FQI12N60CTU

Fairchild/ON Semiconductor FQI12N60CTU

Part Number:
FQI12N60CTU
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
3586681-FQI12N60CTU
Description:
MOSFET N-CH 600V 12A I2PAK
ECAD Model:
Datasheet:
FQB12N60C, FQI12N60C

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Specifications
Fairchild/ON Semiconductor FQI12N60CTU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQI12N60CTU.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-262-3 Long Leads, I2Pak, TO-262AA
  • Surface Mount
    NO
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    QFET®
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Reach Compliance Code
    unknown
  • Pin Count
    3
  • JESD-30 Code
    R-PSIP-T3
  • Qualification Status
    COMMERCIAL
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    3.13W Ta 225W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    650m Ω @ 6A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2.29pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    12A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    63nC @ 10V
  • Drain to Source Voltage (Vdss)
    600V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Drain Current-Max (Abs) (ID)
    12A
  • Drain-source On Resistance-Max
    0.65Ohm
  • Pulsed Drain Current-Max (IDM)
    48A
  • DS Breakdown Voltage-Min
    600V
  • Avalanche Energy Rating (Eas)
    870 mJ
  • RoHS Status
    ROHS3 Compliant
Description
FQI12N60CTU Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 870 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2.29pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 12A.There is a peak drain current of 48A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 600V, it should remain above the 600V level.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

FQI12N60CTU Features
the avalanche energy rating (Eas) is 870 mJ
based on its rated peak drain current 48A.
a 600V drain to source voltage (Vdss)


FQI12N60CTU Applications
There are a lot of Rochester Electronics, LLC
FQI12N60CTU applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
FQI12N60CTU More Descriptions
Trans MOSFET N-CH 600V 12A 3-Pin(3 Tab) I2PAK Rail
MOSFETs 600V N-Channel Adv Q-FET C-Series
N-CHANNEL POWER MOSFET
OEMs, CMs ONLY (NO BROKERS)
N-CH/600V/12A/QFET C-SERIES
MISCELLANEOUS MOSFETS;
Product Comparison
The three parts on the right have similar specifications to FQI12N60CTU.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Technology
    Terminal Position
    Reach Compliance Code
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    RoHS Status
    Pbfree Code
    Terminal Finish
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-609 Code
    View Compare
  • FQI12N60CTU
    FQI12N60CTU
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    NO
    SILICON
    -55°C~150°C TJ
    Tube
    QFET®
    Obsolete
    1 (Unlimited)
    3
    MOSFET (Metal Oxide)
    SINGLE
    unknown
    3
    R-PSIP-T3
    COMMERCIAL
    1
    SINGLE WITH BUILT-IN DIODE
    3.13W Ta 225W Tc
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    650m Ω @ 6A, 10V
    4V @ 250μA
    2.29pF @ 25V
    12A Tc
    63nC @ 10V
    600V
    10V
    ±30V
    12A
    0.65Ohm
    48A
    600V
    870 mJ
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
  • FQI13N06LTU
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    NO
    SILICON
    -55°C~175°C TJ
    Tube
    QFET®
    Obsolete
    1 (Unlimited)
    3
    MOSFET (Metal Oxide)
    SINGLE
    unknown
    3
    R-PSIP-T3
    COMMERCIAL
    1
    SINGLE WITH BUILT-IN DIODE
    3.75W Ta 45W Tc
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    110m Ω @ 6.8A, 10V
    2.5V @ 250μA
    350pF @ 25V
    13.6A Tc
    6.4nC @ 5V
    60V
    5V 10V
    ±20V
    13.6A
    0.14Ohm
    54.4A
    60V
    90 mJ
    ROHS3 Compliant
    yes
    NOT SPECIFIED
    NOT SPECIFIED
    NOT SPECIFIED
    -
  • FQI10N60CTU
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    NO
    SILICON
    -55°C~150°C TJ
    Tube
    QFET®
    Obsolete
    1 (Unlimited)
    3
    MOSFET (Metal Oxide)
    SINGLE
    unknown
    3
    R-PSIP-T3
    COMMERCIAL
    1
    SINGLE WITH BUILT-IN DIODE
    3.13W Ta 156W Tc
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    730m Ω @ 4.75A, 10V
    4V @ 250μA
    2.04pF @ 25V
    9.5A Tc
    57nC @ 10V
    600V
    10V
    ±30V
    9.5A
    0.73Ohm
    38A
    600V
    700 mJ
    ROHS3 Compliant
    yes
    MATTE TIN
    NOT APPLICABLE
    NOT APPLICABLE
    e3
  • FQI19N20TU
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    NO
    SILICON
    -55°C~150°C TJ
    Tube
    QFET®
    Obsolete
    1 (Unlimited)
    3
    MOSFET (Metal Oxide)
    SINGLE
    unknown
    3
    R-PSIP-T3
    COMMERCIAL
    1
    SINGLE WITH BUILT-IN DIODE
    3.13W Ta 140W Tc
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    150m Ω @ 9.7A, 10V
    5V @ 250μA
    1.6pF @ 25V
    19.4A Tc
    40nC @ 10V
    200V
    10V
    ±30V
    19.4A
    0.15Ohm
    78A
    200V
    250 mJ
    ROHS3 Compliant
    yes
    MATTE TIN
    NOT APPLICABLE
    NOT APPLICABLE
    e3
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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