Fairchild/ON Semiconductor FQD7P06TM
- Part Number:
- FQD7P06TM
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2483441-FQD7P06TM
- Description:
- MOSFET P-CH 60V 5.4A DPAK
- Datasheet:
- FQD7P06TM
Fairchild/ON Semiconductor FQD7P06TM technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQD7P06TM.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time4 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Weight260.37mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesQFET®
- Published2001
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Resistance450mOhm
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-60V
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Current Rating-5.4A
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Power Dissipation-Max2.5W Ta 28W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.5W
- Case ConnectionDRAIN
- Turn On Delay Time7 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs451m Ω @ 2.7A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds295pF @ 25V
- Current - Continuous Drain (Id) @ 25°C5.4A Tc
- Gate Charge (Qg) (Max) @ Vgs8.2nC @ 10V
- Rise Time50ns
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±25V
- Fall Time (Typ)25 ns
- Turn-Off Delay Time7.5 ns
- Continuous Drain Current (ID)5.4A
- Gate to Source Voltage (Vgs)25V
- Drain to Source Breakdown Voltage-60V
- Avalanche Energy Rating (Eas)90 mJ
- Height2.39mm
- Length6.73mm
- Width6.22mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FQD7P06TM Description
FQD7P06TM belongs to the family of P-channel QFET? MOSFETs that are designed to minimize on-state resistance, offer advanced switching performance, and withstand high energy pulse based on planar stripe and DMOS technology provided by ON Semiconductor. Due to its high quality and reliable performance, FQD7P06TM is well suited for DC motor control, switched-mode power supplies, audio amplifier, and so on.
FQD7P06TM Features
Planar stripe and DMOS technology
Advanced switching performance
Low on-state resistance
Low gate charge
Available in the D-PAK package
FQD7P06TM Applications
DC motor control
Audio amplifier
Switched-mode power supplies
Variable switching power applications
FQD7P06TM belongs to the family of P-channel QFET? MOSFETs that are designed to minimize on-state resistance, offer advanced switching performance, and withstand high energy pulse based on planar stripe and DMOS technology provided by ON Semiconductor. Due to its high quality and reliable performance, FQD7P06TM is well suited for DC motor control, switched-mode power supplies, audio amplifier, and so on.
FQD7P06TM Features
Planar stripe and DMOS technology
Advanced switching performance
Low on-state resistance
Low gate charge
Available in the D-PAK package
FQD7P06TM Applications
DC motor control
Audio amplifier
Switched-mode power supplies
Variable switching power applications
FQD7P06TM More Descriptions
P-Channel Power MOSFET, QFET®, -60 V, -5.4 A, 450 mΩ, DPAK
Power Field-Effect Transistor, 5.4A I(D), 60V, 0.451ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, P-CH, -60V, -5.4A, TO-252-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -5.4A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.36ohm; Rds(on) Test Volt; Available until stocks are exhausted
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Power Field-Effect Transistor, 5.4A I(D), 60V, 0.451ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, P-CH, -60V, -5.4A, TO-252-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -5.4A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.36ohm; Rds(on) Test Volt; Available until stocks are exhausted
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
The three parts on the right have similar specifications to FQD7P06TM.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyTerminal FormCurrent RatingJESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageAvalanche Energy Rating (Eas)HeightLengthWidthRadiation HardeningRoHS StatusLead FreeSupplier Device PackageView Compare
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FQD7P06TMACTIVE (Last Updated: 2 days ago)4 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633260.37mgSILICON-55°C~150°C TJTape & Reel (TR)QFET®2001e3yesActive1 (Unlimited)2EAR99450mOhmTin (Sn)Other Transistors-60VMOSFET (Metal Oxide)GULL WING-5.4AR-PSSO-G212.5W Ta 28W TcSingleENHANCEMENT MODE2.5WDRAIN7 nsP-ChannelSWITCHING451m Ω @ 2.7A, 10V4V @ 250μA295pF @ 25V5.4A Tc8.2nC @ 10V50ns60V10V±25V25 ns7.5 ns5.4A25V-60V90 mJ2.39mm6.73mm6.22mmNoROHS3 CompliantLead Free--
-
---Surface MountTO-252-3, DPak (2 Leads Tab), SC-63----55°C~150°C TJTape & Reel (TR)QFET®2000--Obsolete1 (Unlimited)------MOSFET (Metal Oxide)----2.5W Ta 45W Tc-----N-Channel-690mOhm @ 2.65A, 10V5V @ 250μA400pF @ 25V5.3A Tc10nC @ 10V-200V10V±30V------------D-Pak
-
--Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63-260.37mg--55°C~150°C TJTape & Reel (TR)QFET®2000--Obsolete1 (Unlimited)-----200VMOSFET (Metal Oxide)-5.5A-12.5W Ta 45W TcSingle-2.5W--N-Channel-750m Ω @ 2.75A, 10V2V @ 250μA500pF @ 25V5.5A Tc9nC @ 5V125ns-5V 10V±20V65 ns20 ns5.5A20V200V-----RoHS CompliantLead Free-
-
---Surface MountTO-252-3, DPak (2 Leads Tab), SC-63----55°C~150°C TJTape & Reel (TR)QFET®2000--Obsolete1 (Unlimited)------MOSFET (Metal Oxide)----2.5W Ta 45W Tc-----N-Channel-690mOhm @ 2.65A, 10V5V @ 250μA400pF @ 25V5.3A Tc10nC @ 10V-200V10V±30V------------D-Pak
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