50 Series 500 V 0.43 Ohm Through Hole N-Channel Mosfet - TO-220
N-Channel QFET® MOSFET 500V, 13A, 480mΩ
Power Field-Effect Transistor, 13A I(D), 500V, 0.48ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
FQP13N50 Series 500 V 0.43 Ohm Through Hole N-Channel Mosfet - TO-220
N-Channel QFET® MOSFET 500V, 13A, 480mΩ
Power Field-Effect Transistor, 13A I(D), 500V, 0.48ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
The three parts on the right have similar specifications to FQP13N50C.
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ImagePart NumberManufacturerContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceVoltage - Rated DCTechnologyPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Number of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Dual Supply VoltageAvalanche Energy Rating (Eas)Nominal VgsHeightLengthWidthREACH SVHCRoHS StatusLead FreeSupplier Device PackageDrain to Source Voltage (Vdss)Lifecycle StatusFactory Lead TimePbfree CodeTerminal FinishQualification StatusThreshold VoltageView Compare
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FQP13N50CTinThrough HoleThrough HoleTO-220-334.535924gSILICON-55°C~150°C TJTubeQFET®2013e3Not For New Designs1 (Unlimited)3Through HoleEAR99480mOhm500VMOSFET (Metal Oxide)NOT SPECIFIED13ANOT SPECIFIED1195W TcSingleENHANCEMENT MODE195W25 nsN-ChannelSWITCHING480m Ω @ 6.5A, 10V4V @ 250μA2055pF @ 25V13A Tc56nC @ 10V100ns10V±30V100 ns130 ns13ATO-220AB30V500V52A500V860 mJ4 V9.4mm10.1mm4.7mmNo SVHCROHS3 CompliantLead Free--------- -
--Through HoleTO-220-3----55°C~150°C TJTubeQFET®--Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)----72W Tc----N-Channel-360mOhm @ 4.75A, 10V4V @ 250μA510pF @ 25V9.5A Tc26nC @ 10V-10V±30V--------------ROHS3 Compliant-TO-220-3200V------
-
--Through HoleTO-220-3----55°C~150°C TJTubeQFET®2002-Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)----123W Tc----N-Channel-140mOhm @ 9A, 10V5V @ 250μA1080pF @ 25V18A Tc26nC @ 10V-10V±30V----------------TO-220-3200V------
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-Through HoleThrough HoleTO-220-331.8gSILICON-55°C~150°C TJTubeQFET®-e3Not For New Designs1 (Unlimited)3Through HoleEAR99650mOhm600VMOSFET (Metal Oxide)NOT SPECIFIED12ANOT SPECIFIED1225W TcSingleENHANCEMENT MODE225W30 nsN-ChannelSWITCHING650m Ω @ 6A, 10V4V @ 250μA2290pF @ 25V12A Tc63nC @ 10V85ns10V±30V90 ns155 ns12ATO-220AB30V600V48A600V870 mJ4 V9.4mm10.1mm4.7mmNo SVHCROHS3 CompliantLead Free--ACTIVE, NOT REC (Last Updated: 2 days ago)6 WeeksyesTin (Sn)Not Qualified4V
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