FQD7P06TM

Fairchild/ON Semiconductor FQD7P06TM

Part Number:
FQD7P06TM
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2483441-FQD7P06TM
Description:
MOSFET P-CH 60V 5.4A DPAK
ECAD Model:
Datasheet:
FQD7P06TM

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Specifications
Fairchild/ON Semiconductor FQD7P06TM technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQD7P06TM.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    4 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Weight
    260.37mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    QFET®
  • Published
    2001
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Resistance
    450mOhm
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -60V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Current Rating
    -5.4A
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    2.5W Ta 28W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.5W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    7 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    451m Ω @ 2.7A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    295pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    5.4A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    8.2nC @ 10V
  • Rise Time
    50ns
  • Drain to Source Voltage (Vdss)
    60V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±25V
  • Fall Time (Typ)
    25 ns
  • Turn-Off Delay Time
    7.5 ns
  • Continuous Drain Current (ID)
    5.4A
  • Gate to Source Voltage (Vgs)
    25V
  • Drain to Source Breakdown Voltage
    -60V
  • Avalanche Energy Rating (Eas)
    90 mJ
  • Height
    2.39mm
  • Length
    6.73mm
  • Width
    6.22mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FQD7P06TM Description
FQD7P06TM belongs to the family of P-channel QFET? MOSFETs that are designed to minimize on-state resistance, offer advanced switching performance, and withstand high energy pulse based on planar stripe and DMOS technology provided by ON Semiconductor. Due to its high quality and reliable performance, FQD7P06TM is well suited for DC motor control, switched-mode power supplies, audio amplifier, and so on.

FQD7P06TM Features
Planar stripe and DMOS technology
Advanced switching performance
Low on-state resistance
Low gate charge
Available in the D-PAK package

FQD7P06TM Applications
DC motor control
Audio amplifier
Switched-mode power supplies
Variable switching power applications
FQD7P06TM More Descriptions
P-Channel Power MOSFET, QFET®, -60 V, -5.4 A, 450 mΩ, DPAK
Power Field-Effect Transistor, 5.4A I(D), 60V, 0.451ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, P-CH, -60V, -5.4A, TO-252-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -5.4A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.36ohm; Rds(on) Test Volt; Available until stocks are exhausted
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Product Comparison
The three parts on the right have similar specifications to FQD7P06TM.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Form
    Current Rating
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Avalanche Energy Rating (Eas)
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    View Compare
  • FQD7P06TM
    FQD7P06TM
    ACTIVE (Last Updated: 2 days ago)
    4 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    260.37mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    QFET®
    2001
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    450mOhm
    Tin (Sn)
    Other Transistors
    -60V
    MOSFET (Metal Oxide)
    GULL WING
    -5.4A
    R-PSSO-G2
    1
    2.5W Ta 28W Tc
    Single
    ENHANCEMENT MODE
    2.5W
    DRAIN
    7 ns
    P-Channel
    SWITCHING
    451m Ω @ 2.7A, 10V
    4V @ 250μA
    295pF @ 25V
    5.4A Tc
    8.2nC @ 10V
    50ns
    60V
    10V
    ±25V
    25 ns
    7.5 ns
    5.4A
    25V
    -60V
    90 mJ
    2.39mm
    6.73mm
    6.22mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
  • FQD7N20TM_F080
    -
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    QFET®
    2000
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    2.5W Ta 45W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    690mOhm @ 2.65A, 10V
    5V @ 250μA
    400pF @ 25V
    5.3A Tc
    10nC @ 10V
    -
    200V
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    D-Pak
  • FQD7N20LTF
    -
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    260.37mg
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    QFET®
    2000
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    200V
    MOSFET (Metal Oxide)
    -
    5.5A
    -
    1
    2.5W Ta 45W Tc
    Single
    -
    2.5W
    -
    -
    N-Channel
    -
    750m Ω @ 2.75A, 10V
    2V @ 250μA
    500pF @ 25V
    5.5A Tc
    9nC @ 5V
    125ns
    -
    5V 10V
    ±20V
    65 ns
    20 ns
    5.5A
    20V
    200V
    -
    -
    -
    -
    -
    RoHS Compliant
    Lead Free
    -
  • FQD7N20TF
    -
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    QFET®
    2000
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    2.5W Ta 45W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    690mOhm @ 2.65A, 10V
    5V @ 250μA
    400pF @ 25V
    5.3A Tc
    10nC @ 10V
    -
    200V
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    D-Pak
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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