Fairchild/ON Semiconductor FQI12N60CTU
- Part Number:
- FQI12N60CTU
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3586681-FQI12N60CTU
- Description:
- MOSFET N-CH 600V 12A I2PAK
- Datasheet:
- FQB12N60C, FQI12N60C
Fairchild/ON Semiconductor FQI12N60CTU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQI12N60CTU.
- Mounting TypeThrough Hole
- Package / CaseTO-262-3 Long Leads, I2Pak, TO-262AA
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesQFET®
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Reach Compliance Codeunknown
- Pin Count3
- JESD-30 CodeR-PSIP-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max3.13W Ta 225W Tc
- Operating ModeENHANCEMENT MODE
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs650m Ω @ 6A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2.29pF @ 25V
- Current - Continuous Drain (Id) @ 25°C12A Tc
- Gate Charge (Qg) (Max) @ Vgs63nC @ 10V
- Drain to Source Voltage (Vdss)600V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Drain Current-Max (Abs) (ID)12A
- Drain-source On Resistance-Max0.65Ohm
- Pulsed Drain Current-Max (IDM)48A
- DS Breakdown Voltage-Min600V
- Avalanche Energy Rating (Eas)870 mJ
- RoHS StatusROHS3 Compliant
FQI12N60CTU Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 870 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2.29pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 12A.There is a peak drain current of 48A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 600V, it should remain above the 600V level.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
FQI12N60CTU Features
the avalanche energy rating (Eas) is 870 mJ
based on its rated peak drain current 48A.
a 600V drain to source voltage (Vdss)
FQI12N60CTU Applications
There are a lot of Rochester Electronics, LLC
FQI12N60CTU applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 870 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2.29pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 12A.There is a peak drain current of 48A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 600V, it should remain above the 600V level.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
FQI12N60CTU Features
the avalanche energy rating (Eas) is 870 mJ
based on its rated peak drain current 48A.
a 600V drain to source voltage (Vdss)
FQI12N60CTU Applications
There are a lot of Rochester Electronics, LLC
FQI12N60CTU applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
FQI12N60CTU More Descriptions
Trans MOSFET N-CH 600V 12A 3-Pin(3 Tab) I2PAK Rail
MOSFETs 600V N-Channel Adv Q-FET C-Series
N-CHANNEL POWER MOSFET
OEMs, CMs ONLY (NO BROKERS)
N-CH/600V/12A/QFET C-SERIES
MISCELLANEOUS MOSFETS;
MOSFETs 600V N-Channel Adv Q-FET C-Series
N-CHANNEL POWER MOSFET
OEMs, CMs ONLY (NO BROKERS)
N-CH/600V/12A/QFET C-SERIES
MISCELLANEOUS MOSFETS;
The three parts on the right have similar specifications to FQI12N60CTU.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTechnologyTerminal PositionReach Compliance CodePin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusPbfree CodeTerminal FinishPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-609 CodeView Compare
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FQI12N60CTUThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AANOSILICON-55°C~150°C TJTubeQFET®Obsolete1 (Unlimited)3MOSFET (Metal Oxide)SINGLEunknown3R-PSIP-T3COMMERCIAL1SINGLE WITH BUILT-IN DIODE3.13W Ta 225W TcENHANCEMENT MODEN-ChannelSWITCHING650m Ω @ 6A, 10V4V @ 250μA2.29pF @ 25V12A Tc63nC @ 10V600V10V±30V12A0.65Ohm48A600V870 mJROHS3 Compliant------
-
Through HoleTO-262-3 Long Leads, I2Pak, TO-262AANOSILICON-55°C~175°C TJTubeQFET®Obsolete1 (Unlimited)3MOSFET (Metal Oxide)SINGLEunknown3R-PSIP-T3COMMERCIAL1SINGLE WITH BUILT-IN DIODE3.75W Ta 45W TcENHANCEMENT MODEN-ChannelSWITCHING110m Ω @ 6.8A, 10V2.5V @ 250μA350pF @ 25V13.6A Tc6.4nC @ 5V60V5V 10V±20V13.6A0.14Ohm54.4A60V90 mJROHS3 CompliantyesNOT SPECIFIEDNOT SPECIFIEDNOT SPECIFIED-
-
Through HoleTO-262-3 Long Leads, I2Pak, TO-262AANOSILICON-55°C~150°C TJTubeQFET®Obsolete1 (Unlimited)3MOSFET (Metal Oxide)SINGLEunknown3R-PSIP-T3COMMERCIAL1SINGLE WITH BUILT-IN DIODE3.13W Ta 156W TcENHANCEMENT MODEN-ChannelSWITCHING730m Ω @ 4.75A, 10V4V @ 250μA2.04pF @ 25V9.5A Tc57nC @ 10V600V10V±30V9.5A0.73Ohm38A600V700 mJROHS3 CompliantyesMATTE TINNOT APPLICABLENOT APPLICABLEe3
-
Through HoleTO-262-3 Long Leads, I2Pak, TO-262AANOSILICON-55°C~150°C TJTubeQFET®Obsolete1 (Unlimited)3MOSFET (Metal Oxide)SINGLEunknown3R-PSIP-T3COMMERCIAL1SINGLE WITH BUILT-IN DIODE3.13W Ta 140W TcENHANCEMENT MODEN-ChannelSWITCHING150m Ω @ 9.7A, 10V5V @ 250μA1.6pF @ 25V19.4A Tc40nC @ 10V200V10V±30V19.4A0.15Ohm78A200V250 mJROHS3 CompliantyesMATTE TINNOT APPLICABLENOT APPLICABLEe3
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