Fairchild/ON Semiconductor FQP13N06L

Name: FQP13N06L
Brand: Fairchild/ON Semiconductor
SKU: 2482906-FQP13N06L
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FQP13N06L

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2482906-FQP13N06L

Description:: MOSFET N-CH 60V 13.6A TO-220

ECAD Model:

Datasheet:: TO220B03 Pkg Drawing

Specifications

Fairchild/ON Semiconductor FQP13N06L technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQP13N06L.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
5 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
1.8g
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
QFET®
Published
2001
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Resistance
110mOhm
Additional Feature
FAST SWITCHING
Subcategory
FET General Purpose Power
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
13.6A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
45W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
45W
Turn On Delay Time
8 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
110m Ω @ 6.8A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
350pF @ 25V
Current - Continuous Drain (Id) @ 25°C
13.6A Tc
Gate Charge (Qg) (Max) @ Vgs
6.4nC @ 5V
Rise Time
90ns
Drive Voltage (Max Rds On,Min Rds On)
5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
40 ns
Turn-Off Delay Time
20 ns
Continuous Drain Current (ID)
13.6A
Threshold Voltage
2.5V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
60V
Pulsed Drain Current-Max (IDM)
54.4A
Dual Supply Voltage
60V
Avalanche Energy Rating (Eas)
90 mJ
Nominal Vgs
2.5 V
Height
9.4mm
Length
10.1mm
Width
4.7mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FQP13N06L Description
The FQP13N06L is a QFET? N-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. The advanced MOSFET technology FQP13N06L has been specially tailored to reduce ON-state resistance, and provide superior switching performance and high avalanche energy strength. It is suitable for switched-mode power supplies, audio amplifiers, and variable switching power applications.

FQP13N06L Features
13.6A, 60V, RDS(on) = 110mΩ(Max.) @VGS = 10 V, ID = 6.8A
Low gate charge ( Typ. 4.8nC)
Low Crss ( Typ. 17pF)
100% avalanche tested
175°C maximum junction temperature rating

FQP13N06L Applications
Switched-mode power supplies
Audio amplifier
DC motor control
Variable switching power applications..
Other Industrial

FQP13N06L More Descriptions

N-Channel Power MOSFET, Logic Level, QFET®, 60 V, 13.6 A, 110 mΩ, TO-220
N-Channel 60 V 0.11 Ohm Through Hole Logic Mosfet - TO-220
Trans MOSFET N-CH 60V 13.6A 3-Pin(3 Tab) TO-220AB Rail - Rail/Tube
MOSFET, N CH, 60V, 13.6A, TO-220AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:13.6A; Source Voltage Vds:60V; On Resistance
Power Field-Effect Transistor, 13.6A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications..
MOSFET, N, 60V, 13.6A; Transistor Polarity: N Channel; Continuous Drain Current Id: 13.6A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.11ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 45W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C; Termination Type: Through Hole; Transistor Type: Enhancement; Voltage Vds Typ: 60V; Voltage Vgs Rds on Measurement: 10V

Product Comparison

The three parts on the right have similar specifications to FQP13N06L.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Dual Supply Voltage

Avalanche Energy Rating (Eas)

Nominal Vgs

Height

Length

Width

REACH SVHC

RoHS Status

Lead Free

Surface Mount

Terminal Finish

Terminal Position

Reach Compliance Code

Pin Count

JESD-30 Code

Configuration

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Supplier Device Package

View Compare
FQP13N06L

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

5 Weeks

Tin

Through Hole

Through Hole

TO-220-3

3

1.8g

SILICON

-55°C~175°C TJ

Tube

QFET®

2001

e3

yes

Active

1 (Unlimited)

3

Through Hole

EAR99

110mOhm

FAST SWITCHING

FET General Purpose Power

60V

MOSFET (Metal Oxide)

NOT SPECIFIED

13.6A

NOT SPECIFIED

Not Qualified

1

45W Tc

Single

ENHANCEMENT MODE

45W

8 ns

N-Channel

SWITCHING

110m Ω @ 6.8A, 10V

2.5V @ 250μA

350pF @ 25V

13.6A Tc

6.4nC @ 5V

90ns

5V 10V

±20V

40 ns

20 ns

13.6A

2.5V

TO-220AB

20V

60V

54.4A

60V

90 mJ

2.5 V

9.4mm

10.1mm

4.7mm

No SVHC

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-
FQP13N06

Fairchild/ON Semiconductor

-

-

-

-

Through Hole

TO-220-3

-

-

SILICON

-55°C~175°C TJ

Tube

QFET®

-

e3

yes

Obsolete

1 (Unlimited)

3

-

-

-

FAST SWITCHING

-

-

MOSFET (Metal Oxide)

NOT APPLICABLE

-

NOT APPLICABLE

COMMERCIAL

1

45W Tc

-

ENHANCEMENT MODE

-

-

N-Channel

SWITCHING

135m Ω @ 6.5A, 10V

4V @ 250μA

310pF @ 25V

13A Tc

7.5nC @ 10V

-

10V

±25V

-

-

-

-

TO-220AB

-

-

52A

-

85 mJ

-

-

-

-

-

ROHS3 Compliant

-

NO

MATTE TIN

SINGLE

unknown

3

R-PSFM-T3

SINGLE WITH BUILT-IN DIODE

60V

13A

0.135Ohm

60V

-

FQP13N06L vs FQP13N06
FQP1N50

Fairchild/ON Semiconductor

-

-

-

-

Through Hole

TO-220-3

-

-

-

-55°C~150°C TJ

Tube

QFET®

2000

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

40W Tc

-

-

-

-

N-Channel

-

9Ohm @ 700mA, 10V

5V @ 250μA

150pF @ 25V

1.4A Tc

5.5nC @ 10V

-

10V

±30V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

500V

-

-

-

TO-220-3

FQP13N06L vs FQP1N50
FQP16N25

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

5 Weeks

-

Through Hole

Through Hole

TO-220-3

3

1.8g

SILICON

-55°C~150°C TJ

Tube

QFET®

2013

e3

yes

Active

1 (Unlimited)

3

-

EAR99

-

-

FET General Purpose Power

250V

MOSFET (Metal Oxide)

NOT SPECIFIED

16A

NOT SPECIFIED

Not Qualified

1

142W Tc

Single

ENHANCEMENT MODE

50W

17 ns

N-Channel

SWITCHING

230m Ω @ 8A, 10V

5V @ 250μA

1200pF @ 25V

16A Tc

35nC @ 10V

140ns

10V

±30V

75 ns

45 ns

16A

-

TO-220AB

30V

250V

64A

-

560 mJ

-

16.3mm

10.67mm

4.7mm

-

ROHS3 Compliant

Lead Free

-

Tin (Sn)

-

-

-

-

-

-

-

-

-

-

FQP13N06L vs FQP16N25

Certification

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FQP13N06L Specification

Part Number	Manufacturers	Description	Stock	Price
FQP13N06L DISTI #V99:2348_06301273	ON Semiconductor	QF 60V 110MOHM L TO220	2385	1 $1.0101 10 $0.9028 100 $0.625 500 $0.5657 1000 $0.4225 2000 $0.3773 10000 $0.3689 25000 $0.3613
FQP13N06L DISTI #V36:1790_06301273	ON Semiconductor	QF 60V 110MOHM L TO220	203	1 $1.0101 10 $0.9028 100 $0.625 500 $0.5657 1000 $0.4225 2000 $0.3773 10000 $0.3689 25000 $0.3613
FQP13N06L DISTI #FQP13N06L-ND	ON Semiconductor	MOSFET N-CH 60V 13.6A TO-220 RoHS: Compliant	2594	1 $0.93 10 $0.834 25 $0.7912 100 $0.6499 1000 $0.42383 3000 $0.39558 5000 $0.3758
FQP13N06L DISTI #32139789	ON Semiconductor	QF 60V 110MOHM L TO220	4872	42 $0.2413
FQP13N06L DISTI #28970924	ON Semiconductor	QF 60V 110MOHM L TO220	2385	19 $1.0101
FQP13N06L DISTI #31010153	ON Semiconductor	QF 60V 110MOHM L TO220	203	22 $1.0101
FQP13N06L DISTI #FQP13N06L	ON Semiconductor	Trans MOSFET N-CH 60V 13.6A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	282	1 $0.5079 10 $0.4519 25 $0.4069 50 $0.3699 100 $0.3389 500 $0.3129 1000 $0.2899
FQP13N06L DISTI #FQP13N06L	ON Semiconductor	Trans MOSFET N-CH 60V 13.6A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	1640	50 $0.32055 100 $0.312 150 $0.3039 250 $0.2962 500 $0.28889
FQP13N06L DISTI #FQP13N06L	ON Semiconductor	Trans MOSFET N-CH 60V 13.6A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	0	834 $0.3919 1668 $0.3889 2502 $0.3839 4170 $0.3789 8340 $0.3699
FQP13N06L DISTI #FQP13N06L	ON Semiconductor	Trans MOSFET N-CH 60V 13.6A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	0	2000 $0.468 4000 $0.45 6000 $0.43333 10000 $0.41786 20000 $0.40345 50000 $0.39 100000 $0.38361
FQP13N06L DISTI #34C0482	ON Semiconductor	TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,13.6A I(D	0	1 $1.23 10 $0.957 100 $0.673 1000 $0.464 2000 $0.449 10000 $0.428 24000 $0.413 50000 $0.401
FQP13N06L. DISTI #27AC5835	Fairchild Semiconductor Corporation	QF 60V 110MOHM L TO220 ROHS COMPLIANT: YES	1640	1 $0.306 100 $0.304 150 $0.3 250 $0.297 500 $0.289
FQP13N06L DISTI #512-FQP13N06L	ON Semiconductor	MOSFET 60V N-Channel QFET Logic Level RoHS: Compliant	1967	1 $0.99 10 $0.838 100 $0.643 500 $0.569 1000 $0.449
FQP13N06L DISTI #	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 13.6A I(D), 60V, 0. RoHS: Compliant	128344	1 $0.42 25 $0.39 100 $0.38 500 $0.36 1000 $0.34
FQP13N06L DISTI #	Fairchild Semiconductor Corporation		426
FQP13N06L DISTI #	Fairchild Semiconductor Corporation		150
FQP13N06L DISTI #6715014	ON Semiconductor	MOSFET N-CHANNEL 60V 13.6A TO220AB, PK	1175	5 $0.558 25 $0.514 100 $0.504 250 $0.494 500 $0.454
FQP13N06L DISTI #FQP13N06L	ON Semiconductor	Transistor: N-MOSFET, unipolar, 60V, 9.6A, 45W	264	1 $0.6419 5 $0.4403 25 $0.357 100 $0.321 500 $0.2973
FQP13N06L DISTI #	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 13.6A I(D), 60V, 0. RoHS: Not Compliant	200
FQP13N06L DISTI #2453437	ON Semiconductor	MOSFET, N CH, 60V, 13.6A, TO-220AB-3 RoHS: Compliant	999	1 $1.52 10 $1.29 100 $0.989 500 $0.875 1000 $0.691
FQP13N06L DISTI #2453437	ON Semiconductor	MOSFET, N CH, 60V, 13.6A, TO-220AB-3	999	1 $0.88 10 $0.709 100 $0.501 250 $0.472 500 $0.443

FQP13N0~~(4)~~
FQP13N~~(15)~~
FQP13~~(15)~~
FQP1~~(85)~~
FQP~~(96)~~

Fairchild/ON Semiconductor FQP13N06L

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