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FQD7N10LTM

Fairchild/ON Semiconductor FQD7N10LTM

Part Number:
FQD7N10LTM
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
3813659-FQD7N10LTM
Description:
MOSFET N-CH 100V 5.8A DPAK
ECAD Model:
Datasheet:
FQD7N10LTM

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Specifications
Fairchild/ON Semiconductor FQD7N10LTM technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQD7N10LTM.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    4 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Weight
    260.37mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    QFET®
  • Published
    2000
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Resistance
    350mOhm
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    100V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Current Rating
    5.8A
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    2.5W Ta 25W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.5W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    9 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    350m Ω @ 2.9A, 10V
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    290pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    5.8A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    6nC @ 5V
  • Rise Time
    100ns
  • Drive Voltage (Max Rds On,Min Rds On)
    5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    50 ns
  • Turn-Off Delay Time
    17 ns
  • Continuous Drain Current (ID)
    5.8A
  • Threshold Voltage
    2V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    100V
  • Avalanche Energy Rating (Eas)
    50 mJ
  • Height
    2.3mm
  • Length
    6.6mm
  • Width
    6.1mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FQD7N10LTM Description A patented planar stripe and DMOS technology is used to make the FQD7N10LTM N-Channel enhancement mode power MOSFET. This sophisticated MOSFET technology was specifically designed to reduce on-state resistance, give improved switching performance, and have a high avalanche energy strength. Switched-mode power supply, audio amplifiers, DC motor control, and variable switching power applications are all good candidates for FQD7N10LTM MOSFETs.
FQD7N10LTM Features Low Crss ( Typ. 12pF)
100% avalanche tested
5.8A, 100V, RDS(on) = 350mΩ(Max.) @VGS = 10 V, ID = 2.9A
Low gate charge ( Typ. 4.6nC)
FQD7N10LTM Applications LED TV
Lighting
Automotive electronics
Consumer electronics
Power supplies
DC-to-DC converters
Motor controllers
Radio-frequency (RF)
FQD7N10LTM More Descriptions
N-Channel Power MOSFET, Logic Level, QFET®, 100 V, 5.8 A, 350 mΩ, DPAK
N-Channel 100 V 0.35 Ohm Surface Mount LOGIC Mosfet - TO-252-3
Power Field-Effect Transistor, 5.8A I(D), 100V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, N CH, 100V, 5.8A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.8A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.27; Available until stocks are exhausted Alternative available
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Product Comparison
The three parts on the right have similar specifications to FQD7N10LTM.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Form
    Current Rating
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Avalanche Energy Rating (Eas)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Drain to Source Voltage (Vdss)
    View Compare
  • FQD7N10LTM
    FQD7N10LTM
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 2 days ago)
    4 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    260.37mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    QFET®
    2000
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    350mOhm
    FET General Purpose Power
    100V
    MOSFET (Metal Oxide)
    GULL WING
    5.8A
    R-PSSO-G2
    1
    2.5W Ta 25W Tc
    Single
    ENHANCEMENT MODE
    2.5W
    DRAIN
    9 ns
    N-Channel
    SWITCHING
    350m Ω @ 2.9A, 10V
    2V @ 250μA
    290pF @ 25V
    5.8A Tc
    6nC @ 5V
    100ns
    5V 10V
    ±20V
    50 ns
    17 ns
    5.8A
    2V
    20V
    100V
    50 mJ
    2.3mm
    6.6mm
    6.1mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
  • FQD7N20LTF
    FQD7N20LTF
    Fairchild/ON Semiconductor
    -
    -
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    260.37mg
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    QFET®
    2000
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    200V
    MOSFET (Metal Oxide)
    -
    5.5A
    -
    1
    2.5W Ta 45W Tc
    Single
    -
    2.5W
    -
    -
    N-Channel
    -
    750m Ω @ 2.75A, 10V
    2V @ 250μA
    500pF @ 25V
    5.5A Tc
    9nC @ 5V
    125ns
    5V 10V
    ±20V
    65 ns
    20 ns
    5.5A
    -
    20V
    200V
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    Lead Free
    -
    -
    FQD7N10LTM vs FQD7N20LTF
  • FQD7N30TF
    FQD7N30TF
    Fairchild/ON Semiconductor
    -
    -
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    QFET®
    2016
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    2.5W Ta 50W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    700mOhm @ 2.75A, 10V
    5V @ 250μA
    610pF @ 25V
    5.5A Tc
    17nC @ 10V
    -
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    D-Pak
    300V
    FQD7N10LTM vs FQD7N30TF
  • FQD7N20TF
    FQD7N20TF
    Fairchild/ON Semiconductor
    -
    -
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    QFET®
    2000
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    2.5W Ta 45W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    690mOhm @ 2.65A, 10V
    5V @ 250μA
    400pF @ 25V
    5.3A Tc
    10nC @ 10V
    -
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    D-Pak
    200V
    FQD7N10LTM vs FQD7N20TF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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